NTP5411NG

NTB5411N, NTP5411N Power MOSFET 80 Amps, 60 Volts N-Channel D2PAK, TO-220 Features • • • • • • • • Low RDS(on) High Current Capability Avalanche Energy Specified These are Pb−Free Devices LED Lighting and LED Backlight Drivers DC−DC Converters DC Motor Drivers Power Supplies Secondary Side Synchronous Rectification Parameter Symbol VDSS VGS VGS ID Value 60 $20 $30 80 61 PD IDM TJ, Tstg IS EAS 166 185 −55 to 175 75 280 W A °C A mJ Unit V V V A http://onsemi.com ID MAX (Note 1) 80 A V(BR)DSS 60 V RDS(ON) MAX 10 mW @ 10 V Applications N−Channel D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) G S 4 4 1 2 3 TO−220AB CASE 221A STYLE 5 3 D2PAK CASE 418B STYLE 2 Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Gate−to−Source Voltage − Nonrepetitive (TP < 10 ms) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C tp = 10 ms 1 Operating and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 75 A, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds 2 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain 4 Drain TL 260 °C NTP 5411NG AYWW 1 Gate 2 Drain 3 Source 1 Gate THERMAL RESISTANCE RATINGS Parameter Junction−to−Case (Drain) Steady State (Note 1) Symbol RqJC RqJA Max 0.9 43 Unit °C/W NTB 5411NG AYWW 2 Drain 3 Source Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [1 oz] including traces). G A Y WW = Pb−Free Device = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2009 October, 2009 − Rev. 2 1 Publication Order Number: NTB5411N/D NTB5411N, NTP5411N ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified) Characteristics OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(th) VGS(th)/TJ VDS(on) RDS(on) gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD td(on) tr td(off) tf VSD trr ta tb QRR VGS = 0 V IS = 37.5 A TJ = 25°C TJ = 150°C VGS = 10 V, VDD = 48 V, ID = 80 A, RG = 9.1 W VGS = 10 V, VDS = 48 V, ID = 80 A VGS = 10 V, ID = 80 A VGS = 10 V, ID = 40 A, 150°C Static Drain−to−Source On−Resistance Forward Transconductance CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge VDS = 25 V, VGS = 0 V, f = 1 MHz 3365 615 230 92 4.1 19 43 130 nC 4500 pF VGS = 10 V, ID = 40 A VGS = 15 V, ID = 40 A VGS = 0 V VDS = 60 V TJ = 25°C TJ = 150°C VDS = 0 V, ID = 250 mA 60 54.2 10 100 $100 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit Gate−Body Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Voltage VDS = 0 V, VGS = $20 V VGS = VDS, ID = 250 mA 2.0 3.2 6.6 0.71 0.65 8.4 70 4.0 V mV/°C 0.92 V 10 mW S SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage 0.91 0.8 62 43 19 0.15 mC ns 1.1 Vdc 22 122 116 113 ns Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Stored Charge IS = 37.5 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTB5411N, NTP5411N TYPICAL PERFORMANCE CURVES 140 120 ID, DRAIN CURRENT (A) 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 VGS = 4.5 V 3.2 3.6 4.0 5.5 V 7V 140 120 ID, DRAIN CURRENT (A) 100 80 60 40 20 0 3.0 3.5 TJ = 25°C TJ = 125°C TJ = −55°C VDS w 10 V 10 V 6.5 V TJ = 25°C 6V 4.0 4.5 5.0 5.5 6.0 6.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) Figure 2. Transfer Characteristics 15 14 13 12 11 10 9 8 5 6 7 8 9 10 ID = 40 A TJ = 25°C 12 11 10 9 8 7 6 5 10 TJ = 25°C VGS = 10 V 30 50 70 90 110 130 150 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 10 ID = 40 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150°C 100 TJ = 125°C 5 10 15 20 25 30 35 40 45 50 55 60 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTB5411N, NTP5411N TYPICAL PERFORMANCE CURVES 7000 6000 C, CAPACITANCE (pF) 5000 4000 3000 2000 1000 0 0 Crss 10 20 30 Coss 40 50 60 Ciss VGS = 0 V TJ = 25°C 10 9 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 VDS = 48 V ID = 80 A TJ = 25°C 70 80 90 Qg, TOTAL GATE CHARGE (nC) Q1 Q2 VGS, GATE−TO−SOURCE VOLTAGE (V) QT VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 70 IS, SOURCE CURRENT (A) 60 50 40 30 20 10 0 0.4 Figure 8. Gate−to−Source Voltage vs. Total Charge VGS = 0 V TJ = 25°C VDD = 48 V ID = 80 A VGS = 10 V tr tf td(off) 100 t, TIME (ns) 10 td(on) 1 1 10 RG, GATE RESISTANCE (W) 100 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 10 ms dc 10 0 V ≤ VGS ≤ 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1 ms 100 ms 10 ms AVALANCHE ENERGY (mJ) 300 Figure 10. Diode Forward Voltage vs. Current ID = 75 A 250 200 150 100 50 0 25 ID, DRAIN CURRENT (A) 100 1 0.1 50 75 100 125 150 175 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 NTB5411N, NTP5411N TYPICAL PERFORMANCE CURVES 100 D = 0.5 10 1 0.1 0.01 Surface−Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.2 0.1 0.05 0.02 0.01 r(t), (°C/W) t, PULSE TIME (s) Figure 13. Thermal Response ORDERING INFORMATION Device NTP5411NG NTB5411NT4G Package TO−220AB (Pb−Free) D2PAK (Pb−Free) Shipping† 50 Units / Rail 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTB5411N, NTP5411N PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 C E −B− 4 V W 1 2 3 S A −T− SEATING PLANE K G D 3 PL 0.13 (0.005) H M J W TB M VARIABLE CONFIGURATION ZONE L M R N U L P L M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN M F VIEW W−W 1 F VIEW W−W 2 F VIEW W−W 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 3.504 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS 2X 2X *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 NTB5411N, NTP5411N PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 −T− B 4 SEATING PLANE F T C S Q 123 A U K H Z L V G D N R J STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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