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NUP2115LT1G

NUP2115LT1G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOT-23(TO-236)

  • 描述:

    TVS DIODE 24VWM 50VC

  • 数据手册
  • 价格&库存
NUP2115LT1G 数据手册
NUP2115L, SZNUP2115L ESD Protection Diode Low Capacitance ESD Protection for High Speed Data The SZ/NUP2115L has been designed to protect the FlexRay transceiver from ESD and other harmful transient voltage events. This device provides bidirectional protection for each data line with a single compact SOT−23 package, giving the system designer a low cost option for improving system reliability and meeting stringent EMI requirements. www.onsemi.com SOT−23 DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR 200 W PEAK POWER Features • • • • • • • • • • 200 W Peak Power Dissipation per Line (8/20 ms Waveform) Diode Capacitance Matching Low Reverse Leakage Current (< 100 nA) Low Capacitance High−Speed FlexRay Data Rates IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 50 A – 5/50 ns − IEC 61000−4−5 (Lighting) 3.0 A (8/20 ms) ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 8.0 A (1/50 ms) ISO 7637−3, Repetitive Electrical Fast Transient (EFT) EMI Surge Pulses, 50 A (5/50 ns) Flammability Rating UL 94 V−0 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices SOT−23 CASE 318 STYLE 27 PIN 1 PIN 3 PIN 2 Applications • Automotive Networks ♦ FlexRay Bus MARKING DIAGRAM 25WMG G 1 25W M G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2005 October, 2017 − Rev. 4 1 Publication Order Number: NUP2115L/D NUP2115L, SZNUP2115L MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) Symbol PPK Rating Peak Power Dissipation, 8 x 20 ms Double Exponential Waveform (Note 1) Value Unit 200 W TJ Operating Junction Temperature Range −55 to 150 °C TJ Storage Temperature Range −55 to 150 °C TL Lead Solder Temperature (10 s) 260 °C Human Body Model (HBM) Machine Model (MM) IEC 61000−4−2 Specification (Contact) 8.0 400 30 kV V kV ESD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Symbol VRWM VBR Parameter Test Conditions Reverse Working Voltage (Note 2) Breakdown Voltage IT = 1 mA (Note 3) Min Typ Max Unit 24 − − V 26.2 − 32 V IR Reverse Leakage Current VRWM = 24 V − 15 100 nA VC Clamping Voltage IPP = 1 A (8/20 ms Waveform) (Note 4) − 33.4 36.6 V VC Clamping Voltage IPP = 3 A (8/20 ms Waveform) (Note 4) − 44 50 V IPP Maximum Peak Pulse Current 8/20 ms Waveform (Note 4) − − 3.0 A CJ Capacitance VR = 0 V, f = 1 MHz (Line to GND) − − 10 pF DC Diode Capacitance Matching VR = 0 V, 5 MHz (Note 5) − 0.1 2 % Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 4. Pulse waveform per Figure 1. 5. DC is the percentage difference between CJ of lines 1 and 2 measured according to the test conditions given in the electrical characteristics table. ORDERING INFORMATION Package Shipping† NUP2115LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZNUP2115LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel NUP2115LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SZNUP2115LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 NUP2115L, SZNUP2115L TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) % OF PEAK PULSE CURRENT WAVEFORM PARAMETERS tr = 8 ms td = 20 ms 90 80 c−t 70 IPP, PEAK PULSE CURRENT (A) 3.5 110 100 60 td = IPP/2 50 40 30 20 10 0 0 10 5 20 15 2.5 2.0 1.5 1.0 0.5 0.0 30 30 25 3.0 35 Figure 2. Clamping Voltage vs Peak Pulse Current Figure 1. Pulse Waveform, 8 × 20 ms 50 9 45 40 125°C 7 35 25°C 6 IT, (mA) C, CAPACITANCE (pF) 8 5 30 25 20 15 4 25°C 10 3 0 10 5 15 20 0 20 25 TA = −55°C 22 24 26 28 30 32 34 VBR, VOLTAGE (V) Figure 4. VBR versus IT Characteristics Figure 3. Typical Junction Capacitance vs Reverse Voltage 120 25 −55°C +25°C TA = +150°C 100 PERCENT DERATING (%) 20 15 10 5 0 65°C 125°C 5 VR, REVERSE VOLTAGE (V) VR, REVERSE BIAS VOLTAGE (V) 50 VC, CLAMPING VOLTAGE (V) t, TIME (ms) 2 45 40 0 1 2 3 IL, LEAKAGE CURRENT (nA) 4 80 60 40 20 0 −60 5 Figure 5. IR versus Temperature Characteristics −30 0 30 60 90 TEMPERATURE (°C) 120 150 180 Figure 6. Temperature Power Dissipation Derating www.onsemi.com 3 NUP2115L, SZNUP2115L APPLICATIONS Figure 7 provides an example of a dual bidirectional surge protection diode array that can be used for protection with the FlexRay network. The bidirectional array is created from four identical Zener surge protection diodes. The clamping voltage of the composite device is equal to the breakdown voltage of the diode that is reversed biased, plus the diode drop of the second diode that is forwarded biased. Surge protection diodes provide a low cost solution to conducted and radiated Electromagnetic Interference (EMI) and Electrostatic Discharge (ESD) noise problems. The noise immunity level and reliability of FlexRay transceivers can be easily increased by adding external surge protection diodes to prevent transient voltage failures. The NUP2115L provides a surge protection solution for FlexRay data communication lines. The NUP2115L is a dual bidirectional surge protection device in a compact SOT−23 package. This device is based on Zener technology that optimizes the active area of a PN junction to provide robust protection against transient EMI surge voltage and ESD. Surge Protection Diode Protection Circuit Surge protection diodes provide protection to a transceiver by clamping a surge voltage to a safe level. surge protection diodes have high impedance below and low impedance above their breakdown voltage. A surge protection Zener diode has its junction optimized to absorb the high peak energy of a transient event, while a standard Zener diode is designed and specified to clamp a steady state voltage. Figure 7. FlexRay Surge Protection Circuit www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 SCALE 4:1 GENERIC MARKING DIAGRAM* XXXMG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. CATHODE PIN 1. NO CONNECTION PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. ANODE 3. CATHODE−ANODE 3. GATE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
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