NTTFS5C466NLTAG

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Other names and brands may be claimed as the property of others. MOSFET – Power, Single, N-Channel 40 V, 7.3 mW, 51 A NTTFS5C466NL Features • • • • www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant V(BR)DSS Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 51 A Continuous Drain Current RJC (Notes 1, 2, 3, 4) TC = 25°C Power Dissipation RJC (Notes 1, 2, 3) Continuous Drain Current RJA (Notes 1, 3, 4) Steady State TC = 100°C TC = 25°C Power Dissipation RJA (Notes 1, 3) Pulsed Drain Current Steady State PD W 38 19 ID PD A TJ, Tstg −55 to +175 °C IS 10 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 3 A) EAS 72 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM 1 WDFN8 (m8FL) CASE 511AB 466L A Y WW G 1 S S S G 466L AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter S (1, 2, 3) 2.1 200 Source Current (Body Diode) G (4) W 3.1 IDM Operating Junction and Storage Temperature Range D (5 − 8) 12 TA = 100°C TA = 25°C, tp = 10 s 51 A N−Channel A 14 TA = 100°C TA = 25°C 12 m @ 4.5 V 36 TC = 100°C TA = 25°C ID MAX 7.3 m @ 10 V 40 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter RDS(on) MAX Symbol Value Unit Junction−to−Case − Steady State (Note 3) RJC 3.5 °C/W Junction−to−Ambient − Steady State (Note 3) RJA 48 See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi () is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2017 September, 2019 − Rev. 4 1 Publication Order Number: NTTFS5C466NL/D NTTFS5C466NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 A 40 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Zero Gate Voltage Drain Current 29 IDSS Gate−to−Source Leakage Current V VGS = 0 V, VDS = 40 V mV/° C TJ = 25°C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 30 A Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 10 A A 100 nA 2.2 V 6.1 7.3 m VGS = 4.5 V, ID = 10 A 9.7 12 VDS = 15 V, ID = 25 A 33 S VGS = 0 V, f = 1.0 MHz, VDS = 25 V 880 pF ON CHARACTERISTICS (Note 5) Forward Transconductance gFS 1.2 CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 16 Total Gate Charge QG(TOT) 7.0 nC Threshold Gate Charge QG(TH) 1.8 nC Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge VGS = 4.5 V, VDS = 20 V, ID = 25 A 3.3 2.5 QG(TOT) VGS = 10 V, VDS = 20 V, ID = 25 A RG TA = 25°C Gate Resistance 340 16 nC 3.0  SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) ns 10 VGS = 4.5 V, VDS = 20 V, ID = 25 A, RG = 2.5  tf 67 26 32 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.9 TJ = 125°C 0.8 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 20 A 22 VGS = 0 V, dlS/dt = 100 A/s, IS = 25 A QRR 1.2 V ns 10 12 6.0 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTTFS5C466NL TYPICAL CHARACTERISTICS 100 VGS = 10 to 5 V ID, DRAIN CURRENT (A) 50 3.8 V 40 3.6 V 30 3.4 V 20 3.2 V 10 70 60 50 40 30 TJ = 25°C 20 0.5 1.0 1.5 2.0 2.5 0 3.0 0 2 1 TJ = −55°C 3 4 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 20 15 10 5 4 5 6 7 8 9 10 12 TJ = 25°C 11 6 5 VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 25 A TJ = 25°C 3 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) 0 25 0 80 10 VGS = 4.5 V 10 9 8 7 VGS = 10 V 6 5 4 10 15 20 25 30 40 35 45 50 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.1 2.0 ID = 25 A 1.9 V GS = 10 V 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 −50 −25 0 100K TJ = 150°C 10K IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) 0 VDS = 10 V 90 4.5 V 60 ID, DRAIN CURRENT (A) 70 TJ = 125°C 1K TJ = 85°C 100 TJ = 25°C 10 25 50 75 100 125 150 1 175 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NTTFS5C466NL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 10K Ciss 1K Coss 100 Crss 10 1 TJ = 25°C VGS = 0 V f = 1 MHz 0 5 15 10 20 25 30 35 40 5 Qgs 4 td(off) 3 VDS = 20 V ID = 25 A TJ = 25°C 2 1 0 0 2 4 6 8 10 12 td(on) VGS = 4.5 V VDS = 20 V ID = 25 A 1 10 TJ = 125°C 1 0.1 100 16 14 VGS = 0 V TJ = 25°C 0.3 0.4 0.5 0.6 TJ = −55°C 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE () VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 Single Pulse VGS ≤ 10 V TC = 25°C TJ(initial) = 25°C IPEAK (A) 10 10 1 0.1 Qgd Figure 8. Gate−to−Source vs. Total Charge IS, SOURCE CURRENT (A) t, TIME (ns) 6 Figure 7. Capacitance Variation tr 10 ID, DRAIN CURRENT (A) 7 Qg, TOTAL GATE CHARGE (nC) tf 100 8 10 100 1000 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 10 10 s 0.5 ms 1 ms 10 ms RDS(on) Limit Thermal Limit Package Limit 0.1 1 0.1 0.00001 100 10 TJ(initial) = 100°C 1 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NTTFS5C466NL TYPICAL CHARACTERISTICS 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response DEVICE ORDERING INFORMATION Device NTTFS5C466NLTAG Marking Package Shipping† 466L WDFN8 (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5