BD237

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR (NPN) TO-126 FEATURES Complement to BD234/236/238 respectively MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage BD233 BD235 BD237 BD233 BD235 BD237 VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current –Continuous PC Collector Dissipation PC RΘJA Collector Dissipation RΘJC 1. EMITTER Value Unit 45 60 100 45 60 80 5 V V 2 A 3. BASE V 1.25 W 25 W Thermal Resistance from Junction to Ambient 100 ℃/W Thermal Resistance from Junction to Case 5 150 ℃/W TJ Junction Temperature Tstg Storage Temperature (Tc=25 ℃ ) 2. COLLECTOR ℃ -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol conditions V(BR)CBO IC= 1mA, IE=0 100 BD233 45 V(BR)CEO IC= 100mA, IB=0 V(BR)EBO ICBO 60 V IE= 1mA, IC=0 5 V VCB= 60V, IE=0 100 µA 1 mA 0.6 V VCB= 100V, IE=0 BD237 Emitter cut-off current V VCB= 45V, IE=0 BD233 BD235 Unit 80 BD237 Emitter-base breakdown voltage Max 60 BD237 BD235 Collector cut-off current Min 45 BD233 BD235 Collector-emitter breakdown voltage Test IEBO VEB= 5V, IC=0 HFE(1) VCE= 2V, IC=150mA 40 HFE(2) VCE=2V, IC= 1A 25 VCE(sat) IC=1A, IB= 100m A DC current gain Collector-emitter saturation voltage Transition frequency www.cj-elec.com fT 1 VCE=10V, Ic=250mA f =10MHz 3 MHz D,Oct,2014 Typical Characteristics Static Characteristic 0.7 0.6 o Ta=100 C 250 hFE (A) 2.7mA 2.4mA DC CURRENT GAIN IC COLLECTOR CURRENT VCE= 2V COMMON EMITTER Ta=25℃ 3.0mA 0.5 hFE —— IC 300 2.1mA 0.4 1.8mA 1.5mA 0.3 1.2mA 0.2 200 150 o Ta=25 C 100 0.9mA 0.6mA 0.1 50 IB=0.3mA 0.0 0 1 2 3 4 5 6 COLLECTOR-EMITTER VOLTAGE VCE 7 0 0.01 8 VBEsat —— IC 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat —— 300 β=10 800 Ta=25℃ 600 400 0.1 COLLECTOR CURRENT (V) Ta=100℃ IC 1 (A) 2 IC β=10 200 100 Ta=100℃ 200 Ta=25℃ 0 1E-4 1E-3 0.01 0.1 COLLECTOR CURRENT IC —— IC 1 0 1E-4 2 VBE Pc 1.50 0.1 —— IC 1 2 (A) Ta COLLECTOR POWER DISSIPATION Pc (W) IC (A) VCE=2V o Ta=100 C 0.1 COLLECTOR CURRENT 0.01 COLLECTOR CURRENT 2 1 1E-3 (A) 0.01 Ta=25℃ 1E-3 1.25 1.00 0.75 0.50 0.25 1E-4 200 0.00 300 400 500 600 700 BASE-EMITTER VOLTAGE www.cj-elec.com 800 900 1000 0 25 50 75 AMBIENT TEMPERATURE VBE(mV) 2 100 Ta 125 150 (℃ ) D,Oct,2014 TO-126 Package Outline Dimensions Symbol A A1 b b1 c D E e e1 h L L1 P Φ www.cj-elec.com Dimensions In Millimeters Min Max 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290 TYP 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 3 Dimensions In Inches Min Max 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 0.090 TYP 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 D,Oct,2014