NVMTS1D2N08H

MOSFET - Power, Single N-Channel 80 V, 1.1 mW, 337 A NVMTS1D2N08H Features • • • • • www.onsemi.com Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 80 V 1.1 mW @ 10 V 337 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State Pulsed Drain Current Value Unit VDSS 80 V VGS ±20 V ID 337 A TC = 100°C TC = 25°C Steady State PD ID N−CHANNEL MOSFET A 43.5 PD W 5 2.5 IDM 900 A TJ, Tstg −55 to + 175 °C IS 250 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 28.9 A) EAS 3170 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Range Source Current (Body Diode) S (2−4) 30.8 TA = 100°C TA = 25°C, tp = 10 ms G (1) W 300 150 TA = 100°C TA = 25°C D (5−8) 238 TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1, 2) Symbol DFNW8 CASE 507AP MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1D2N08H AWLYWW THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case − Steady State Parameter RqJC 0.5 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 30 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. A WL Y WW = Assembly Location = 2−digit Wafer Lot Code = Year Code = Work Week Code ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2018 May, 2020 − Rev. 1 1 Publication Order Number: NVMTS1D2N08H/D NVMTS1D2N08H ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 80 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 57 VGS = 0 V, VDS = 80 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 590 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 2.0 2.9 4.0 −7.6 VGS = 10 V gFS ID = 90 A VDS =15 V, ID = 90 A 0.93 V mV/°C 1.1 400 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS 10100 Output Capacitance COSS Reverse Transfer Capacitance CRSS 43 Total Gate Charge QG(TOT) 147 Threshold Gate Charge QG(TH) 27 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 32 Plateau Voltage VGP 4 td(ON) 29 VGS = 0 V, f = 500 kHz, VDS = 40 V VGS = 10 V, VDS = 64 V; ID = 90 A 1455 pF nC 41 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 64 V, ID = 90 A, RG = 2.5 W tf 14 ns 66 19 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 90 A TJ = 25°C 0.8 TJ = 125°C 0.6 VGS = 0 V, dIS/dt = 100 A/ms, IS = 90 A 1.2 V 84 ns 189 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMTS1D2N08H TYPICAL CHARACTERISTICS 250 5.0 V 10 V to 6 V 200 150 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 250 VGS = 4.5 V 100 50 VDS = 5 V 200 150 TJ = 25°C 100 50 4.0 V 1 0 3 2 4 0 5 RDS(on), ON−RESISTANCE (mW) 10 5 5 4 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 6 1.5 VGS = 10 V 1.0 0.5 10 60 110 160 210 ID, DRAIN CURRENT (A) Figure 4.On−Resistance vs. Drain Current and Gate Voltage 2.6 1E+00 VGS = 10 V ID = 90 A 2.0 1.8 1.6 1.4 1.2 1.0 IDSS, REVERSE LEAKAGE CURRENT (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 5 2.0 Figure 3.On−Resistance vs. Gate−to−Source Voltage 2.2 4 Figure 2.Transfer Characteristics 15 2.4 3 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 90 A 3 2 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 20 0 TJ = 175°C Figure 1.On−Region Characteristics RDS(on), DRAIN−TO−SOURCE ON−RESISTANCE 0 TJ = 175°C 1E−01 TJ = 150°C TJ = 125°C 1E−02 TJ = 100°C 1E−03 TJ = 85°C 1E−04 TJ = 55°C TJ = 25°C 1E−05 0.8 0.6 −75 −50 −25 0 25 50 75 100 125 150 175 1E−06 5 15 25 35 45 55 65 75 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5.On−Resistance Variation with Temperature Figure 6.Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NVMTS1D2N08H TYPICAL CHARACTERISTICS CISS 10K C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) 100K COSS 1K 100 CRSS VGS = 0 V f = 500 kHz 10 0.1 1 10 4 TJ = 25°C ID = 90 A VDS = 64 V 2 0 0 20 40 60 80 td(off) td(on) tr 10 15 20 25 30 35 40 45 50 250 100 160 VGS = 0 V 0.1 TJ = 175°C 0.01 0.001 TJ = 25°C 0 0.2 0.4 TJ = −55°C 0.6 0.8 1.0 RG, GATE RESISTANCE (W) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 9.Resistive Switching Time Variation vs. Gate Resistance Figure 10.Diode Forward Voltage vs. Current 200 100 TJ(initial) = 25°C 10 ms 100 ms TC = 25°C Single Pulse RqJC = 0.5°C/W 1 TJ(initial) = 100°C 10 1 ms 10 ms 100 ms/ DC RDS(on) Limit Thermal Limit 0.1 IPEAK (A) 100 0.1 140 1 1000 1 120 10 5000 10 100 Figure 8.Gate−to−Source Voltage vs. Total Charge IS, REVERSE DRAIN CURRENT (A) t, SWITCHING TIME (ns) QGD Figure 7.Capacitance Variation 100 ID, DRAIN CURRENT(A) QGS QG, TOTAL GATE CHARGE (nC) tf 5 6 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS = 10 V VDS = 64 V ID = 90 A 0 QG(tot) 8 80 1000 10 10 10 100 1 300 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (s) Figure 11.Maximum Rated Forward Biased Safe Operating Area Figure 12.Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NVMTS1D2N08H TYPICAL CHARACTERISTICS 100 Duty Cycle = 0.5 R(t) (°C/W) 10 0.2 0.1 0.05 1 0.02 0.1 0.01 0.01 0.001 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 1 0.1 10 100 1000 TIME (s) Figure 13.Transient Thermal Impedance DEVICE ORDERING INFORMATION Device NVMTS1D2N08H Marking Package Shipping† NVMTS1D2N08H POWER 88 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TDFNW8 8.3x8.4, 2.0P, SINGLE COOL CASE 507AP ISSUE D DATE 29 MAR 2021 GENERIC MARKING DIAGRAM* XXXX A WL Y WW = Specific Device Code = Assembly Location = Wafer Lot Code = Year Code = Work Week Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON80534G Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TDFNW8 8.3x8.4, 2.0P, SINGLE COOL PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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