NTST30U100CT,
NTSB30U100CT-1,
NTSJ30U100CTG,
NTSB30U100CTG
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low VF = 0.42 V at IF = 5 A
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
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VERY LOW FORWARD VOLTAGE, LOW LEAKAGE SCHOTTKY BARRIER
RECTIFIERS 30 AMPERES,
100 VOLTS
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
Pb−Free and Halide−Free Packages are Available
PIN CONNECTIONS
1
2, 4
3
4
4
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
•
•
•
•
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
1
2
3
Mechanical Characteristics
TO−220AB
CASE 221A
STYLE 6
12
3
I2PAK
CASE 418D
STYLE 3
4
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
1
2
TO−220FP
CASE 221AH
D2PAK
CASE 418B
3
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 8
1
Publication Order Number:
NTST30U100CT/D
NTST30U100CT, NTSB30U100CT−1, NTSJ30U100CTG, NTSB30U100CTG
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 125°C)
Per device
Per diode
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 120°C)
Per device
Per diode
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Symbol
Value
Unit
VRRM
VRWM
VR
100
V
IF(AV)
A
30
15
IFRM
A
60
30
IFSM
160
A
TJ
−40 to +150
°C
Storage Temperature
Tstg
−40 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Operating Junction Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
NTST30U100CTG,
NTSB30U100CT−1G
NTSB30U100CTG
NTSJ30U100CTG
Unit
Maximum Thermal Resistance per Diode
Junction−to−Case
Junction−to−Ambient
RqJC
RqJA
2.5
70
0.93
46.5
3.81
105
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 7.5 A, TJ = 25°C)
(IF = 15 A, TJ = 25°C)
vF
(IF = 5 A, TJ = 125°C)
(IF = 7.5 A, TJ = 125°C)
(IF = 15 A, TJ = 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(VR = 70 V, TJ = 25°C)
(VR = 70 V, TJ = 125°C)
IR
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
Typ
Max
0.47
0.52
0.66
−
−
0.80
0.42
0.48
0.60
−
−
0.65
15
12
65
32
Unit
V
mA
mA
675
60
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
www.onsemi.com
2
NTST30U100CT, NTSB30U100CT−1, NTSJ30U100CTG, NTSB30U100CTG
100
100
TA = 150°C
I R , REVERSE CURRENT (mA)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
TYPICAL CHARACTERISITICS
TA = 25°C
10
TA = 125°C
1.0
0.1
TA = 150°C
10
TA = 125°C
1.0
TA = 25°C
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
20
30
CJ, JUNCTION CAPACITANCE (pF)
10000
TJ = 25°C
1000
100
0.1
1
10
VR, REVERSE VOLTAGE (VOLTS)
100
20
15
SQUARE WAVE
10
5
0
0
20
35
30
25
SQUARE WAVE
20
15
10
5
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
IF(AV), AVERAGE FORWARD CURRENT (A)
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
30
RqJC = 1.3°C/W
45
40
0
RqJC = 1.3°C/W
dc
25
140
Figure 4. Current Derating per Leg
60
dc
100
30
Figure 3. Typical Junction Capacitance
55
50
90
Figure 2. Typical Reverse Current
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 1. Typical Forward Voltage
50
70
40
60
80
VR, REVERSE VOLTAGE (VOLTS)
25
IPK/IAV = 5
IPK/IAV = 20
20
15
SQUARE
WAVE
10
dc
5
0
140
IPK/IAV = 10
TA = 150°C
0
2
4
6
8
10
12
14
16
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating, Case
Figure 6. Forward Power Dissipation
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3
18
NTST30U100CT, NTSB30U100CT−1, NTSJ30U100CTG, NTSB30U100CTG
TYPICAL CHARACTERISITICS
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
10
1
50% Duty Cycle
20%
0.1
10%
5%
2%
Single Pulse
1%
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, Pulse Time (sec)
1
10
100
1000
Figure 7. Typical Transient Thermal Response, Junction−to−Case for NTST30U100CT and NTSB30U100CT−1G
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
10
50% Duty Cycle
1
20%
0.1
10%
5%
2%
1%
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, Pulse Time (sec)
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
Figure 8. Typical Transient Thermal Response, Junction−to−Case for NTSJ30U100CTG
1
50% Duty Cycle
0.1
20%
10%
5%
2%
1%
0.01
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
t, Pulse Time (sec)
1
10
100
Figure 9. Typical Transient Thermal Response, Junction−to−Case for NTSB30U100CTG
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4
1000
NTST30U100CT, NTSB30U100CT−1, NTSJ30U100CTG, NTSB30U100CTG
ORDERING INFORMATION
Package
Shipping†
NTST30U100CTG
TO−220AB
(Pb−Free)
50 Units / Rail
NTST30U100CTH
TO−220AB
(Halide−Free)
50 Units / Rail
I2PAK
(Pb−Free)
50 Units / Rail
NTSJ30U100CTG
TO−220FP
(Halide−Free)
50 Units / Rail
NTSB30U100CTG
D2PAK
(Pb−Free)
50 Units / Rail
NTSB30U100CTT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
Device
NTSB30U100CT−1G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
AYWW
TS30U10Cx
AKA
AYWW
TS30U10CG
AKA
TO−220AB
TO−220FP
A
Y
WW
AKA
x
G
H
AYWW
TS30U10CG
AKA
I2PAK
= Assembly Location
= Year
= Work Week
= Polarity Designator
= G or H
= Pb−Free Package
= Halide−Free Package
www.onsemi.com
5
AYWW
TS30U10CG
AKA
D2PAK
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE F
A
E
B
P
E/2
0.14
SCALE 1:1
Q
D
M
B A
A
H1
M
A1
C
NOTE 3
1 2 3
L
L1
3X
3X
SEATING
PLANE
b2
c
b
0.25
M
B A
M
C
A2
e
SIDE VIEW
FRONT VIEW
SECTION D−D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE
PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA
SURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.
6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY
MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1
AND H1 FOR MANUFACTURING PURPOSES.
MILLIMETERS
MIN
MAX
4.30
4.70
2.50
2.90
2.50
2.90
0.54
0.84
1.10
1.40
0.49
0.79
14.70
15.30
9.70
10.30
2.54 BSC
6.60
7.10
12.50
14.73
--2.80
3.00
3.40
2.80
3.20
DIM
A
A1
A2
b
b2
c
D
E
e
H1
L
L1
P
Q
GENERIC
MARKING DIAGRAM*
A
NOTE 6
DATE 30 SEP 2014
NOTE 6
H1
D
D
XX
XXXXXXXXX
AWLYWWG
A
SECTION A−A
ALTERNATE CONSTRUCTION
1
STYLE 1:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
STYLE 2:
PIN 1. CATHODE
2. ANODE
3. GATE
DOCUMENT NUMBER:
98AON52577E
DESCRIPTION:
A
WL
Y
WW
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
TO−220 FULLPACK, 3−LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
I2PAK (TO−262)
CASE 418D−01
ISSUE D
DATE 16 OCT 2007
C
E
V
−B−
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
A
W
1
2
DIM
A
B
C
D
E
F
G
H
J
K
S
V
W
3
F
−T−
SEATING
PLANE
K
S
D 3 PL
0.13 (0.005) M T B
STYLE 1:
PIN 1.
2.
3.
4.
DESCRIPTION:
MILLIMETERS
MIN
MAX
8.51
9.65
9.65
10.31
4.06
4.70
0.66
0.89
1.14
1.40
3.10 REF
2.54 BSC
2.39
2.79
0.33
0.64
12.70
14.27
9.90 REF
1.14
1.78
13.25
14.00
J
G
DOCUMENT NUMBER:
INCHES
MIN
MAX
0.335
0.380
0.380
0.406
0.160
0.185
0.026
0.035
0.045
0.055
0.122 REF
0.100 BSC
0.094
0.110
0.013
0.025
0.500
0.562
0.390 REF
0.045
0.070
0.522
0.551
BASE
COLLECTOR
EMITTER
COLLECTOR
98ASB16716C
I2PAK (TO−262)
H
M
STYLE 2:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 3:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
STYLE 4:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE L
DATE 17 FEB 2015
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
−B−
V
W
4
1
2
A
S
3
−T−
SEATING
PLANE
K
W
J
G
D
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
H
3 PL
0.13 (0.005)
M
T B
M
VARIABLE
CONFIGURATION
ZONE
N
R
P
L
M
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
L
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
U
L
M
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 5:
STYLE 6:
PIN 1. CATHODE
PIN 1. NO CONNECT
2. ANODE
2. CATHODE
3. CATHODE
3. ANODE
4. ANODE
4. CATHODE
MARKING INFORMATION AND FOOTPRINT ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42761B
D2PAK 3
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
D2PAK 3
CASE 418B−04
ISSUE L
DATE 17 FEB 2015
GENERIC
MARKING DIAGRAM*
xx
xxxxxxxxx
AWLYWWG
xxxxxxxxG
AYWW
AYWW
xxxxxxxxG
AKA
IC
Standard
Rectifier
xx
A
WL
Y
WW
G
AKA
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
= Polarity Indicator
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42761B
D2PAK 3
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
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