NTTFS6H850NTAG

NTTFS6H850N MOSFET – Power, Single, N-Channel 80 V, 9.5 mW, 68 A Features • • • • www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V ID 68 A Continuous Drain Current RJC (Notes 1, 2, 3, 4) TC = 25°C Power Dissipation RJC (Notes 1, 2, 3) Continuous Drain Current RJA (Notes 1 & 3, 4) Steady State TC = 100°C TC = 25°C Power Dissipation RJA (Notes 1, 3) Pulsed Drain Current Steady State PD W 107 ID PD W 3.2 1.6 300 A −55 to +175 °C IS 89 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 3.4 A) EAS 271 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter 68 A N−Channel D (5 − 8) G (4) S (1, 2, 3) MARKING DIAGRAM IDM Source Current (Body Diode) 9.5 m @ 10 V 8.4 TJ, Tstg TA = 25°C, tp = 10 s 80 V A 11 TA = 100°C Operating Junction and Storage Temperature ID MAX 53 TA = 100°C TA = 25°C RDS(on) MAX 48 TC = 100°C TA = 25°C V(BR)DSS Symbol Value Unit Junction−to−Case − Steady State (Note 3) RJC 1.4 °C/W Junction−to−Ambient − Steady State (Note 3) RJA 47 1 WDFN8 (m8FL) CASE 511AB 850N A Y WW G 1 S S S G 850N AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi () is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2017 June, 2019 − Rev. 1 1 Publication Order Number: NTTFS6H850N/D NTTFS6H850N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 A 80 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = 80 V V TJ = 25°C 10 TJ = 125°C 250 100 A IGSS VDS = 0 V, VGS = 20 V nA Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 70 A 4.0 V Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 10 A 8.5 9.5 m VGS = 6 V, ID = 10 A 13 17 VDS = 15 V, ID = 10 A 63 S 1140 pF ON CHARACTERISTICS (Note 5) Forward Transconductance gFS 2.0 CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Charge Qoss 25 nC Threshold Gate Charge QG(TH) 3.6 nC Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge QG(TOT) VGS = 0 V, f = 1.0 MHz, VDS = 40 V VGS = 10 V, VDS = 40 V, ID = 10 A 175 10 6.5 3.7 VGS = 10 V, VDS = 40 V, ID = 10 A 19 nC 11 ns SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = 6.0 V, VDS = 64 V, ID = 10 A tf 32 34 8.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.8 TJ = 125°C 0.7 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 40 VGS = 0 V, dlS/dt = 100 A/s, IS = 10 A QRR www.onsemi.com 2 V ns 24 16 40 5. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. 1.2 nC NTTFS6H850N TYPICAL CHARACTERISTICS 100 70 5.0 V 60 50 40 30 4.5 V 20 10 0 1 2 4 3 5 6 40 30 TJ = 25°C 20 TJ = 125°C TJ = −55°C 4 3 5 6 7 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 10 A TJ = 25°C 24 22 20 18 16 14 4 5 6 7 8 9 10 18 TJ = 25°C 17 16 15 14 VGS = 6 V 13 12 11 10 VGS = 10 V 9 8 7 6 5 10 15 20 30 25 40 35 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.6 2.2 60 50 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 28 26 2.4 70 0 2 7 30 12 10 8 6 80 10 VGS = 4.0 V 100K TJ = 175°C ID = 10 A VGS = 10 V TJ = 150°C 10K IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) ID, DRAIN CURRENT (A) 5.5 V 80 VDS = 10 V 90 RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) ID, DRAIN CURRENT (A) 100 6 V to 10 V 90 2.0 1.8 1.6 1.4 1.2 1.0 TJ = 125°C 1K TJ = 85°C 100 TJ = 25°C 10 0.8 0.6 0.4 −50 −25 0 25 50 75 100 125 150 1 175 5 15 25 35 45 55 65 75 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NTTFS6H850N TYPICAL CHARACTERISTICS Ciss 1K Coss 100 10 Crss TJ = 25°C VGS = 0 V f = 1 MHz 0 10 20 30 40 50 80 8 7 6 Qgd Qgs 5 4 3 VDS = 40 V ID = 10 A TJ = 25°C 2 1 0 0 2 4 6 8 10 14 12 16 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge VGS = 10 V VDS = 64 V ID = 10 A 18 VGS = 0 V td(off) tr td(on) 10 tf 1 10 10 1 TJ = 125°C 0.1 100 0.3 0.4 TJ = 25°C 0.5 0.6 TJ = −55°C 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE () VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 100 TJ(initial) = 25°C 100 10 10 TC = 25°C VGS ≤ 10 V Single Pulse 1 0.1 IPEAK (A) ID, DRAIN CURRENT (A) 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 1 10 100 1000 t, TIME (ns) 70 60 IS, SOURCE CURRENT (A) 1 VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 10K RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 TJ(initial) = 100°C 1 10 s 0.5 ms 1 ms 10 ms 100 1000 0.1 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NTTFS6H850N TYPICAL CHARACTERISTICS 100 50% Duty Cycle RJA(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, PULSE TIME (sec) Figure 13. Thermal Response DEVICE ORDERING INFORMATION Device NTTFS6H850NTAG Marking Package Shipping† 850N WDFN8 (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 1 SCALE 2:1 DATE 23 APR 2012 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A e SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 8X e/2 1 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 0.65 PITCH PACKAGE OUTLINE 4X 0.66 M E3 8 5 D2 BOTTOM VIEW 1 3.60 L1 GENERIC MARKING DIAGRAM* XXXXX A Y WW G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* L G SEATING PLANE DETAIL A K E2 C 6X 0.10 C DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q XXXXX AYWWG G 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON30561E WDFN8 3.3X3.3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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