MITSUBISHI Nch POWER MOSFET
e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som
P
MIN RELI
ARY
FL12KM-12A
HIGH-SPEED SWITCHING USE
FL12KM-12A
OUTLINE DRAWING
10 ± 0.3
6.5 ± 0.3 3 ± 0.3
Dimensions in mm 2.8 ± 0.2
15 ± 0.3
φ 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
4.5 ± 0.2
2.6 ± 0.2
q 10V DRIVE q VDSS ............................................................................... 600V q rDS (ON) (MAX) ............................................................. 0.94Ω q ID ......................................................................................... 12A
GATE DRAIN SOURCE
TO-220FN
APPLICATION Switch mode power supply, Inverter fluorescent lamp, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V
Conditions
Ratings 600 ±30 12 36 12 40 –55 ~ +150 –55 ~ +150 2000 2.0
Unit V V A A A W °C °C V g Sep.1998
L = 200µH
AC for 1minute, Terminal to case Typical value
MITSUBISHI Nch POWER MOSFET
e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som
P
MIN RELI
ARY
FL12KM-12A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 6A, VGS = 10V ID = 6A, VGS = 10V ID = 6A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 600 ±30 — — 2.0 — — — — — — — — — — — — Typ. — — — 3.0 0.80 4.80 8.0 1250 150 55 25 45 250 90 1.5 — Max. — ±10 1 4.0 0.94 5.64 — — — — — — — — 2.0 3.13
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W
Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 6A, VGS = 10V, RGEN = RGS = 50Ω
IS = 6A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA
5 3 2 tw =10µs
40
101
7 5 3 2 100µs 1ms 10ms
30
20
100
7 5 3 2
10
10–1 TC = 25°C 0 0 50 100 150 200
7 5
Single Pulse
DC
3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 20
TC = 25°C Pulse Test
OUTPUT CHARACTERISTICS (TYPICAL) 10
TC = 25°C Pulse Test VGS = 20V 8 10V 6V
DRAIN CURRENT ID (A)
16
DRAIN CURRENT ID (A)
5V
12
VGS = 20V 10V 6V 5V
6
8
4
4
4V
2
4V
0
0
4
8
12
16
20
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998
MITSUBISHI Nch POWER MOSFET
e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som
P
MIN RELI
ARY
FL12KM-12A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω)
TC = 25°C Pulse Test
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
TC = 25°C Pulse Test 16A
16
1.6
VGS = 10V
12
12A
1.2
20V
8
6A
0.8
4
0.4
0
0
4
8
12
16
20
00 10
2
3
5 7 101
2
3
5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS (TYPICAL) 20
TC = 25°C VDS = 50V Pulse Test
FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 101
7 5 TC = 25°C 75°C 125°C
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
16
3 2
12
100
7 5 3 2 VDS = 10V Pulse Test 2 3 5 7 101 2 3 5 7 102
8
4
0
0
4
8
12
16
20
10-1
100
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104
7 5 3 2
SWITCHING CHARACTERISTICS (TYPICAL) 103
7 5 TCh = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω td(off) tf tr
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
Ciss
3 2
103
7 5 3 2 Coss Crss
102
7 5 3 2
102
7 5 3 TCh = 25°C 2 f = 1MHZ VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2
td(on)
101
101 0 10
2
3
5 7 101
2
3
5 7 102
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A) Sep.1998
MITSUBISHI Nch POWER MOSFET
e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som
P
MIN RELI
ARY
FL12KM-12A
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20
SOURCE CURRENT IS (A)
VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
20
TCh = 25°C ID = 12A
16
16
TC = 25°C 75°C 125°C
12
12
8
4
VDS = 100V 200V 400V
8
4
0
0
20
40
60
80
100
0
0
1.0
2.0
3.0
4.0
5.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101
VGS = 10V 7 ID = 6A 5 Pulse Test 3 2
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
VDS = 10V ID = 1mA
4.0
3.0
100
7 5 3 2
2.0
1.0
10–1
–50
0
50
100
150
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101
7 5 D = 1.0 3 2 0.5
1.2
100 0.2
1.0
0.8
7 5 0.1 3 0.05 2 7 5 3 2
PDM
tw
10–1
0.02 0.01 Single Pulse
T D= tw T
0.6
0.4
–50
0
50
100
150
10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Sep.1998
CHANNEL TEMPERATURE Tch (°C)
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