NTNS3164NZT5G

NTNS3164NZ MOSFET – Single, N-Channel, Small Signal, SOT-883 (XDFN3), 1.0 x 0.6 x 0.4 mm http://onsemi.com 20 V, 361 Ma V(BR)DSS Features RDS(on) MAX • Single N−Channel MOSFET • Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for • • • 0.7 W @ 4.5 V Extremely Thin Environments Such as Portable Electronics Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm Package 1.5 V Gate Drive These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1.0 W @ 2.5 V 20 V 361 mA 2.0 W @ 1.8 V 4.0 W @ 1.5 V N−CHANNEL MOSFET Applications • • • • ID Max High Side Switch High Speed Interfacing Level Shift and Translate Optimized for Power Management in Ultra Portable Solutions D (3) G (1) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±8 V ID 361 mA Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C 260 t≤5s TA = 25°C 427 Steady State TA = 25°C PD t≤5s Pulsed Drain Current mW 155 S (2) MARKING DIAGRAM 3 217 2 1 64 M IDM 1082 mA SOT−883 (XDFN3) CASE 506CB TJ, TSTG −55 to 150 °C 64 M Source Current (Body Diode) (Note 2) IS 129 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C tp = 10 ms Operating Junction and Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% © Semiconductor Components Industries, LLC, 2013 June, 2019 − Rev. 0 1 = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping† NTNS3164NZT5G SOT−883 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTNS3164NZ/D NTNS3164NZ THERMAL RESISTANCE RATINGS Symbol Max Junction−to−Ambient – Steady State (Note 3) Parameter RθJA 806 Junction−to−Ambient – t ≤ 5 s (Note 3) RθJA 575 Unit °C/W 3. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min 20 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 20 V Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±5 V VGS(TH) VGS = VDS, ID = 250 mA V 23 TJ = 25°C mV/°C 1 mA ±10 mA 1.0 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ 0.4 1.8 RDS(on) mV/°C VGS = 4.5 V, ID = 200 mA 0.5 0.7 VGS = 2.5 V, ID = 100 mA 0.7 1.0 VGS = 1.8 V, ID = 50 mA 1.0 2.0 VGS= 1.5 V, ID = 10 mA 1.2 4.0 Forward Transconductance gFS VDS = 5 V, ID = 200 mA 1.26 Source−Drain Diode Voltage VSD VGS = 0 V, IS = 100 mA 0.75 W S 1.2 V CHARGES & CAPACITANCES Input Capacitance CISS 24 Output Capacitance COSS Reverse Transfer Capacitance CRSS 3.4 Total Gate Charge QG(TOT) 0.8 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 0 V, freq = 1 MHz, VDS = 10 V VGS = 4.5 V, VDS = 10 V; ID = 200 mA 5.0 0.1 0.2 pF nC 0.1 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 10 VGS = 4.5 V, VDD = 10 V, ID = 200 mA, RG = 2 W tf 11 67 31 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 ns NTNS3164NZ TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 0.9 0.8 0.7 4.5 V 1.0 2.5 V 4.0 V 3.0 V 3.5 V 1.8 V 0.6 0.5 0.4 1.5 V 0.3 0.2 0.1 0 1.2 V 0 0.5 1.0 1.5 2.0 2.5 0.8 TJ = −55°C 0.6 0.5 0.4 0.3 0.2 0.1 0 3.0 0 0.5 1.0 1.5 2.0 2.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 3.0 5.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 25°C 4.0 3.5 3.0 2.5 2.0 ID = 200 mA 1.5 1.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 4.5 TJ = 25°C 4.0 3.5 VGS = 1.5 V 3.0 2.5 VGS = 1.8 V 2.0 1.5 1.0 VGS = 2.5 V 0.5 0 VGS = 4.5 V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1000 1.8 1.7 1.6 VGS = 4.5 V ID = 200 mA TJ = 150°C 1.5 1.4 1.3 1.2 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 25°C 0.7 5.0 RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 4.5 0.5 0 VDS = 5.0 V 0.9 VGS = 2.0 V ID, DRAIN CURRENT (A) 1.0 VGS = 1.8 V ID = 50 mA 1.1 1.0 0.9 0.8 0.7 0.6 −50 100 TJ = 125°C 10 TJ = 85°C −25 0 25 50 75 100 125 150 1 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTNS3164NZ TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) 30 CISS 25 VGS, GATE−TO−SOURCE VOLTAGE (V) VGS = 0 V f = 1 MHz TJ = 25°C 20 15 10 COSS 5 0 CRSS 0 2 6 4 8 10 12 16 14 18 20 5 VDS VGS 3 8 6 2 QGD QGS 1 0 4 VDS = 10 V ID = 0.2 A TJ = 25°C 0 0.1 0.2 0.3 0.4 0.5 0.6 2 0.7 0 0.9 0.8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 IS, SOURCE CURRENT (A) t, TIME (ns) td(off) tf VGS = 4.5 V VDD = 10 V tr td(on) 1 10 TJ = 125°C TJ = 25°C 1 TJ = −55°C 0.1 0.01 0.001 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 0.85 10 VGS ≤ 8 V Single Pulse TC = 25°C ID = 250 mA ID, DRAIN CURRENT (A) 0.80 0.75 VGS(th) (V) 10 4 100 10 12 QT VDS, DRAIN−TO−SOURCE VOLTAGE (V) 35 0.70 0.65 0.60 0.55 1 10 ms 100 ms 1 ms 0.1 10 ms 0.01 RDS(on) Limit Thermal Limit Package Limit 0.50 0.45 −50 −25 0 25 50 75 100 125 150 0.001 0.1 1 dc 10 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Threshold Voltage Figure 12. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 NTNS3164NZ R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W) TYPICAL CHARACTERISTICS 900 RqJA = 806°C/W Steady State 800 700 600 500 400 Duty Cycle = 0.5 0.05 300 200 0.2 100 0.1 0 0.02 0.01 Single Pulse 1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 t, TIME (s) Figure 13. FET Thermal Response http://onsemi.com 5 1E+00 1E+01 1E+02 1E+03 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−883 (XDFN3), 1.0x0.6, 0.35P CASE 506CB ISSUE A DATE 30 MAR 2012 SCALE 8:1 PIN ONE REFERENCE 0.10 C ÉÉ ÉÉ 0.10 C E DIM A A1 b D D2 e E E2 L TOP VIEW NOTE 3 A 0.10 C 0.10 C 3X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. EXPOSED COPPER ALLOWED AS SHOWN. A B D A1 SIDE VIEW C GENERIC MARKING DIAGRAM* SEATING PLANE XX M D2 XX = Specific Device Code M = Date Code E2 e/2 1 e 0.10 M b C A B 0.05 M C 3X 2X MILLIMETERS MIN MAX 0.340 0.440 0.000 0.030 0.075 0.200 0.950 1.075 0.620 BSC 0.350 BSC 0.550 0.675 0.425 0.550 0.170 0.300 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. L BOTTOM VIEW RECOMMENDED SOLDER FOOTPRINT* 1.10 2X 2X 0.41 0.43 1 0.55 0.20 PACKAGE OUTLINE DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON65407E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SOT−883 (XDFN3), 1.0X0.6, 0.35P PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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