MMBT3906W

DATA SHEET MMBT3906W PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .087(2.2) .070(1.8) .054(1.35) .045(1.15) .004(.10)MIN. .087(2.2) .078(2.0) 40 Volts POWER 150 mWatts SOT-323 Unit: inch (mm) MECHANICAL DATA Case: SOT-323, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Approx. Weight: 0.0052 gram Marking: S2A Top View 3 Collector 1 BASE 3 COLLECTOR .056(1.40) .047(1.20) .006(.15) .002(.05) .004(.10)MAX. .016(.40) .078(.20) 1 Base 2 Emitter 2 EMITTER ABSOLUTE RATINGS PA R A M E TE R C ol ct r-E m it rVolage lo e te t C ol ct r-B ase Volage lo e t E m it r-B ase Volage te t C ol ct rC urent-C ontnuous lo e r i S ym bol V C EO V C BO V EBO IC Val e u -0 4 -0 4 -5.0 - 00 2 U nis t V V V mA THERMAL CHARACTERISTICS PARAMETER Max Power Dissipation (Note 1) Thermal Resistance , Junction to Ambient Junction Temperature Storage Temperature Symbol PTOT RθJA TJ TISTG Value 150 833 -55 to 150 -55 to 150 Units mW O .044(1.1) .035(0.9) C/W O C C O Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. STAD-JUL.06.2004 PAGE . 1 ELECTRICAL CHARACTERISTICS P A R A M E TE R C o le ct r - E m i t r B re a kd o w n V o l a g e lo te t C o le ct r - B a se B re a kd o w n V o l a g e lo t E m i t r - B a se B re a kd o w n V o l a g e te t B a se C ut f C urre nt of C o le ct r C ut f C urre nt lo of S ym b o l V (B R )C E O V (B R )C B O V (B R )E B O IL B I EX C Te st C o nd i i n to I = -1 . m A , I = 0 C 0 B I = -1 0 uA , I = 0 C E I = -1 0 uA , I = 0 E C V C E = -3 0 V , V E B = -3 . V 0 V C E = -3 0 V , V E B = -3 . V 0 I = -0 . m A , V C E = -1 . V C 1 0 I = -1 . m A , V C E = -1 . V C 0 0 C 0 I = -1 0 m A , V C E = -1 . V I = -5 0 m A , V C E = -1 . V C 0 C 0 I = -1 0 0 m A , V C E = -1 . V I = -1 0 m A , I = -1 . m A C B 0 I = -5 0 m A , I = -5 . m A C B 0 I = -1 0 m A , I = -1 . m A C B 0 C B 0 I = -5 0 m A , I = -5 . m A V C B = -5 V , I = 0 , f 1 M H z E = V C B = -0 . V , I = 0 , f 1 M H z 5 C = V C C = -3 V , B E = -0 . V , V 5 C I 0 I = -1 0 m A , B = -1 . m A V C C = -3 V , B E = -0 . V , V 5 I = -1 0 m A , B = -1 . m A C I 0 V C C = -3 V , C = -1 0 m A I B B 0 I 1 = I 2 = -1 . m A V C C = -3 V , C = -1 0 m A I I 1 = I 2 = -1 . m A B B 0 MI . N -4 0 -4 0 -5 . 0 60 80 100 60 30 -0 . 5 6 TYP. M AX. -5 0 -5 0 300 -0 . 5 2 -0 . 4 -0 . 5 8 -0 . 5 9 4. 5 10 35 35 225 75 U ni s t V V V nA nA D C C urre nt G a i (N o t 2 ) n e hF E - C o le ct r - E m i t r S a t ra t o n V o l a g e lo te ui t (N o t 2 ) e B a se - E m i t r S a t ra t o n V o l a g e te ui t (N o t 2 ) e C o le ct r - B a se C a p a ci a nce lo t E m i t r - B a se C a p a ci a nce te t D e l y Ti e a m R i e Ti e s m S t ra g e Ti e o m F a l Ti e lm V C E (S A T) V B E (S A T) C CBO C EBO t d t r t s t f V V pF pF ns ns ns ns Note 2: Pulse Test: Pulse Width < 3 00 us, Duty Cycle < 2 .0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS 3V 27 5 Ω < 1ns 10K Ω CS* < 4pF 1N916 0 0 .5V -1 0.9 V 30 0 n s D u ty C yc le ~ 2 .0% D e la y a n d R is e T im e E q u iv a le n t T e s t C irc u it 3V 275 Ω < 1ns +9.1V 0 10K Ω C S * < 4pF C S * < 4pF 1N916 -10.9V 10 to 500us Duty Cycle ~ 2.0% S torage and Fall Time Equivalent Test Circuit STAD-JUL.06.2004 PAGE . 2 ELECTRICAL CHARACTERISTICS CURVE 300 TJ = 150˚ C 250 1.0 1.2 VCE = 1V 200 hFE TJ = 100˚ C -VBE (V) 0.8 TJ = 25˚ C 0.6 TJ = 100˚ C 0.4 TJ = 150˚ C 150 TJ = 25˚ C 100 50 VCE = 1V 0 0.01 0.2 0.1 1 10 100 1000 0.0 0.01 0.1 1 10 100 1000 Collector Current, -IC (mA) Fig. 1. Typical hFE vs. Collector Current 1.00 IC/IB = 10 Fig. 2. Typical VBE vs. Collector Current 1.000 TJ = 25˚ C Collector Current, -IC (mA) TJ = 100˚ -VCE(sat) (V) 0.10 TJ = 150˚ TJ = 25˚ -VBE(sat) (V TJ = 150˚ C IC/IB = 10 0.01 0.01 0.1 1 10 100 1000 0.100 0.01 0.1 1 10 100 Collector Current, -IC (mA) Fig. 3. Typical VCE (sat) vs. Collector Current 10 Fig. 4. Typical VBE (sat) vs. Collector Current Collector Current, -I C (mA) CIB (EB) Capacitance (pF) COB (CB) 1 -0.1 -1 Reverse Voltage, V -10 R -100 (V) Fig. 5. Typical Capacitances vs. Reverse Voltage STAD-JUL.06.2004 PAGE . 3 MOUNTING PAD LAYOUT SOT-323 Unit: inch (mm) 0.035(0.9) 0.025(0.65) 0.028(0.7) ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3.0K per 7" plastic Reel LEGAL STATEMENT IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. The information will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and product characterization are constantly in process. Therefore, the factory should be consulted for the most recent information and for any special characteristics not described or specified. Copyright Pan Jit International Inc. 2003 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract. The information presented is believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. STAD-JUL.06.2004 0.075(1.9) PAGE . 4