To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
MITSUBISHI Nch POWER MOSFET
FY6ACJ-03A
HIGH-SPEED SWITCHING USE
FY6ACJ-03A
OUTLINE DRAWING
➇ ➄
Dimensions in mm
6.0 4.4
➀
5.0
➃
1.8 MAX.
0.4 1.27
➀ ➂ SOURCE ➁ ➃ GATE ➄ ➅ ➆ ➇ DRAIN ➆➇ ➄➅
➁
➃
G 4V DRIVE G VDSS .................................................................................. 30V G rDS (ON) (MAX) .............................................................. 23mΩ G ID ........................................................................................... 6A
➀
➂
SOP-8
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 30 ±20 6 42 6 1.7 6.8 1.8 –55 ~ +150 –55 ~ +150 0.07 Unit V V A A A A A W °C °C g Sep. 2001
L = 10µH
MITSUBISHI Nch POWER MOSFET
FY6ACJ-03A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 6A, VGS = 10V ID = 3A, VGS = 4V ID = 6A, VGS = 10V ID = 6A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 30 — — 1.0 — — — — — — — — — — — — — — Typ. — — — 1.5 17 26 102 12 1000 350 160 15 25 75 55 0.75 — 35 Max. — ±0.1 0.1 2.0 23 40 138 — — — — — — — — 1.10 69.4 — Unit V µA mA V mΩ mΩ mV S pF pF pF ns ns ns ns V °C/W ns
VDD = 15V, ID = 3A, VGS = 10V, RGEN = RGS = 50Ω
IS = 1.7A, VGS = 0V Channel to ambient IS = 1.7A, dis/dt = –50A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 2.0 MAXIMUM SAFE OPERATING AREA
2
POWER DISSIPATION PD (W)
102 1.6
DRAIN CURRENT ID (A)
7 5 3 2 7 5 3 2 7 5 3 2
tw = 100µs
101
1ms 10ms 100ms
1.2
0.8
100
0.4
10–1
7 5 3 2 TC = 2 5°C Single Pulse DC
0
0
50
100
150
200
2 3 57100 2 3 57101 2 3 57102 2 3 57103 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 50
VGS = 10V 8V 6V 5V TC = 25°C Pulse Test
OUTPUT CHARACTERISTICS (TYPICAL) 20
TC = 25°C Pulse Test VGS = 10V 8V 6V 5V 4V
DRAIN CURRENT ID (A)
40
DRAIN CURRENT ID (A)
4V
16
3V
30
12
20
3V
8
10
PD = 1.8W
4
PD = 1.8W
0
0
0.4
0.8
1.2
1.6
2.0
0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FY6ACJ-03A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.0
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
TC = 25°C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ)
TC = 25°C Pulse Test VGS = 4V
0.8
32
0.6
ID = 24A
24
10V
0.4
12A
16
0.2
6A 3A
8 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 50
TC = 25°C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102
VDS = 10V 7 Pulse Test 5 4 TC = 25°C 3 75°C 2 125°C
DRAIN CURRENT ID (A)
30
FORWARD TRANSFER ADMITTANCE yfs (S)
40
101
7 5 4 3 2
20
10
0
0
2
4
6
8
10
100 0 10
2
3 4 5 7 101
2
3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104
7 5 3 2
SWITCHING CHARACTERISTICS (TYPICAL) 102
7 5 4 3 2 td(off) tf tr td(on)
103
7 5 3 2
Ciss Coss Crss
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
101
7 5 4 3 2
102
7 5 3 TCh = 25°C 2 f = 1MHZ VGS = 0V
TCh = 25°C VDD = 15V VGS = 10V RGEN = RGS = 50Ω 2 3 4 5 7 101 2 3 4 5 7 102
101 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN-SOURCE VOLTAGE VDS (V)
100 0 10
DRAIN CURRENT ID (A) Sep. 2001
MITSUBISHI Nch POWER MOSFET
FY6ACJ-03A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50
SOURCE CURRENT IS (A)
VGS = 0V Pulse Test
10
TCh = 25°C ID = 6A VDS = 15V 20V 25V
8
40
6
30
TC = 125°C 75°C 25°C
4
20
2
10
0
0
4
8
12
16
20
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101
VGS = 10V 7 ID = 6A 5 Pulse Test 3 2
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
VDS = 10V ID = 1mA
3.2
2.4
100
7 5 3 2
1.6
0.8
10–1
–50
0
50
100
150
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch – a) (°C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102
7 5 D = 1.0 3 0.5 2
1.2
101 0.2
7 5 0.1 3 2 PDM
tw
1.0
0.8
100
7 5 3 2 0.05 0.02 0.01 Single Pulse
T D= tw T
0.6
0.4
–50
0
50
100
150
10–1 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s)
Sep. 2001
CHANNEL TEMPERATURE Tch (°C)
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