2SK3018T106

2SK3018 Transistor 2.5V Drive Nch MOS FET or 2SK3018 zExternal dimensions (Unit : mm) e N co ew m m D es en ig de ns d f zStructure Silicon N-channel MOSFET UMT3 2.0 0.9 0.2 0.3 0.7 1.25 (1) (2) 0.1Min. zApplications Interfacing, switching (30V, 100mA) 2.1 (3) 0.65 0.65 1.3 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. (1) Source Each lead has same dimensions (2) Gate Abbreviated symbol : KN (3) Drain zPackaging specifications Package Type 0.15 zEquivalent circuit Taping Code T106 Basic ordering unit (pieces) 3000 Drain 2SK3018 Gate ∗ Gate R zAbsolute maximum ratings (Ta=25°C) Parameter N ot Drain-source voltage Gate-source voltage Drain current Symbol Limits Unit VDSS 30 V VGSS ±20 V Continuous ID ±100 Pulsed IDP∗1 ±400 mA PD∗2 200 mW Total power dissipation Protection Diode ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltages are exceeded. mA Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C Source ∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands. zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ Limits Unit 625 °C / W ∗ With each pin mounted on the recommended lands. Rev.B 1/3 2SK3018 Transistor zElectrical characteristics (Ta=25°C) Min. Typ. Max. Unit IGSS − − ±1 µA VGS = ±20V, VDS = 0V V(BR)DSS 30 − − V ID = 10µA, VGS = 0V Symbol Gate-source leakage Drain-source breakdown voltage Conditions IDSS − − 1 µA VDS = 30V, VGS = 0V Gate threshold voltage VGS(th) 0.8 − 1.5 V VDS = 3V, ID = 100µA Static drain-source on-state resistance RDS(on) − 5 8 Ω ID = 10mA, VGS = 4V RDS(on) − 7 13 Ω ID = 1mA, VGS = 2.5V e N co ew m m D es en ig de ns d f Zero gate voltage drain current or Parameter Forward transfer admittance |Yfs | 20 − − mS VDS = 3V, ID = 10mA Input capacitance Ciss − 13 − pF VDS = 5V Output capacitance Coss − 9 − pF VGS = 0V Reverse transfer capacitance Crss − 4 − pF f = 1MHz Turn-on delay time td(on) − 15 − ns ID = 10mA, VDD tr − 35 − ns VGS = 5V td(off) − 80 − ns RL = 500Ω tf − 80 − ns RG = 10Ω Rise time Turn-off delay time Fall time 5V 0.15 200m 3V Ta=25°C Pulsed 3.5V 0.1 50m 2.5V 0.05 2V 1 2 20m 10m 5m 2m Ta=125°C 75°C 25°C −25°C 1m 0.5m 0.2m VGS=1.5V 0 0 VDS=3V Pulsed 100m DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 4V GATE THRESHOLD VOLTAGE : VGS(th) (V) zElectrical characteristic curves 3 4 0.1m 0 5 DRAIN-SOURCE VOLTAGE : VDS (V) 1 3 2 4 2 1.5 1 0.5 0 −50 −25 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Typical output characteristics VDS=3V ID=0.1mA Pulsed Fig.3 Gate threshold voltage vs. channel temperature R Fig.2 Typical transfer characteristics Ta=125°C 75°C 25°C −25°C 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 DRAIN CURRENT : ID (A) Fig.4 Static drain-source on-state resistance vs. drain current ( Ι ) 0.5 20 VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C 10 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 DRAIN CURRENT : ID (A) Fig.5 Static drain-source on-state resistance vs. drain current (ΙΙ) 0.5 15 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) N 20 50 VGS=4V Pulsed ot 50 Ta=25°C Pulsed 10 5 ID=0.1A ID=0.05A 0 0 5 10 15 20 GATE-SOURCE VOLTAGE : VGS (V) Fig.6 Static drain-source on-state resistance vs. gate-source voltage Rev.B 2/3 2SK3018 Transistor ID=100mA 6 ID=50mA 5 4 Ta=−25°C 25°C 75°C 125°C 0.1 0.05 0.02 0.01 0.005 0.002 0 25 50 75 100 125 0.001 0.0001 0.0002 150 0.05 0.1 0.2 0.005 0.01 0.02 10m 0V VGS=4V 5m 2m 1m 0.5m 5m 2m 1m 0.5m 0.2m 0.1m 0.5 0 Ciss 10 5 Coss Crss 2 0.1m 0 0.5 1 1000 tf 500 td(off) 200 0.2 0.5 1 2 5 10 20 50 50 20 tr td(on) 10 2 0.1 0.2 R 0.5 1 2 5 10 20 50 100 DRAIN CURRENT : ID (mA) Fig.11 Typical capacitance vs. drain-source voltage Fig.10 Reverse drain current vs. source-drain voltage ( ΙΙ ) Ta=25°C VDD=5V VGS=5V RG=10Ω Pulsed 100 DRAIN-SOURCE VOLTAGE : VDS (V) SOURCE-DRAIN VOLTAGE : VSD (V) 1.5 5 0.5 0.1 1.5 1 Fig.9 Reverse drain current vs. source-drain voltage ( Ι ) 1 0.2m 0.5 SOURCE-DRAIN VOLTAGE : VSD (V) Ta=25°C f=1MHZ VGS=0V 20 CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) 0.0005 0.001 0.002 50 Ta=25°C Pulsed 20m Ta=125°C 75°C 25°C −25°C 10m Fig.8 Forward transfer admittance vs. drain current Fig.7 Static drain-source on-state resistance vs. channel temperature 50m 50m DRAIN CURRENT : ID (A) CHANNEL TEMPERATURE : Tch (°C) 100m VGS=0V Pulsed 20m SWITCHING TIME : t (ns) 0 −50 −25 200m 200m 100m e N co ew m m D es en ig de ns d f 3 1 REVERSE DRAIN CURRENT : IDR (A) 0.2 7 2 VDS=3V Pulsed or 0.5 VGS=4V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| (S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 9 8 Fig.12 Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms) N ot zSwitching characteristics measurement circuit RG VGS Pulse width VGS ID D.U.T. VDS RL 50% 10% VDS VDD 10% 90% 90% tr td(on) ton Fig.13 Switching time measurement circuit 90% 50% 10% td(off) tf toff Fig.14 Switching time waveforms Rev.B 3/3 Appendix or Notes e N co ew m m D es en ig de ns d f No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. R About Export Control Order in Japan N ot Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1