P2N2907AG

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Other names and brands may be claimed as the property of others. P2N2907A Amplifier Transistor PNP Silicon Features • These are Pb--Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector--Emitter Voltage VCEO --60 Vdc Collector--Base Voltage VCBO --60 Vdc Emitter--Base Voltage VEBO --5.0 Vdc Collector Current -- Continuous IC --600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg --55 to +150 °C Operating and Storage Junction Temperature Range 2 BASE 3 EMITTER TO--92 CASE 29 STYLE 17 1 12 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 200 °C/W Thermal Resistance, Junction to Case RθJC 83.3 °C/W 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. P2N2 907A AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb--Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† P2N2907AG TO--92 (Pb--Free) 5000 Units / Bulk P2N2907ARL1G TO--92 (Pb--Free) 2000 / Tape & Reel Device *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 April, 2007 -- Rev. 6 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: P2N2907A/D P2N2907A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max Unit --60 -- --60 -- --5.0 -- -- --50 --- --0.01 --10 -- --10 -- --10 -- --50 75 100 100 100 50 ---300 -- --- --0.4 --1.6 --- --1.3 --2.6 200 -- -- 8.0 -- 30 ton -- 50 ns td -- 10 ns tr -- 40 ns toff -- 110 ns ts -- 80 ns tf -- 30 ns OFF CHARACTERISTICS Collector--Emitter Breakdown Voltage (Note 1) (IC = --10 mAdc, IB = 0) V(BR)CEO Collector--Base Breakdown Voltage (IC = --10 mAdc, IE = 0) V(BR)CBO Emitter--Base Breakdown Voltage (IE = --10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = --30 Vdc, VEB(off) = --0.5 Vdc) ICEX Collector Cutoff Current (VCB = --50 Vdc, IE = 0) (VCB = --50 Vdc, IE = 0, TA = 150°C) ICBO Emitter Cutoff Current (VEB = --3.0 Vdc) IEBO Collector Cutoff Current (VCE = --10 V) ICEO Base Cutoff Current (VCE = --30 Vdc, VEB(off) = --0.5 Vdc) IBEX Vdc Vdc Vdc nAdc mAdc nAdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = --0.1 mAdc, VCE = --10 Vdc) (IC = --1.0 mAdc, VCE = --10 Vdc) (IC = --10 mAdc, VCE = --10 Vdc) (IC = --150 mAdc, VCE = --10 Vdc) (Note 1) (IC = --500 mAdc, VCE = --10 Vdc) (Note 1) hFE Collector--Emitter Saturation Voltage (Note 1) (IC = --150 mAdc, IB = --15 mAdc) (IC = --500 mAdc, IB = --50 mAdc) VCE(sat) Base--Emitter Saturation Voltage (Note 1) (IC = --150 mAdc, IB = --15 mAdc) (IC = --500 mAdc, IB = --50 mAdc) VBE(sat) -- Vdc Vdc SMALL--SIGNAL CHARACTERISTICS Current--Gain -- Bandwidth Product (Notes 1 and 2) (IC = --50 mAdc, VCE = --20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = --10 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = --2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo MHz pF pF SWITCHING CHARACTERISTICS Turn--On Time Delay Time Rise Time (VCC = --30 Vdc, IC = --150 mAdc, IB1 = --15 mAdc) (Figures 1 and 5) Turn--Off Time Storage Time Fall Time (VCC = --6.0 Vdc, IC = --150 mAdc, IB1 = IB2 = --15 mAdc) (Figure 2) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. http://onsemi.com 2 P2N2907A INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns 200 1.0 k 0 50 --16 V INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns --30 V TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns +15 V --6.0 V 1.0 k 1.0 k 0 --30 V 50 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1N916 200 ns 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit http://onsemi.com 3 P2N2907A TYPICAL CHARACTERISTICS hFE , NORMALIZED CURRENT GAIN 3.0 VCE = --1.0 V VCE = --10 V 2.0 TJ = 125°C 25°C 1.0 --55°C 0.7 0.5 0.3 0.2 --0.1 --0.2 --0.3 --0.5 --0.7 --1.0 --2.0 --3.0 --5.0 --7.0 --10 --20 --30 --50 --70 --100 --200 --300 --500 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR--EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain --1.0 --0.8 IC = --1.0 mA --10 mA --100 mA --500 mA --0.6 --0.4 --0.2 0 --0.005 --0.01 --0.02 --0.03 --0.05 --0.07 --0.1 --0.2 --0.3 --0.5 --0.7 --1.0 --2.0 --3.0 --5.0 --7.0 --10 --20 --30 --50 IB, BASE CURRENT (mA) Figure 4. Collector Saturation Region 500 tr 100 70 50 300 VCC = --30 V IC/IB = 10 TJ = 25°C 200 t, TIME (ns) t, TIME (ns) 300 200 30 20 td @ VBE(off) = 0 V 3.0 --5.0 --7.0 --10 30 10 7.0 5.0 --5.0 --7.0 --10 2.0 V --20 --30 --50 --70 --100 IC, COLLECTOR CURRENT tf 100 70 50 t′s = ts -- 1/8 tf 20 10 7.0 5.0 VCC = --30 V IC/IB = 10 IB1 = IB2 TJ = 25°C --200 --300 --500 Figure 5. Turn--On Time --20 --30 --50 --70 --100 --200 --300 --500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn--Off Time http://onsemi.com 4 P2N2907A TYPICAL SMALL--SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C 10 10 8.0 8.0 NF, NOISE FIGURE (dB) IC = --1.0 mA, Rs = 430 Ω --500 mA, Rs = 560 Ω --50 mA, Rs = 2.7 kΩ --100 mA, Rs = 1.6 kΩ 6.0 4.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 20 C, CAPACITANCE (pF) IC = --50 mA --100 mA --500 mA --1.0 mA 4.0 0 100 30 Ceb 10 7.0 5.0 Ccb 3.0 2.0 --0.1 6.0 2.0 f T, CURRENT--GAIN — BANDWIDTH PRODUCT (MHz) NF, NOISE FIGURE (dB) f = 1.0 kHz --0.2 --0.3 --0.5 --1.0 --2.0 --3.0 --5.0 --10 --20 --30 50 k 400 300 200 100 80 VCE = --20 V TJ = 25°C 60 40 30 20 --1.0 --2.0 --5.0 --10 --20 --50 --100 --200 --500 --1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current--Gain -- Bandwidth Product +0.5 --1.0 V, VOLTAGE (VOLTS) --0.6 0 VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ ° C) TJ = 25°C --0.8 VBE(on) @ VCE = --10 V --0.4 --0.2 --0.5 --1.0 --2.0 --5.0 --10 --20 --0.5 --1.0 --1.5 RθVB for VBE --2.0 VCE(sat) @ IC/IB = 10 0 --0.1 --0.2 RθVC for VCE(sat) --50 --100 --200 --2.5 --0.1 --0.2 --0.5 --1.0 --2.0 --500 --5.0 --10 --20 --50 --100 --200 --500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. “On” Voltage Figure 12. Temperature Coefficients http://onsemi.com 5 P2N2907A PACKAGE DIMENSIONS TO--92 (TO--226) CASE 29--11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C 1 SECTION X--X N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 -----0.250 -----0.080 0.105 -----0.100 0.115 -----0.135 ------ MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 -----6.35 -----2.04 2.66 -----2.54 2.93 -----3.43 ------ N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X--X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 -----2.04 2.66 1.50 4.00 2.93 -----3.43 -----STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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