NTP082N65S3HF

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET - Power, N-Channel, SUPERFET III, FRFET 650 V, 40 A, 82 mW NTP082N65S3HF www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. VDSS RDS(ON) MAX ID MAX 650 V 82 mW @ 10 V 40 A D G Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 70 mW Ultra Low Gate Charge (Typ. Qg = 81 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant Applications • • • • S POWER MOSFET G D S TO−220 CASE 340AT Telecom / Server Power Supplies Industrial Power Supplies EV Charger UPS / Solar MARKING DIAGRAM $Y&Z&3&K NTP082 N65S3HF $Y &Z &3 &K NTP082N65S3HF = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2019 September, 2019 − Rev. 1 1 Publication Order Number: NTP082N65S3HF/D NTP082N65S3HF ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 40 − Continuous (TC = 100°C) 25.5 − Pulsed (Note 1) A IDM Drain Current 100 A EAS Single Pulsed Avalanche Energy (Note 2) 510 mJ IAS Avalanche Current (Note 2) 4.8 A EAR Repetitive Avalanche Energy (Note 1) 3.13 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD TJ, TSTG TL Power Dissipation (TC = 25°C) 313 W − Derate Above 25°C 2.5 W/°C −55 to +150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 4.8 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 20 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit _C/W RqJC Thermal Resistance, Junction to Case, Max. 0.4 RqJA Thermal Resistance, Junction to Ambient, Max. 62.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NTP082N65S3HF NTP082N65S3HF TO−220 Tube N/A N/A 50 Units www.onsemi.com 2 NTP082N65S3HF ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25_C 650 V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 V DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V IGSS Gate to Body Leakage Current 0.7 V/_C 10 mA ±100 nA 5.0 V 82 mW 124 VDS = 520 V, TC = 125_C VGS = ±30 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 4 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 20 A 70 Forward Transconductance VDS = 20 V, ID = 20 A 24 S 3410 pF 70 pF gFS 3.0 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 722 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 126 pF Total Gate Charge at 10 V VDS = 400 V, ID = 20 A, VGS = 10 V (Note 4) 81 nC 24 nC 32 nC f = 1 MHz 1.9 W VDD = 400 V, ID = 20 A, VGS = 10 V Rg = 3 W (Note 4) 26 ns 21 ns Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time 80 ns Turn-Off Fall Time 4.0 ns tf SOURCE-DRAIN DIODE CHARACTERISTICS Maximum Continuous Source to Drain Diode Forward Current 40 A ISM Maximum Pulsed Source to Drain Diode Forward Current 100 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 20 A 1.3 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VDD = 400 V, ISD = 20 A, dIF/dt = 100 A/ms IS 108 ns 410 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NTP082N65S3HF TYPICAL PERFORMANCE CHARACTERISTICS 200 200 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 1 0.1 0.1 VDS = 20 V 250 ms Pulse Test 100 ID, Drain Current (A) ID, Drain Current (A) 100 150°C 10 −55°C 250 ms Pulse Test TC = 25°C 1 10 VDS, Drain−Source Voltage (V) 25°C 1 20 8 4 6 7 3 5 VGS, Gate−Source Voltage (V) 2 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 1000 TC = 25°C IS, Reverse Drain Current (A) RDS(ON), Drain−Source On−Resistance (W) 0.20 0.15 0.10 VGS = 10 V VGS = 20 V 0.05 0.00 0 20 80 40 60 ID, Drain Current (A) 100 150°C 10 25°C 1 −55°C 0.1 0.01 10 VGS, Gate−Source Voltage (V) 100000 10000 Ciss 1000 Coss 100 10 1 0.1 0.1 VGS = 0 V f = 1 MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Crss 1 10 100 VDS, Drain−Source Voltage (V) 2.0 0.5 1.0 1.5 VSD, Body Diode Forward Voltage (V) Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage Capacitances (pF) VGS = 0 V 250 ms Pulse Test 0.001 0.0 120 100 9 8 Figure 5. Capacitance Characteristics VDS = 130 V VDS = 400 V 6 4 2 0 1000 ID = 20 A 0 20 40 60 80 Qg, Total Gate Charge (nC) 100 Figure 6. Gate Charge Characteristics www.onsemi.com 4 NTP082N65S3HF TYPICAL PERFORMANCE CHARACTERISTICS (continued) 3.0 VGS = 0 V ID = 10 mA RDS(on), Drain−Source On−Resistance (Normalized) BVDSS, Drain−Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 −50 2.5 2.0 1.5 1.0 0.5 0.0 50 100 150 0 TJ, Junction Temperature (5C) 30 ms 40 100 ms ID, Drain Current (A) ID,DDrain Current (A) 100 10 ms 1 ms 10 DC Operation in this Area is Limited by RDS(on) 1 TC = 25°C TJ = 150°C Single Pulse 1 10 100 VDS, Drain−Source Voltage (V) 16 12 8 4 130 260 390 520 VDS, Drain to Source Voltage (V) 20 10 50 75 100 125 TC, Case Temperature (5C) 150 Figure 10. Maximum Drain Current vs. Case Temperature 20 0 30 0 25 1000 Figure 9. Maximum Safe Operating Area EOSS, (mJ) 0 50 100 150 TJ, Junction Temperature (5C) 50 200 0 −50 Figure 8. On−Resistance Variation vs. Temperature Figure 7. Breakdown Voltage Variation vs. Temperature 0.1 VGS = 10 V ID = 20 A 650 Figure 11. EOSS vs. Drain to Source Voltage www.onsemi.com 5 NTP082N65S3HF r(t), Normalized Effective Transient Thermal Resistance TYPICAL PERFORMANCE CHARACTERISTICS (continued) 2 1 0.1 DUTY CYCLE − DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 0.001 −5 10 ZqJC(t) = r(t) x RqJC RqJC = 0.4°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 10 −4 t2 10 −3 −2 −1 10 10 t, Rectangular Pulse Duration (sec) 10 0 Figure 12. Transient Thermal Response Curve www.onsemi.com 6 10 1 10 2 NTP082N65S3HF VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time NTP082N65S3HF + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 NTP082N65S3HF TO−220−3LD CASE 340AT ISSUE A www.onsemi.com 9 NTP082N65S3HF SUPERFET and FRFET are a registered trademark and SyncFET is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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