FL12KM-12A

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FL12KM-12A HIGH-SPEED SWITCHING USE FL12KM-12A OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 ➀➁➂ ➁ 2.6 ± 0.2 G 10V DRIVE G VDSS ............................................................................... 600V G rDS (ON) (MAX) .............................................................. 0.94Ω G ID ......................................................................................... 12A ➀ ➀ GATE ➁ DRAIN ➂ SOURCE ➂ TO-220FN APPLICATION SMPS, Inverter fluorescent light sets, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 600 ±30 12 36 12 40 –55 ~ +150 –55 ~ +150 2000 2.0 Unit V V A A A W °C °C V g Sep. 2001 L = 200µH AC for 1minute, Terminal to case Typical value MITSUBISHI Nch POWER MOSFET FL12KM-12A HIGH-SPEED SWITCHING USE (Tch = 25°C) ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Test conditions ID = 1mA, VGS = 0V IGS = ± 100µA, VDS = 0V VGS = ± 25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 6A, VGS = 10V ID = 6A, VGS = 10V ID = 6A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 600 ±30 — — 2.0 — — — — — — — — — — — — Typ. — — — 3.0 0.80 4.80 8.0 1250 150 55 25 45 250 90 1.5 — Max. — ±10 1 4.0 0.94 5.64 — — — — — — — — 2.0 3.13 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 6A, VGS = 10V, RGEN = RGS = 50Ω IS = 6A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 tw =10µs 40 101 7 5 3 2 100µs 1ms 10ms 30 20 100 7 5 3 2 10 10–1 TC = 25°C 0 0 50 100 150 200 7 5 Single Pulse DC 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20 TC = 25°C Pulse Test OUTPUT CHARACTERISTICS (TYPICAL) 10 TC = 25°C Pulse Test VGS = 20V 8 10V 6V DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID (A) 5V 12 VGS = 20V 10V 6V 5V 6 8 4 4 4V 2 4V 0 0 4 8 12 16 20 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FL12KM-12A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) TC = 25°C Pulse Test 16 16A 1.6 VGS = 10V 12 12A 1.2 20V 8 6A 0.8 4 0.4 0 0 4 8 12 16 20 00 10 2 3 5 7 101 2 3 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) 20 TC = 25°C VDS = 50V Pulse Test FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 101 7 5 TC = 25°C 75°C 125°C DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 16 3 2 12 100 7 5 3 2 VDS = 10V Pulse Test 2 3 5 7 101 2 3 5 7 102 8 4 0 0 4 8 12 16 20 10-1 100 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 TCh = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω td(off) tf tr SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) Ciss 3 2 103 7 5 3 2 Coss Crss 102 7 5 3 2 102 7 5 3 TCh = 25°C 2 f = 1MHZ VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 td(on) 101 101 0 10 2 3 5 7 101 2 3 5 7 102 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FL12KM-12A HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 SOURCE CURRENT IS (A) VGS = 0V Pulse Test 20 TCh = 25°C ID = 12A 16 16 TC = 25°C 75°C 125°C 12 12 8 4 VDS = 100V 200V 400V 8 4 0 0 20 40 60 80 100 0 0 1.0 2.0 3.0 4.0 5.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = 10V 7 ID = 6A 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) VDS = 10V ID = 1mA 4.0 3.0 100 7 5 3 2 2.0 1.0 10–1 –50 0 50 100 150 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 2 0.5 1.2 100 0.2 1.0 0.8 7 5 0.1 3 0.05 2 7 5 3 2 PDM tw 10–1 0.02 0.01 Single Pulse T D= tw T 0.6 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Sep. 2001 CHANNEL TEMPERATURE Tch (°C)