FY7BFH-02E

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET FY7BFH-02E FY7BFH-02E HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FY7BFH-02E OUTLINE DRAWING ➇ ➄ Dimensions in mm 6.4 4.4 ➀ 3.0 ➃ 1.1 0.275 0.65 ➀ ➁ ➆➇ ➄➅ G 2.5V DRIVE G VDSS .................................................................................. 20V G rDS (ON) (MAX) .............................................................. 30mΩ G ID ........................................................................................... 7A ➃ ➂ ➀ ➂ SOURCE ➁ ➃ GATE ➄ ➅ ➆ ➇ DRAIN TSSOP8 APPLICATION Li - ion battery, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 20 ±10 7 49 7 1.8 7.2 1.6 –55 ~ +150 –55 ~ +150 0.035 Unit V V A A A A A W °C °C g Sep. 2001 L = 10µH MITSUBISHI Nch POWER MOSFET FY7BFH-02E HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Test conditions ID = 1mA, VGS = 0V IG = ± 100µA, VDS = 0V VGS = ± 10V, VDS = 0V VDS = 20V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 4V ID = 3.5A, VGS = 2.5V ID = 7A, VGS = 4V ID = 7A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 20 ±10 — — 0.5 — — — — — — — — — — — — — — Typ. — — — — 0.9 23 30 0.161 16 1400 520 400 30 100 190 190 0.85 — 50 Max. — — ±10 0.1 1.3 30 40 0.210 — — — — — — — — 1.1 78.1 — Unit V V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns VDD = 10V, ID = 3.5A, VGS = 4V, RGEN = RGS = 50Ω IS = 1.8A, VGS = 0V Channel to ambient IS = 1.8A, dis/dt = –50A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 2.0 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 7 5 3 2 tw = 10µs 100µs 1.6 101 7 5 3 2 1ms 1.2 0.8 100 7 5 3 2 10ms 0.4 TC = 25°C Single Pulse 23 5 7 100 23 5 7 101 100ms 0 10–1 0 50 100 150 200 7 DC 23 5 CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 5V 4V 3V 2.5V DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 5V 4V 3V 2.5V 2V TC = 25°C Pulse Test 1.5V 2V DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID (A) 8 TC = 25°C Pulse Test 12 1.5V 6 8 4 PD = 1.6W 4 PD = 1.6W 2 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.1 0.2 0.3 0.4 0.5 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FY7BFH-02E HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 2 5°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) TC = 2 5°C Pulse Test 0.8 80 0.6 60 0.4 ID = 14A 40 VGS = 2.5V 0.2 7A 3A 20 4V 0 0 1.0 2.0 3.0 4.0 5.0 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 20 102 7 5 3 2 FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 16 TC = 25°C 75°C 125°C 101 7 5 3 2 12 8 100 7 5 3 2 VDS = 10V Pulse Test 5 7 100 2 3 5 7 101 2 3 5 4 0 TC = 25°C VDS = 10V Pulse Test 0 1.0 2.0 3.0 4.0 5.0 10–1 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 5 3 Ciss Coss Crss SWITCHING CHARACTERISTICS (TYPICAL) td(off) tf tr 103 7 5 3 2 SWITCHING TIME (ns) 2 CAPACITANCE Ciss, Coss, Crss (pF) 102 7 5 3 2 td(on) 102 7 5 3 2 TCh = 25°C f = 1MHZ VGS = 0V 101 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN-SOURCE VOLTAGE VDS (V) 101 7 5 TCh = 25°C VDD = 10V VGS = 4V RGEN = RGS = 50Ω 2 3 5 7 100 2 3 5 7 101 10–1 DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FY7BFH-02E HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VGS (V) 5.0 TCh = 25°C ID = 7A SOURCE CURRENT IS (A) 4.0 VDS = 7V 10V 15V 16 TC = 125°C 75°C 25°C 3.0 12 2.0 8 1.0 4 0 0 8 16 24 32 40 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = 4V 7 ID = 7A 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 2.0 VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 1.6 1.2 100 7 5 3 2 0.8 0.4 10–1 –50 0 50 100 150 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 0.5 0.2 0.1 0.05 D = 1.0 1.2 101 7 5 1.0 0.8 3 0.02 2 100 7 5 3 2 0.01 Single Pulse PDM tw T D= tw T 0.6 0.4 –50 0 50 100 150 10–1 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) CHANNEL TEMPERATURE Tch (°C) Sep. 2001