NTTFS4C05NTAG

NTTFS4C05N MOSFET – Power, Single, N-Channel, m8FL 30 V, 75 A Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications www.onsemi.com V(BR)DSS Symbol N−Channel MOSFET Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 19.4 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.16 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 28 A Continuous Drain Current RqJA (Note 2) TA = 85°C TA = 25°C PD 4.5 W TA = 25°C ID 12.0 A TA = 85°C PD 0.82 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 75 A Power Dissipation RqJC (Note 1) TC = 25°C PD TA = 25°C, tp = 10 ms IDM 174 A TJ, Tstg −55 to +150 °C IS 30 A Drain to Source dV/dt dV/dt 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 41 Apk, L = 0.1 mH, RG = 25 W) (Note 3) EAS 84 mJ TL 260 °C TC = 85°C Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 56 33 W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C, VGS = 10 V, IL = 29 A, EAS = 42 mJ. © Semiconductor Components Industries, LLC, 2012 June, 2019 − Rev. 2 S (1,2,3) MARKING DIAGRAM 1 S S S G 1 WDFN8 (m8FL) CASE 511AB 4C05 AYWWG G D D D D 8.9 TA = 25°C Operating Junction and Storage Temperature G (4) 21 Power Dissipation RqJA (Note 2) Pulsed Drain Current D (5−8) 14.5 TA = 85°C Steady State 75 A 5.1 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter ID MAX 3.6 mW @ 10 V 30 V • DC−DC Converters • Power Load Switch • Notebook Battery Management Power Dissipation RqJA ≤ 10 s (Note 1) RDS(on) MAX 1 4C05 A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTTFS4C05NTAG WDFN8 (Pb−Free) 1500 / Tape & Reel NTTFS4C05NTWG WDFN8 (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTTFS4C05N/D NTTFS4C05N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 3.8 Junction−to−Ambient – Steady State (Note 4) RqJA 57.8 Junction−to−Ambient – Steady State (Note 5) RqJA 151.9 Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 27.6 Unit °C/W 4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 5. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage (transient) V(BR)DSSt VGS = 0 V, ID(aval) = 12.6 A, Tcase = 25°C, ttransient = 100 ns 34 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V V 11.7 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.3 5.0 mV/°C VGS = 10 V ID = 30 A 2.9 3.6 VGS = 4.5 V ID = 30 A 4.1 5.1 mW Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 68 S Gate Resistance RG TA = 25°C 1.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 1988 VGS = 0 V, f = 1 MHz, VDS = 15 V 1224 pF 71 Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) 14.5 Threshold Gate Charge QG(TH) 2.9 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 5.5 Gate Plateau Voltage VGP 3.1 V 31 nC Total Gate Charge VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 4.5 V, VDS = 15 V; ID = 30 A QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 0.036 5.2 nC SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 11 VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 30 20 8.0 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 ns NTTFS4C05N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 8.0 VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 25 ns 26 5.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.77 TJ = 125°C 0.62 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 42.4 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 21.1 ns 21.3 34.4 nC 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NTTFS4C05N 0.028 0.026 0.024 0.022 0.020 0.018 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 3.0 TJ = 25°C 3.8 V 3.6 V 4 V to 6.5 V ID, DRAIN CURRENT (A) 140 130 10 V 120 110 100 90 80 70 60 50 40 30 20 10 0 0 3.4 V 3.2 V 3.0 V 2.8 V 2.6 V 1 2 3 5 4 140 130 VDS = 5 V 120 110 100 90 80 70 60 50 40 30 20 10 0 0 0.5 1.0 2.0 2.5 3.0 3.5 4.0 Figure 2. Transfer Characteristics ID = 30 A TJ = 25°C 4.0 5.0 6.0 7.0 8.0 9.0 0.008 4.5 TJ = 25°C 0.007 0.006 0.005 VGS = 4.5 V 0.004 VGS = 10 V 0.003 0.002 10 10 20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10000 1.7 VGS = 0 V ID = 30 A VGS = 10 V TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = −55°C 1.5 Figure 1. On−Region Characteristics Figure 3. On−Resistance vs. VGS 1.5 TJ = 25°C VGS, GATE−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) 1.6 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS 1.4 1.3 1.2 1.1 1.0 1000 TJ = 125°C 100 TJ = 85°C 0.9 0.8 0.7 −50 −25 0 25 50 75 100 125 150 10 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 30 NTTFS4C05N TYPICAL CHARACTERISTICS VGS = 0 V TJ = 25°C 2750 2500 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) 3000 2250 Ciss 2000 1750 1500 1250 1000 Coss 750 500 250 0 Crss 0 5 10 15 20 25 30 QT 8 6 4 Qgd Qgs TJ = 25°C VDD = 15 V VGS = 10 V ID = 30 A 2 0 0 4 8 12 16 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge IS, SOURCE CURRENT (A) 18 td(off) td(on) 100 tr tf 10 1 10 16 14 12 10 8 6 4 TJ = 125°C TJ = 25°C 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 10 ms 100 ms 1 ms 10 10 ms 0 V < VGS < 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 0.1 dc 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) 0.5 RG, GATE RESISTANCE (W) 1000 0.01 0.01 0 0.4 100 32 VGS = 0 V 2 0.1 28 Figure 7. Capacitance Variation 20 1 24 Qg, TOTAL GATE CHARGE (nC) VDD = 15 V ID = 15 A VGS = 10 V 1 20 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 t, TIME (ns) 10 100 45 ID = 29 A 40 35 30 25 20 15 10 5 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature www.onsemi.com 5 150 NTTFS4C05N TYPICAL CHARACTERISTICS 100 R(t) (°C/W) Duty Cycle = 50% 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response 100 120 ID, DRAIN CURRENT (A) 100 GFS (S) 80 60 40 20 0 0 10 20 30 40 50 60 70 TA = 25°C 1 1.E−07 80 TA = 85°C 10 1.E−06 1.E−05 1.E−04 ID (A) PULSE WIDTH (SECONDS) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics www.onsemi.com 6 1.E−03 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 1 SCALE 2:1 DATE 23 APR 2012 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A e SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 8X e/2 1 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 0.65 PITCH PACKAGE OUTLINE 4X 0.66 M E3 8 5 D2 BOTTOM VIEW 1 3.60 L1 GENERIC MARKING DIAGRAM* XXXXX A Y WW G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* L G SEATING PLANE DETAIL A K E2 C 6X 0.10 C DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q XXXXX AYWWG G 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON30561E WDFN8 3.3X3.3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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