NUP1105LT1G

NUP1105LT1G, SZNUP1105LT1G Single Line CAN/LIN Bus Protector The NUP1105L has been designed to protect LIN and single line CAN transceivers from ESD and other harmful transient voltage events. This device provides bidirectional protection for the data line with a single SOT−23 package, giving the system designer a low cost option for improving system reliability and meeting stringent EMI requirements. www.onsemi.com SOT−23 BIDIRECTIONAL VOLTAGE SUPPRESSOR 350 W PEAK POWER Features • • • • • • • • • SOT−23 Package Allows One Separate Bidirectional Configuration 350 W Peak Power Dissipation per Line (8 x 20 msec Waveform) Low Reverse Leakage Current (< 100 nA) IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 40 A – 5/50 ns − IEC 61000−4−5 (Lighting) 8.0 A (8/20 ms) ISO 7637−1, Nonrepetitive EMI Surge Pulse TBD ISO 7637−3, Repetitive Electrical Fast Transient (EFT) TBD EMI Surge Pulses Flammability Rating UL 94 V−0 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant 1 3 2 • Automotive Electronics LIN Bus Single Line CAN Industrial Control Networks ♦ Smart Distribution Systems (SDS®) ♦ DeviceNet™ ♦ PIN 1. ANODE 2. ANODE 3. CATHODE MARKING DIAGRAM 27HMG G 1 27H M G Applications • SOT−23 CASE 318 STYLE 27 = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ♦ ORDERING INFORMATION Package Shipping† NUP1105LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZNUP1105LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel NUP1105LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2004 October, 2016 − Rev. 6 1 Publication Order Number: NUP1105L/D NUP1105LT1G, SZNUP1105LT1G MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) Symbol PPK Rating Value Peak Power Dissipation 8 x 20 ms Double Exponential Waveform (Note 1) Unit W 350 TJ Operating Junction Temperature Range −55 to 150 °C TJ Storage Temperature Range −55 to 150 °C TL Lead Solder Temperature (10 s) 260 °C Human Body model (HBM) Machine Model (MM) IEC 61000−4−2 Specification (Contact) 16 400 30 kV V kV ESD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non-repetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Symbol VRWM Parameter Test Conditions Reverse Working Voltage (Note 2) Breakdown Voltage IT = 1 mA (Note 3) IR Reverse Leakage Current VRWM = 24 V VC Clamping Voltage VC VBR Min Typ Max 24 Unit V 25.7 28.4 V 100 nA IPP = 5 A (8 x 20 ms Waveform) (Note 4) 40 V Clamping Voltage IPP = 8 A (8 x 20 ms Waveform) (Note 4) 44 V IPP Maximum Peak Pulse Current 8 x 20 ms Waveform (Note 4) 8.0 A CJ Capacitance VR = 0 V, f = 1 MHz (Anode to GND) VR = 0 V, f = 1 MHz (Anode to Anode) 60 30 pF 15 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 4. Pulse waveform per Figure 1. 5. Include SZ-prefix devices where applicable. www.onsemi.com 2 NUP1105LT1G, SZNUP1105LT1G TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) % OF PEAK PULSE CURRENT WAVEFORM PARAMETERS tr = 8 ms td = 20 ms 90 80 c−t 70 IPP, PEAK PULSE CURRENT (A) 12.0 110 100 60 td = IPP/2 50 40 30 20 10 0 0 10 5 20 15 8.0 6.0 4.0 2.0 0.0 30 25 PULSE WAVEFORM 8 x 20 ms per Figure 1 10.0 25 30 45 50 Figure 2. Clamping Voltage vs Peak Pulse Current Figure 1. Pulse Waveform, 8 × 20 ms 30 45 40 29 35 28 VZ, (V) 30 25 20 VZ 27 26 15 10 25 5 −10 40 90 140 24 −60 190 −10 40 90 140 190 TEMPERATURE (°C) TEMPERATURE (°C) Figure 3. Typical Leakage vs. Temperature Figure 4. Typical VZ @ 1.0 mA vs. Temperature 60 25°C 50 CAPACITANCE (pF) IR, (nA) 40 VC, CLAMPING VOLTAGE (V) t, TIME (ms) 0 −60 35 40 30 20 10 0 0 5 10 15 20 VBIAS Figure 5. Capacitance vs. VBIAS www.onsemi.com 3 25 NUP1105LT1G, SZNUP1105LT1G APPLICATIONS SECTION The NUP1105L provides a transient voltage suppression solution for the LIN data communication bus. The NUP1105L is a dual bidirectional TVS device in a compact SOT−23 package. This device is based on Zener technology that optimizes the active area of a PN junction to provide robust protection against transient EMI surge voltage and ESD. The NUP1105L has been tested to EMI and ESD levels that exceed the specifications of popular high speed LIN networks. VBattery = 8 to 18 V Voltage Regulator Receiver The NUP1105L device can be used to provide transcient voltage suppression for a single data line CAN system. Figure 7 provides an example of a single data line CAN protection circuit. CAN Transceiver NUP1105L Figure 7. High−Speed and Fault Tolerant CAN TVS Protection Circuit VOUT = 5 V LIN Bus Transmitter LIN Transceiver CAN_Data_Line NUP1105L Figure 6. LIN Transceiver www.onsemi.com 4 NUP1105LT1G, SZNUP1105LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0_ MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 _ MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0_ INCHES NOM MAX 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 0.021 0.027 0.094 0.104 −−− 10 _ STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SDS is a registered trademark of Honeywell International Inc. DeviceNet is a trademark of Rockwell Automation. 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