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840004BGI-01LFT

840004BGI-01LFT

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    TSSOP-20

  • 描述:

    IC FREQ SYNTHESIZER 20TSSOP

  • 数据手册
  • 价格&库存
840004BGI-01LFT 数据手册
FemtoClock® Crystal-to-LVCMOS/ LVTTL Frequency Synthesizer 840004I-01 Datasheet General Description Features The 840004I-01 is a 4 output LVCMOS/LVTTL Synthesizer optimized to generate Ethernet reference clock frequencies. Using a 25MHz, 18pF parallel resonant crystal, the following frequencies can be generated based on the 2 frequency select pins (F_SEL1:0): 156.25MHz, 125MHz, and 62.5MHz. The 840004I-01 uses IDT’s 3rd generation low phase noise VCO technology and can achieve 1ps or lower typical random rms phase jitter, easily meeting Ethernet jitter requirements. The 840004I-01 is packaged in a small 20-pin TSSOP package. • Four single-ended LVCMOS/LVTTL outputs 17 typical output impedance • Selectable crystal oscillator interface or single-ended input, Supports the following output frequencies: 156.25MHz, 125MHz and 62.5MHz • • VCO range: 560MHz - 700MHz • Output supply modes: Core/Output 3.3V/3.3V 3.3V/2.5V 2.5V/2.5V • • • -40°C to 85°C ambient operating temperature RMS phase jitter at 156.25MHz (1.875MHz – 20MHz): 0.52ps (typical) Available in lead-free (RoHS 6) package For functional replacement part use 8T49N241 Frequency Select Function Table for Ethernet Frequencies Inputs F_SEL1 F_SEL0 M Div. Value N Div. Value M/N Ratio Value Output Frequency (MHz), (25MHz Reference) 0 0 25 4 6.25 156.25 0 1 25 5 5 125 1 0 25 10 2.5 62.5 1 1 25 5 5 125 (default) Pin Assignment Block Diagram OE F_SEL1:0 Pullup nPLL_SEL Pulldown nXTAL_SEL Pulldown F_SEL0 nc nXTAL_SEL REF_CLK 2 Pullup:Pullup 25MHz XTAL_IN OSC F_SEL1:0 0 1 XTAL_OUT REF_CLK Pulldown 1 Phase Detector VCO 0 00 01 10 11 N ÷4 ÷5 ÷10 ÷5 (default) Q0 Q1 Q2 M = ÷25 (fixed) MR Q3 OE MR nPLL_SEL VDDA nc VDD 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 F_SEL1 GND Q0 Q1 VDDO Q2 Q3 GND XTAL_IN XTAL_OUT 840004I-01 20-Lead TSSOP 6.5mm x 4.4mm x 0.925mm package body G Package Top View Pulldown ©2016 Integrated Device Technology, Inc. 1 Revision D, November 7, 2016 840004I-01 Datasheet Table 1. Pin Descriptions Number Name 1, 20 F_SEL0, F_SEL1 Type Description Input 2, 9 nc Unused 3 nXTAL_SEL Input Pulldown Selects between the crystal or REF_CLK inputs as the PLL reference source. When HIGH, selects REF_CLK. When LOW, selects XTAL inputs. LVCMOS/LVTTL interface levels. 4 REF_CLK Input Pulldown Single-ended reference clock input. LVCMOS/LVTTL interface levels. 5 OE Input Pullup Output enable pin. When HIGH, the outputs are active. When LOW, the outputs are in a high impedance state. LVCMOS/LVTTL interface levels. 6 MR Input Pulldown Active HIGH master reset. When logic HIGH, the internal dividers are reset causing the outputs to go low. When logic LOW, the internal dividers and the outputs are enabled. LVCMOS/LVTTL interface levels. 7 nPLL_SEL Input Pulldown PLL bypass. When LOW, the output is driven from the VCO output. When HIGH, the PLL is bypassed and the output frequency = reference clock frequency/N output divider. LVCMOS/LVTTL interface levels. 8 VDDA Power Analog supply pin. Core supply pin. Pullup Frequency select pins. LVCMOS/LVTTL interface levels. No connect. 10 VDD Power 11, 12 XTAL_OUT, XTAL_IN Input 13, 19 GND Power Power supply ground. 14, 15, 17, 18 Q3, Q2, Q1, Q0 Output Single-ended clock outputs. 17 typical output impedance. LVCMOS/ LVTTL interface levels. 16 VDDO Power Output supply pin. Crystal oscillator interface. XTAL_IN is the input. XTAL_OUT is the output. NOTE: Pullup and Pulldown refer to internal input resistors. See Table 2, Pin Characteristics, for typical values. Table 2. Pin Characteristics Symbol Parameter Test Conditions CIN Input Capacitance 4 pF CPD Power Dissipation Capacitance 8 pF RPULLUP Input Pullup Resistor 51 k 51 k VDDO = 3.3V±5% 17  VDDO = 2.5V±5% 21  RPULLDOWN Input Pulldown Resistor ROUT Output Impedance ©2016 Integrated Device Technology, Inc. 2 Minimum Typical Maximum Units Revision D, November 7, 2016 840004I-01 Datasheet Absolute Maximum Ratings NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability. Item Rating Supply Voltage, VDD 4.6V Inputs, VI -0.5V to VDD + 0.5V Outputs, VO -0.5V to VDDO + 0.5V Package Thermal Impedance, JA 73.2C/W (0 lfpm) Storage Temperature, TSTG -65C to 150C DC Electrical Characteristics Table 3A. Power Supply DC Characteristics, VDD = 3.3V ± 5%, VDDO = 3.3V ± 5% or 2.5V ± 5%, TA = -40°C to 85°C Symbol Parameter VDD Test Conditions Minimum Typical Maximum Units Core Supply Voltage 3.135 3.3 3.465 V VDDA Analog Supply Voltage 3.135 3.3 3.465 V 3.135 3.3 3.465 V VDDO Output Supply Voltage 2.375 2.5 2.625 V IDD Power Supply Current 100 mA IDDA Analog Supply Current 12 mA IDDO Output Supply Current 10 mA Table 3B. Power Supply DC Characteristics, VDD = 2.5V ± 5%, VDDO = 2.5V ± 5%, TA = -40°C to 85°C Symbol Parameter VDD Minimum Typical Maximum Units Core Supply Voltage 2.375 2.5 2.625 V VDDA Analog Supply Voltage 2.375 2.5 2.625 V VDDO Output Supply Voltage 2.375 2.5 2.625 V IDD Power Supply Current 95 mA IDDA Analog Supply Current 12 mA IDDO Output Supply Current 8 mA ©2016 Integrated Device Technology, Inc. Test Conditions 3 Revision D, November 7, 2016 840004I-01 Datasheet Table 3C. LVCMOS/LVTTL DC Characteristics, TA = -40°C to 85°C Symbol Parameter VIH Input High Voltage VIL Input Low Voltage IIH IIL Input High Current Input Low Current Test Conditions Minimum VDD = 3.465V Typical Maximum Units 2 VDD + 0.3 V VDD = 2.625V 1.7 VDD + 0.3 V VDD = 3.465V -0.3 0.8 V VDD = 2.625V -0.3 0.7 V nXTAL_SEL, nPLL_SEL, REF_CLK, MR VDD = VIN = 3.465V or 2.625V 150 µA OE, F_SEL[0:1] VDD = VIN = 3.465V or 2.625V 5 µA nXTAL_SEL, nPLL_SEL, REF_CLK, MR VDD = 3.465V or 2.625V, VIN = 0V -5 µA OE, F_SEL[0:1] VDD = 3.465V or 2.625V, VIN = 0V -150 µA VDDO = 3.3V ± 5% 2.6 V VDDO = 2.5V ± 5% 1.8 V VOH Output High Voltage; NOTE 1 VOL Output Low Voltage; NOTE 1 VDDO = 3.3V ± 5% or 2.5V ± 5% 0.5 V NOTE 1: Outputs terminated with 50 to VDDO/2. See Parameter Measurement Information section. Load Test Circuit diagrams. Table 4. Crystal Characteristics Parameter Test Conditions Mode of Oscillation Minimum Typical Maximum Units Fundamental Frequency 25 MHz Equivalent Series Resistance (ESR) 50  Shunt Capacitance 7 pF Drive Level 1 mW ©2016 Integrated Device Technology, Inc. 4 Revision D, November 7, 2016 840004I-01 Datasheet AC Electrical Characteristics Table 5A. AC Characteristics, VDD = VDDO = 3.3V ± 5%, TA = -40°C to 85°C Parameter fout tsk(o) tjit(Ø) Symbol Output Frequency Test Conditions Minimum Typical Maximum Units F_SEL[1:0] = 00 140 156.25 175 MHz F_SEL[1:0] = 01 or 11 112 125 140 MHz F_SEL[1:0] = 10 56 62.5 70 MHz 60 MHz Output Skew: NOTE 1, 2 RMS Phase Jitter (Random); NOTE 3 t R / tF Output Rise/Fall Time odc Output Duty Cycle 156.25MHz, Integration Range: 1.875MHz – 20MHz 0.52 ps 125MHz, Integration Range: 1.875MHz – 20MHz 0.65 ps 62.5MHz, Integration Range: 1.875MHz – 20MHz 0.55 ps 20% to 80% 250 750 ps F_SEL[1:0] = 00, 01 or 11 42 58 % F_SEL[1:0] = 10 49 51 % NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. NOTE 1: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at VDDO/2. NOTE 2: This parameter is defined in accordance with JEDEC Standard 65. NOTE 3: Please refer to the Phase Noise Plot. Table 5B. AC Characteristics, VDD = 3.3V ± 5%, VDDO = 2.5V ± 5%, TA = -40°C to 85°C Parameter fout tsk(o) tjit(Ø) Symbol Output Frequency Test Conditions Minimum Typical Maximum Units F_SEL[1:0] = 00 140 156.25 175 MHz F_SEL[1:0] = 01 or 11 112 125 140 MHz F_SEL[1:0] = 10 56 62.5 70 MHz 60 MHz Output Skew: NOTE 1, 2 RMS Phase Jitter (Random); NOTE 3 t R / tF Output Rise/Fall Time odc Output Duty Cycle 156.25MHz, Integration Range: 1.875MHz – 20MHz 0.48 ps 125MHz, Integration Range: 1.875MHz – 20MHz 0.59 ps 62.5MHz, Integration Range: 1.875MHz – 20MHz 0.53 ps 20% to 80% 250 750 ps F_SEL[1:0] = 00, 01 or 11 42 58 % F_SEL[1:0] = 10 49 51 % NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. NOTE 1: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at VDDO/2. NOTE 2: This parameter is defined in accordance with JEDEC Standard 65. NOTE 3: Please refer to the Phase Noise Plot. ©2016 Integrated Device Technology, Inc. 5 Revision D, November 7, 2016 840004I-01 Datasheet Table 5C. AC Characteristics, VDD = VDDO = 2.5V ± 5%, TA = -40°C to 85°C Parameter Symbol fout Output Frequency tsk(o) Output Skew: NOTE 1, 2 tjit(Ø) tR / tF odc RMS Phase Jitter (Random); NOTE 3 Output Rise/Fall Time Output Duty Cycle Test Conditions Minimum Typical Maximum Units F_SEL[1:0] = 00 140 156.25 175 MHz F_SEL[1:0] = 01 or 11 112 125 140 MHz F_SEL[1:0] = 10 56 62.5 70 MHz 60 MHz 156.25MHz, Integration Range: 1.875MHz – 20MHz 0.50 ps 125MHz, Integration Range: 1.875MHz – 20MHz 0.60 ps 62.5MHz, Integration Range: 1.875MHz – 20MHz 0.51 ps 20% to 80% 250 750 ps F_SEL[1:0] = 00, 01 or 11 42 58 % F_SEL[1:0] = 10 49 51 % NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. NOTE 1: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at VDDO/2. NOTE 2: This parameter is defined in accordance with JEDEC Standard 65. NOTE 3: Please refer to the Phase Noise Plot. ©2016 Integrated Device Technology, Inc. 6 Revision D, November 7, 2016 840004I-01 Datasheet ? Typical Phase Noise at 62.5MHz (3.3V) 10Gb Ethernet Filter Raw Phase Noise Data ? ? Noise Power dBc Hz 62.5MHz RMS Phase Jitter (Random) 1.875MHz to 20MHz = 0.55ps (typical) Phase Noise Result by adding a 10Gb Ethernet filter to raw data Offset Frequency (Hz) ? Typical Phase Noise at 62.5MHz (2.5V) 10Gb Ethernet Filter ? Noise Power dBc Hz 62.5MHz RMS Phase Jitter (Random) 1.875MHz to 20MHz = 0.53ps (typical) ? Raw Phase Noise Data Phase Noise Result by adding a 10Gb Ethernet filter to raw data Offset Frequency (Hz) ©2016 Integrated Device Technology, Inc. 7 Revision D, November 7, 2016 840004I-01 Datasheet ? Typical Phase Noise at 125MHz (3.3V) 10Gb Ethernet Filter Raw Phase Noise Data ? ? Noise Power dBc Hz 125MHz RMS Phase Jitter (Random) 1.875MHz to 20MHz = 0.65ps (typical) Phase Noise Result by adding a 10Gb Ethernet filter to raw data Offset Frequency (Hz) ? Typical Phase Noise at 125MHz (2.5V) 10Gb Ethernet Filter Raw Phase Noise Data ? ? Noise Power dBc Hz 125MHz RMS Phase Jitter (Random) 1.875MHz to 20MHz = 0.60ps (typical) Phase Noise Result by adding a 10Gb Ethernet filter to raw data Offset Frequency (Hz) ©2016 Integrated Device Technology, Inc. 8 Revision D, November 7, 2016 840004I-01 Datasheet ? Typical Phase Noise at 156.25MHz (3.3V) 10Gb Ethernet Filter Raw Phase Noise Data ? ? Noise Power dBc Hz 156.25MHz RMS Phase Jitter (Random) 1.875MHz to 20MHz = 0.52ps (typical) Phase Noise Result by adding a 10Gb Ethernet filter to raw data Offset Frequency (Hz) ? Typical Phase Noise at 156.25MHz (2.5V) 10Gb Ethernet Filter Raw Phase Noise Data ? ? Noise Power dBc Hz 156.25MHz RMS Phase Jitter (Random) 1.875MHz to 20MHz = 0.50ps (typical) Phase Noise Result by adding a 10Gb Ethernet filter to raw data Offset Frequency (Hz) ©2016 Integrated Device Technology, Inc. 9 Revision D, November 7, 2016 840004I-01 Datasheet Parameter Measurement Information 2.05V¬±5 1.65V¬±5 1.25V¬±5 1.65V¬±5 2.05V¬±5 SCOPE VDD, VDDO SCOPE VDD VDDA VDDO Qx Qx VDDA GND GND -1.65V¬±5 -1.25V¬±5 3.3V Core/3.3V LVCMOS Output Load AC Test Circuit 3.3V Core/2.5V LVCMOS Output Load AC Test Circuit 1.25V¬±5 Phase Noise Plot Noise Power 1.25V¬±5 SCOPE VDD, VDDO VDDA Qx Phase Noise Mask GND f1 Offset Frequency f2 RMS Jitter = Area Under the Masked Phase Noise Plot -1.25V¬±5 2.5V Core/2.5V LVCMOS Output Load AC Test Circuit RMS Phase Jitter V 80% DDO Qx Q0:Q3 V DDO Qy 80% 2 20% 20% tR tF 2 tsk(o) Output Skew ©2016 Integrated Device Technology, Inc. Output Rise/Fall Time 10 Revision D, November 7, 2016 840004I-01 Datasheet Parameter Measurement Information, continued V DDO 2 Q0:Q3 t PW t odc = PERIOD t PW x 100% t PERIOD Output Duty Cycle Pulse Width/Period ©2016 Integrated Device Technology, Inc. 11 Revision D, November 7, 2016 840004I-01 Datasheet Application Information Recommendations for Unused Input and Output Pins Inputs: Outputs: Crystal Inputs LVCMOS Outputs For applications not requiring the use of the crystal oscillator input, both XTAL_IN and XTAL_OUT can be left floating. Though not required, but for additional protection, a 1k resistor can be tied from XTAL_IN to ground. All unused LVCMOS outputs can be left floating. We recommend that there is no trace attached. REF_CLK Input For applications not requiring the use of the reference clock, it can be left floating. Though not required, but for additional protection, a 1k resistor can be tied from the REF_CLK to ground. LVCMOS Control Pins All control pins have internal pull-downs; additional resistance is not required but can be added for additional protection. A 1k resistor can be used. Power Supply Filtering Technique As in any high speed analog circuitry, the power supply pins are vulnerable to random noise. To achieve optimum jitter perfor- mance, power supply isolation is required. The 840004I-01 provides separate power supplies to isolate any high switching noise from the outputs to the internal PLL. VDD, VDDA and VDDO should be individually connected to the power supply plane through vias, and 0.01µF bypass capacitors should be used for each pin. Figure 1 illustrates this for a generic VDD pin and also shows that VDDA requires that an additional 10 resistor along with a 10F bypass capacitor be connected to the VDDA pin. ©2016 Integrated Device Technology, Inc. 3.3V VDD .01µF 10Ω .01µF 10µF VDDA Figure 1. Power Supply Filtering 12 Revision D, November 7, 2016 840004I-01 Datasheet Crystal Input Interface The 840004I-01 has been characterized with 18pF parallel resonant crystals. The capacitor values shown in Figure 2 below were determined using a 25MHz, 18pF parallel resonant crystal and were chosen to minimize the ppm error. XTAL_IN C1 22pF X1 18pF Parallel Crystal XTAL_OUT C2 22pF Figure 2. Crystal Input Interface LVCMOS to XTAL Interface The XTAL_IN input can accept a single-ended LVCMOS signal through an AC coupling capacitor. A general interface diagram is shown in Figure 3. The XTAL_OUT pin can be left floating. The input edge rate can be as slow as 10ns. For LVCMOS inputs, it is recommended that the amplitude be reduced from full swing to half swing in order to prevent signal interference with the power rail and to reduce noise. This configuration requires that the output VCC impedance of the driver (Ro) plus the series resistance (Rs) equals the transmission line impedance. In addition, matched termination at the crystal input will attenuate the signal in half. This can be done in one of two ways. First, R1 and R2 in parallel should equal the transmission line impedance. For most 50 applications, R1 and R2 can be 100. This can also be accomplished by removing R1 and making R2 50. VCC R1 Ro Rs 0.1µf 50Ω XTAL_IN Zo = Ro + Rs R2 XTAL_OUT Figure 3. General Diagram for LVCMOS Driver to XTAL Input Interface ©2016 Integrated Device Technology, Inc. 13 Revision D, November 7, 2016 840004I-01 Datasheet Schematic Example Figure 4 shows a schematic example of the 840004I-01. An example of LVCMOS termination is shown in this schematic. Additional LVCMOS termination approaches are shown in the LVCMOS Termination Application Note. In this example, an 18pF parallel resonant 25MHz crystal is used. The C1= 22pF and C2 = 22pF are recommended for frequency accuracy. For different board layouts, the C1 and C2 may be slightly adjusted for optimizing frequency accuracy. 1k pullup or pulldown resistors can be used for the logic control input pins. Logic Control Input Examples Set Logic Input to '1' VDD Set Logic Input to '0' VDD RU1 1K VDD=3.3V VDDO=3.3V RU2 Not Install To Logic Input pins R3 36 RD1 Not Install RD2 1K U1 VDDO VDD VDD VDDA R2 10 Zo = 50 Ohm To Logic Input pins C3 10uF VDD C4 0.01u 1 2 3 4 5 6 7 8 9 10 F_SEL0 nc nXTAL_SEL REF_CLK OE MR nPLL_SEL VDDA nc VDD F_SEL1 GND Q0 Q1 VDDO Q2 Q3 GND XTAL_IN XTAL_OUT LVCMOS 20 19 18 17 16 15 14 13 12 11 C6 0.1u VDD R5 100 Zo = 50 Ohm C5 0.1u 840004i_01 XTAL_OUT C2 22pF R4 100 LVCMOS X1 XTAL_IN If not using the crystal input, it can be left floating. For additional protection the XTAL_IN pin can be tied to ground. C1 22pF Optional Termination Unused outputs can be left floating. There should be no trace attached to unused outputs. Device characterized and specification limits set with all outputs terminated. Figure 4. P.C. 840004I-01 Schematic Example ©2016 Integrated Device Technology, Inc. 14 Revision D, November 7, 2016 840004I-01 Datasheet Reliability Information Table 6. JA vs. Air Flow Table for a 20 Lead TSSOP JA by Velocity Linear Feet per Minute 0 200 500 Single-Layer PCB, JEDEC Standard Test Boards 114.5°C/W 98.0°C/W 88.0°C/W Multi-Layer PCB, JEDEC Standard Test Boards 73.2°C/W 66.6°C/W 63.5°C/W NOTE: Most modern PCB designs use multi-layered boards. The data in the second row pertains to most designs. Transistor Count The transistor count for 840004I-01: 3796 Package Outline and Package Dimensions Package Outline - G Suffix for 20 Lead TSSOP Table 7. Package Dimensions for 20 Lead TSSOP All Dimensions in Millimeters Symbol Minimum Maximum N 20 A 1.20 A1 0.05 0.15 A2 0.80 1.05 b 0.19 0.30 c 0.09 0.20 D 6.40 6.60 E 6.40 Basic E1 4.30 4.50 e 0.65 Basic L 0.45 0.75  0° 8° aaa 0.10 Reference Document: JEDEC Publication 95, MO-153 ©2016 Integrated Device Technology, Inc. 15 Revision D, November 7, 2016 840004I-01 Datasheet Ordering Information Table 8. Ordering Information Part/Order Number Marking Package Shipping Packaging Temperature 840004BGI-01LF ICS0004BI01L 20 Lead “Lead-Free” TSSOP Tube -40°C to 85°C 840004BGI-01LFT ICS0004BI01L 20 Lead “Lead-Free” TSSOP Tape & Reel -40°C to 85°C NOTE: Parts that are ordered with an "LF" suffix to the part number are the Pb-Free configuration and are RoHS compliant. ©2016 Integrated Device Technology, Inc. 16 Revision D, November 7, 2016 Revision History Sheet Rev A B C C C D Table Page T8 15 T5A - T5B 4-5 Description of Change Date Ordering Information Table - corrected standard marking and added lead-free marking. 10/22/07 AC Characteristics Tables - revised Test Conditions for Output Duty Cycle. Updated format throughout datasheet. 10/30/08 Changed from ICS840004AGI-01 to ICS840004BGI-01 throughout. AC Characteristics - Changed Output Rise/Fall Time and Output Duty Cycle. AC Characteristics - Changed Output Rise/Fall Time and Output Duty Cycle. 2/9/09 T5A - T5B T5C 5 6 T8 16 Ordering Information - removed leaded devices. Updated data sheet format. 4/2/15 1 Product Discontinuation Notice - Last time buy expires November 2, 2016. PDN# CQ-15-05. 11/4/15 Obsolete datasheet per PDN# CQ-15-05. Updated datasheet header/footer. 11/7/16 Corporate Headquarters Sales Tech Support 6024 Silver Creek Valley Road San Jose, CA 95138 USA www.IDT.com 1-800-345-7015 or 408-284-8200 Fax: 408-284-2775 www.IDT.com/go/sales www.idt.com/go/support DISCLAIMER Integrated Device Technology, Inc. (IDT) reserves the right to modify the products and/or specifications described herein at any time, without notice, at IDT's sole discretion. Performance specifications and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT's products for any particular purpose, an implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties. IDT's products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT. Integrated Device Technology, IDT and the IDT logo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trademarks used herein are the property of IDT or their respective third party owners. For datasheet type definitions and a glossary of common terms, visit www.idt.com/go/glossary. Copyright ©2016 Integrated Device Technology, Inc. All rights reserved. IMPORTANT NOTICE AND DISCLAIMER RENESAS ELECTRONICS CORPORATION AND ITS SUBSIDIARIES (“RENESAS”) PROVIDES TECHNICAL SPECIFICATIONS AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS OR IMPLIED, INCLUDING, WITHOUT LIMITATION, ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. 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Renesas' products are provided only subject to Renesas' Terms and Conditions of Sale or other applicable terms agreed to in writing. No use of any Renesas resources expands or otherwise alters any applicable warranties or warranty disclaimers for these products. (Rev.1.0 Mar 2020) Corporate Headquarters Contact Information TOYOSU FORESIA, 3-2-24 Toyosu, Koto-ku, Tokyo 135-0061, Japan www.renesas.com For further information on a product, technology, the most up-to-date version of a document, or your nearest sales office, please visit: www.renesas.com/contact/ Trademarks Renesas and the Renesas logo are trademarks of Renesas Electronics Corporation. All trademarks and registered trademarks are the property of their respective owners. © 2020 Renesas Electronics Corporation. All rights reserved.
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