NTTFS4C02N
MOSFET – Power, Single,
N-Channel, m8FL
30 V, 170 A
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
V(BR)DSS
RDS(on) MAX
2.25 mW @ 10 V
30 V
Applications
N−Channel MOSFET
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
D (5−8)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
29
A
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
Power Dissipation RqJA
(Note 1)
TA = 25°C
PD
2.7
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
36
A
Continuous Drain
Current RqJA (Note 2)
TA = 85°C
G (4)
21
S (1,2,3)
MARKING DIAGRAM
TA = 85°C
Steady
State
26
TA = 25°C
PD
4.2
W
TA = 25°C
ID
16
A
TA = 85°C
12
Power Dissipation
RqJA (Note 2)
TA = 25°C
PD
0.83
W
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
ID
170
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
91
W
TA = 25°C, tp = 10 ms
IDM
500
A
TJ,
Tstg
−55 to
+150
°C
IS
100
A
Drain to Source dV/dt
dV/dt
6.0
V/ns
Single Pulse Drain−to−Source Avalanche Energy
(IL = 37 Apk) (Note 3)
EAS
162
mJ
TL
260
°C
Pulsed Drain Current
170 A
3.1 mW @ 4.5 V
• DC−DC Converters
• Power Load Switch
• Notebook Battery Management
Power Dissipation
RqJA ≤ 10 s (Note 1)
ID MAX
TC = 85°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
1
WDFN8
(m8FL)
CASE 511AB
4C02
A
Y
WW
G
1
S
S
S
G
4C02
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
120
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS4C02NTAG
WDFN8
(Pb−Free)
1500 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
© Semiconductor Components Industries, LLC, 2016
June, 2019 − Rev. 7
1
Publication Order Number:
NTTFS4C02N/D
NTTFS4C02N
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 36 A, EAS = 65 mJ.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Junction−to−Case (Drain)
RqJC
1.4
Junction−to−Ambient – Steady State (Note 4)
RqJA
46
Junction−to−Ambient – Steady State (Note 5)
RqJA
150
Junction−to−Ambient – (t ≤ 10 s) (Note 4)
RqJA
30
Unit
°C/W
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
V
13.8
VGS = 0 V,
VDS = 24 V
VGS = 0 V,
VDS = 30 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
TJ = 25°C
10
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
mA
100
nA
2.2
V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
Gate Resistance
1.3
1.6
5.0
mV/°C
VGS = 10 V
ID = 20 A
1.9
2.25
VGS = 4.5 V
ID = 20 A
2.7
3.1
VDS = 1.5 V, ID = 50 A
mW
140
S
RG
0.9
W
Input Capacitance
CISS
2980
Output Capacitance
COSS
CHARGES AND CAPACITANCES
VGS = 0 V, f = 1 MHz, VDS = 15 V
1200
pF
Reverse Transfer Capacitance
CRSS
Output Charge
QOSS
VGS = 0 V, VDD = 15 V
25
Capacitance Ratio
CRSS/CISS
VGS = 0 V, VDS = 15 V, f = 1 MHz
0.018
Total Gate Charge
QG(TOT)
20
Threshold Gate Charge
QG(TH)
4.7
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
4
Gate Plateau Voltage
VGP
2.8
V
45
nC
Total Gate Charge
55
VGS = 4.5 V, VDS = 15 V; ID = 50 A
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 50 A
SWITCHING CHARACTERISTICS (Note 7)
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
8.5
nC
nC
NTTFS4C02N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
12
VGS = 4.5 V, VDS = 15 V,
ID = 50 A, RG = 3.0 W
tf
116
10
td(ON)
9
tr
102
td(OFF)
ns
25
VGS = 10 V, VDS = 15 V,
ID = 50 A, RG = 3.0 W
tf
ns
33
6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.8
TJ = 125°C
0.6
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 20 A
1.1
V
42
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
21
ns
21
28
nC
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
NTTFS4C02N
TYPICAL CHARACTERISTICS
160
3.4 V to 10 V
160
3.2 V
ID, DRAIN CURRENT (A)
140
120
3.0 V
100
80
2.8 V
60
40
2.6 V
20
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
120
100
80
60
TJ = 25°C
40
0
5.0
TJ = 125°C
2.0
TJ = −55°C
2.5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 20 A
5
4
3
2
1
0
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
3.5
3.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
3.5
TJ = 25°C
VGS = 4.5 V
3.0
2.5
VGS = 10 V
2.0
1.5
1.0
20
40
60
80
100
120
140
160
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2
100K
VGS = 10 V
ID = 20 A
1.8
TJ = 150°C
1.6
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
1.5
1.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
6
3
VDS = 10 V
20
VGS = 2.4 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
140
1.4
1.2
1
0.8
10K
TJ = 125°C
1K
TJ = 85°C
100
0.6
10
0.4
−50
−25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
150
175
5
10
15
20
25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
4
30
NTTFS4C02N
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
10K
C, CAPACITANCE (pF)
CISS
1K
COSS
100
CRSS
10
1
VGS = 0 V
TJ = 25°C
f = 1 MHz
0
10
5
15
25
20
30
6
5
4
QGS
3
QGD
2
VDS = 15 V
TJ = 25°C
ID = 50 A
1
0
4
2
0
6
8
12
10
16
14
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1K
20
18
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
td(off)
td(on)
10
VGS = 4.5 V
VDS = 15 V
ID = 50 A
tf
1
1K
ID, DRAIN CURRENT (A)
IS, SOURCE CURRENT (A)
tr
100
100
1
10
100
TJ = 125°C
0.3
0.4
TJ = 25°C
0.5
0.6
0.7
TJ = −55°C
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1K
TC = 25°C
VGS ≤ 10 V
Single Pulse
TJ (initial) = 25°C
100
100 ms
10
DC
1
1 ms
10 ms
0.01
0.1
1
10
TJ (initial) = 100°C
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.01
10
1
IPEAK, (A)
t, TIME (ns)
VGS = 0 V
0.1
10
100
0.000001
0.00001
0.0001
0.001
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
www.onsemi.com
5
0.01
NTTFS4C02N
TYPICAL CHARACTERISTICS
10
50% Duty Cycle
R(t) (°C/W)
20%
1
10%
5%
2%
0.1
1%
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 13. Thermal Characteristics
www.onsemi.com
6
0.1
1
10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
1
SCALE 2:1
DATE 23 APR 2012
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
D1
B
2X
0.20 C
8 7 6 5
4X
E1 E
q
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
e
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
DETAIL A
8X
e/2
1
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
0.65
PITCH
PACKAGE
OUTLINE
4X
0.66
M
E3
8
5
D2
BOTTOM VIEW
1
3.60
L1
GENERIC
MARKING DIAGRAM*
XXXXX
A
Y
WW
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
L
G
SEATING
PLANE
DETAIL A
K
E2
C
6X
0.10 C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
XXXXX
AYWWG
G
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30561E
WDFN8 3.3X3.3, 0.65P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative