NVATS68301PZT4G

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AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features  Low On-Resistance  High Current Capability  100% Avalanche Tested  AEC-Q101 qualified and PPAP capable ATPAK package is pin-compatible with DPAK (TO-252﴿  Pb-Free, Halogen Free and RoHS compliance www.onsemi.com VDSS RDS(on) Max ID Max 100 V 75 mΩ @ 10 V 31 A ELECTRICAL CONNECTION P-Channel Typical Applications  Reverse Battery Protection  Load Switch  Automotive Front Lighting  Automotive Body Controllers 2,4 1 1 : Gate 2 : Drain 3 : Source 4 : Drain SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW  10 s, duty cycle  1% Power Dissipation Tc=25C Operating Junction and Storage Temperature Symbol VDSS VGSS ID Value 100 20 31 IDP 124 A PD 84 W 55 to +175 C Tj, Tstg Avalanche Energy (Single Pulse) (Note 2) EAS 54 mJ Avalanche Current (Note 3) IAV 28 A Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : VDD = 30 V, L = 100 H, IAV = 28 A (Fig.1) 3 : L ≤ 100 H, Single pulse THERMAL RESISTANCE RATINGS Parameter Symbol Value 3 Unit V V A Unit Junction to Case Steady State (Tc = 25C) RJC 1.78 C/W Junction to Ambient (Note 4) RJA 79.3 C/W 4 1 2 3 ATPAK MARKING ATP301 LOT No. ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. 2 Note 4 : Surface mounted on FR4 board using a 130 mm , 1 oz. Cu pad © Semiconductor Components Industries, LLC, 2017 January 2017 - Rev. 0 1 Publication Order Number : NVATS68301PZ/D NVATS68301PZ ELECTRICAL CHARACTERISTICS at Ta  25C (Note 5) Conditions Value Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS IDSS ID = 1 mA, VGS = 0 V Zero-Gate Voltage Drain Current VDS = 100 V, VGS = 0 V 1 A Gate to Source Leakage Current IGSS VGS = 16 V, VDS = 0 V 10 A Gate Threshold Voltage VGS(th) VDS = 10 V, ID = 1 mA 3.5 V Forward Transconductance Static Drain to Source On-State Resistance Input Capacitance gFS VDS = 10 V, ID = 14 A 29 RDS(on) ID = 14 A, VGS = 10 V 57 Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd min typ max 100 Unit V 2.0 S 75 m 2,850 pF 270 pF Crss 125 pF td(on) 26 ns 150 ns 250 ns VDS = 20 V, f = 1 MHz See Fig.2 VDS = 60 V, VGS = 10 V, ID = 28 A 170 ns 55 nC 10 nC 17 nC VSD IS = 28 A, VGS = 0 V Forward Diode Voltage V 0.88 1.5 Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Unclamped Inductive Switching Test Circuit www.onsemi.com 2 Fig.2 Switching Time Test Circuit NVATS68301PZ --30 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 0 --5.0 25 °C 0 --1 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 180 160 140 120 100 Tc=75°C 80 25°C 60 --25°C 40 20 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 100 A 80 -10 =S VG 60 40 20 0 --25 --10 --100 125 150 175 Tc= 75° C 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Forward Diode Voltage, VSD -- V SW Time -- ID VDD= --60V VGS= --10V Ciss, Coss, Crss -- VDS 10000 f=1MHz td(off) Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 100 VGS=0V Single pulse Drain Current, ID -- A 1000 75 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 °C --1.0 50 IS -- VSD --100 7 5 3 2 Source Current, IS -- A Forward Transconductance, gFS -- S 5°C --2 1.0 0 --0.1 25 Case Temperature, Tc -- °C °C 25 75 --6 -14 =ID , V 0 --50 VDS= --10V Tc= --5 120 --10 gFS -- ID 10 --4 Single pulse Gate-to-Source Voltage, VGS -- V 100 --3 RDS(on) -- Tc 140 Single pulse ID= --14A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 --2 Gate-to-Source Voltage, VGS -- V Drain-to-Source Voltage, VDS -- V C --0.5 --25° 0 25°C 0 --10 °C --10 5°C --20 Tc= 7 VGS= --4.0V --40 --25 --1 0. 0V --4.5V --20 25°C --50 --40 --30 Single pulse VDS= --10V 75°C 0V . --6 V .0 --8 Drain Current, ID -- A Drain Current, ID -- A --50 ID -- VGS --60 Single pulse Tc=25°C Tc= --25° C ID -- VDS --60 tf 100 tr td(on) Ciss 1000 Coss Crss 10 --0.1 --1.0 --10 --100 100 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A www.onsemi.com 3 --30 NVATS68301PZ VGS -- Qg --10 --9 IDP= --124A (PW≤10μs) --100 --7 --6 --5 --4 --3 ID= --31A --10 Operation in this area is limited by RDS(on). --1.0 --1 0 10 20 30 40 50 --0.01 --0.1 60 --1.0 PD -- Tc 84 80 60 40 20 0 25 50 75 100 125 150 Case Temperature, Tc -- °C 10 --100 EAS -- Ta 120 Avalanche Energy Derating Factor, % 100 --10 Drain-to-Source Voltage, VDS -- V Total Gate Charge, Qg -- nC Power Dissipation, PD -- W 10μ s μs Tc=25°C Single pulse 0 Thermal Resistance, RθJC -- ºC/W 1m 100 10ms s ms --0.1 --2 0 100 n tio era op Drain Current, ID -- A --8 DC Gate-to-Source Voltage, VGS -- V SOA --1000 VDS= --60V ID= --28A 175 100 80 60 40 20 0 200 0 25 50 75 100 125 150 175 200 Ambient Temperature, Ta -- °C RθJC -- Pulse Time RθJC=1.78ºC/W 1.0 Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.01 0.02 lse e Pu l Sing 0.01 0.00001 0.0001 0.001 0.01 Pulse Time, PT -- s www.onsemi.com 4 0.1 1.0 10 NVATS68301PZ PACKAGE DIMENSIONS unit : mm DPAK (Single Gauge) / ATPAK CASE 369AM ISSUE O 4 2 3 RECOMMENDED SOLDERING FOOTPRINT 6.5 2 : Drain 6.7 1 : Gate 3 : Source 4 : Drain 2 1.5 1.6 1 2.3 www.onsemi.com 5 2.3 NVATS68301PZ ORDERING INFORMATION Device NVATS68301PZT4G Marking Package Shipping (Qty / Packing) ATP301 DPAK(Single Gauge) / ATPAK (Pb-Free / Halogen Free) 3,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the NVATS68301PZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 6