NTTFS4H05NTAG

NTTFS4H05N MOSFET – Power, Single, N-Channel, m8-FL 25 V, 94 A Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • • • • High Performance DC-DC Converters System Voltage Rails Netcom, Telecom Servers & Point of Load MAX RDS(on) TYP QGTOT 4.5 V 4.8 mW 8.7 nC 10 V 3.3 mW 18.9 nC 1 S S S G 1 Symbol Value Units Drain-to-Source Voltage VDSS 25 V Gate-to-Source Voltage VGS ±20 V Continuous Drain Current RqJA (TA = 25°C, Note 1) ID 22.4 A Power Dissipation RqJA (TA = 25°C, Note 1) PD 2.66 W Continuous Drain Current RqJC (TC = 25°C, Note 1) ID 94 A Power Dissipation RqJC (TC = 25°C, Note 1) PD 46.3 W Pulsed Drain Current (tp = 10 ms) IDM 304 A Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 41 Apk, L = 0.1 mH) (Note 3) EAS 84 mJ Drain to Source dV/dt dV/dt 7 V/ns TJ(max) 150 °C Storage Temperature Range TSTG −55 to 150 °C Lead Temperature Soldering Reflow (SMD Styles Only), Pb-Free Versions (Note 2) TSLD 260 °C Maximum Junction Temperature VGS MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter www.onsemi.com WDFN8 (m8FL) CASE 511AB H05N A Y WW G H05N AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS m8−FL (3.3 x 3.3 mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness and FR4 PCB substrate. 2. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C, VGS = 10 V, IL = 27 A, EAS = 36 mJ. (Top View) (Bottom View) N−CHANNEL MOSFET D (5−8) G (4) S (1,2,3) ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2016 June, 2019 − Rev. 4 1 Publication Order Number: NTTFS4H05N/D NTTFS4H05N THERMALCHARACTERISTICS Parameter Thermal Resistance, Junction-to-Ambient (Note 1 and 4) Junction-to-Case (Note 1 and 4) Symbol Max RqJA RqJC 47 2.7 Units °C/W 4. Thermal Resistance RqJA and RqJC as defined in JESD51−3. www.onsemi.com 2 NTTFS4H05N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 25 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 15 VGS = 0 V, VDS = 20 V mV/°C TJ = 25°C 1.0 TJ = 125°C 20 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.1 3.8 VGS = 10 V ID = 30 A 2.5 3.3 VGS = 4.5 V ID = 30 A 3.8 4.8 gFS VDS = 12 V, ID = 15 A V mV/°C 69 mW S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS 1205 1812 835 1293 Reverse Transfer Capacitance CRSS 45 81 Total Gate Charge QG(TOT) 8.7 18.6 Threshold Gate Charge QG(TH) 2.7 6.0 Gate−to−Source Charge QGS 3.6 6.2 Gate−to−Drain Charge QGD 1.88 5.6 Total Gate Charge Gate Resistance VGS = 0 V, f = 1 MHz, VDS = 12 V VGS = 4.5 V, VDS = 12 V; ID = 30 A pF nC QG(TOT) VGS = 10 V, VDS = 12 V; ID = 30 A 18.9 40 nC RG TA = 25°C 1.0 2.0 W SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 8.9 VGS = 4.5 V, VDS = 12 V, ID = 15 A, RG = 3.0 W 32 ns 14.6 tf 3 td(ON) 6.0 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 12 V, ID = 15 A, RG = 3.0 W tf 27 ns 18.6 2.3 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD VGS = 0 V, IS = 10 A TJ = 25°C 0.78 TJ = 125°C 0.6 tRR 30.8 Charge Time ta 15 Discharge Time tb Reverse Recovery Charge VGS = 0 V, dIS/dt = 100 A/ms, IS = 10 A QRR 1.1 V 66 ns 15.8 20 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 NTTFS4H05N 4.0 V 3.8 V 100 VGS = 3.4 V 120 VGS = 3.0 V 60 VGS = 2.8 V 40 VGS = 2.6 V 20 0 0.5 1.0 1.5 2.0 2.5 80 TJ = 125°C 60 40 TJ = 25°C 0 3.0 TJ = −55°C 0 0.0042 0.0034 0.0030 0.0026 0.0022 0.0018 4 5 6 7 8 9 VGS (V) 10 2.5 3.0 3.5 4.0 T = 25°C 0.0046 0.0042 VGS = 4.5 V 0.0038 0.0034 0.0030 VGS = 10 V 0.0026 0.0022 20 30 40 50 60 70 80 90 100 110 120 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.7 1E−04 ID = 30 A VGS = 10 V VGS = 0 V TJ = 150°C 1E−05 TJ = 125°C IDSS, LEAKAGE (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2.0 0.0050 Figure 3. On−Resistance vs. VGS 1.4 1E−06 1.3 1.2 TJ = 85°C 1E−07 1.1 1E−08 1.0 0.9 0.8 0.7 −50 1.5 Figure 2. Transfer Characteristics 0.0038 1.5 1.0 Figure 1. On−Region Characteristics ID = 30 A 1.6 0.5 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.0046 3 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.0050 0.0014 0.0010 VDS = 5 V 20 VGS = 2.4 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 140 VGS = 3.2 V TJ = 25°C 80 VGS = 3.6 V ID, DRAIN CURRENT (A) 140 4.2 V 4.5 V 120 10 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS 1E−09 −25 0 25 50 75 100 125 150 1E−10 TJ = 25°C 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 25 NTTFS4H05N TYPICAL CHARACTERISTICS TJ = 25°C VGS = 0 V 1800 1600 1400 Ciss 1200 1000 Coss 800 600 400 Crss 0 1000 5 10 15 20 ID, DRAIN CURRENT (A) 6 Qgs 4 Qgd TJ = 25°C VGS = 10 V VDD = 12.0 V ID = 30 A 2 0 0 2 4 6 8 10 12 14 16 30 VDD = 12 V ID = 15 A VGS = 10 V td(off) tf td(on) 1 20 18 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 VGS = 0 V 25 20 TJ = 125°C TJ = 25°C 15 10 5 0 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 10 ms 100 100 ms 10 1 ms 1 0.01 8 Figure 7. Capacitance Variation 10 0.1 QT Qg, TOTAL GATE CHARGE (nC) tr 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 t, TIME (ns) 25 IS, SOURCE CURRENT (A) 200 0 10 ms 0 V < VGS < 10 V RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 1 dc 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) C, CAPACITANCE (pF) 2000 VGS, GATE−TO−SOURCE VOLTAGE (V) 2200 100 40 35 ID = 27 A 30 25 20 15 10 5 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature www.onsemi.com 5 150 NTTFS4H05N TYPICAL CHARACTERISTICS 100 50% Duty Cycle 20% 10% 5% R(t) (°C/W) 10 2% 1% 1 PCB Cu Area 650 mm2 PCB Cu thk 1 oz 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 1E−05 1E−04 1E−03 PULSE TIME (sec) Figure 13. Thermal Characteristics 140 1E+03 ID, DRAIN CURRENT (A) 120 GFS (S) 100 1E+02 80 60 1E+01 40 20 0 0 20 40 60 80 100 120 1E+00 140 1E−07 1E−06 ID (A) PULSE WIDTH (sec) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics www.onsemi.com 6 NTTFS4H05N ORDERING INFORMATION Package Shipping† NTTFS4H05NTAG WDFN8 (Pb-Free) 1500 / Tape & Reel NTTFS4H05NTWG WDFN8 (Pb-Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 1 SCALE 2:1 DATE 23 APR 2012 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A e SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 8X e/2 1 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 0.65 PITCH PACKAGE OUTLINE 4X 0.66 M E3 8 5 D2 BOTTOM VIEW 1 3.60 L1 GENERIC MARKING DIAGRAM* XXXXX A Y WW G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* L G SEATING PLANE DETAIL A K E2 C 6X 0.10 C DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q XXXXX AYWWG G 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON30561E WDFN8 3.3X3.3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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