Datasheet
Controller ICs
for High Side NMOSFET
BD2270HFV
General Description
Key Specifications
BD2270HFV is a gate driver for high side N-Channel
MOSFET that comes with a discharge circuit for the
output capacitive load. An internal charge pump
enables the IC to drive the gate of an external high
side NMOSFET without using any external parts. The
power up sequence is controlled by a comparator with
hysteresis function. The space saving HVSOF5
package is used.
Input Voltage Range:
GATE Rise Time (C GATE = 500pF):
GATE Output Voltage(V CC = 5V):
Operating Current:
Standby Current:
Operating Temperature Range:
W(Typ)
Package
2.7V to 5.5V
130μs (Typ)
13.5V(Typ)
50μA(Typ)
5μA (Typ)
-25°C to +85°C
D(Typ)
H (Max)
Features
■
■
■
■
■
Built-in Charge Pump Circuit Drives the Gate of
the External N-Channel Power MOSFET
Built-in Discharge Circuit for Output Charge
Soft Start Circuit
Built-in Comparator with Hysteresis Function at
Control Block Input
Possible to drive N-channel power MOSFET
Applications
PCs
PC Peripheral Devices
Digital Consumer Electronics
HVSOF5
1.60mm x 1.60mm x 0.60mm
Typical Application Circuit
3.3V
V IN_SWITCH
ON/OFF
V OUT_SWITCH
VCC
GATE DISC
AEN
GND
3.3V
Load
BD2270HFV
Lineup
GATE Output Voltage(V CC = 5V)
Min
Typ
Max
10V
13.5V
15V
Package
HVSOF5
Reel of 3000
Orderable Part Number
BD2270HFV-TR
BD2270HFV-GTR
○Product structure：Silicon monolithic integrated circuit ○This product has not designed protection against radioactive rays
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Datasheet
BD2270HFV
Block Diagram
GATE
VCC
OSC
Charge
Pump
(x3)
GND
DISC
Control
AEN
Pin Configuration
(TOP VIEW)
Pin Description
Pin No.
Pin Name
I/O
1
VCC
-
Power input terminal
2
GND
-
Ground terminal
3
AEN
I
Control input terminal
Turn on the external N-Channel MOSFET with a high level input.
High level input > 2.0V, low level input < 0.8V
4
DISC
O
Switch output discharge terminal
5
GATE
O
Gate drive output terminal
Connect to the gate of the external N-Channel MOSFET
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Datasheet
BD2270HFV
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
V CC
-0.3 to +6.0
V
AEN Voltage
V AEN
-0.3 to +6.0
V
DISC Voltage
V DISC
-0.3 to +6.0
V
GATE Voltage
V GATE
-0.3 to +15.0
V
Tstg
-55 to +150
°C
Storage Temperature Range
Power Dissipation
Pd
0.66
(Note 1)
W
(Note 1) Derate by 5.35mW/°C when operating above Ta=25°C (Mounted on a 70mm x 70mm x 1.6mm board).
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated
over the absolute maximum ratings.
Recommended Operating Conditions
Parameter
Rating
Symbol
Min
Typ
Unit
Max
Operating Voltage Range
V CC
2.7
-
5.5
V
Operating Temperature Range
Topr
-25
-
+85
°C
Electrical Characteristics (V CC = 3.0V, Ta= 25°C unless otherwise specified)
Parameter
Limit
Symbol
Min
Typ
Max
Unit
Conditions
Operating Current
I CC
-
50
75
μA
V AEN = 2.5V
Standby Current
I STB
-
5
10
μA
V AEN = 0V
V AENH
1.55
2
2.45
V
High Level Input
V AENL
1.35
1.9
2.35
V
Low Level Input
I AEN
-
3
5
μA
V AEN = 3V
10
13.5
15
V
V CC = 5V
6.6
9.5
9.9
V
V CC = 3.3V
6
8.5
9
V
V CC = 3V
AEN Input Voltage
AEN Input Current
GATE Output Voltage
V GATE
GATE Rise Time
t ON
-
130
750
μs
GATE Fall Time
t OFF
-
18
60
μs
R DISC
-
200
300
Ω
DISC Discharge Resistance
C GATE = 500pF V CC = 3Ｖ
V GATE > 4V
C GATE = 500pF V CC = 3V
V GATE < 0.5V
V AEN = 0V
Measurement Circuit
CGATE
VCC GATE DISC
AEN
ON/OFF
GND
BD2270HFV
Timing Diagram
VAEN
VAENH
VAENL
tT
ON2
ON2
tT
OFF
OFF
tTON1
ON1
VCC+2V
VGATE
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Datasheet
BD2270HFV
Typical Performance Curves
140
Ta=25°C
120
Operating Current:
ICC [µA]:
OPERATING
CURRENT
IDD [μA]
100
100
80
80
60
60
40
40
20
20
0
-50
0
2
3
4
5
CC[V]
SUPPLY
: V[V]
SupplyVOLTAGE
Voltage: VCC
6
Figure 1. Operating Current vs Supply Voltage
(AEN Enable)
0
50
100
AMBIENT
: Ta[℃]
AmbientTEMPERATURE
Temperature: Ta [°C]
Figure 2. Operating Current vs Ambient Temperature
(AEN Enable)
14
14
Ta=25°C
VCC=3.0V
12
OPERATING
CURRENT
Standby Current:
ISTB [µA]:
ISTB [μA]
12
10
10
ISTB [μA]
OPERATING
CURRENT
Standby
Current:
ISTB [µA] :
VCC=3.0V
120
Icc[μA]
Operating
Current:
ICC [µA] :
OPERATING
CURRENT
140
8
6
4
2
8
6
4
2
0
0
2
3
4
5
CC [V]
SUPPLY
: V[V]
SupplyVOLTAGE
Voltage: VCC
-50
6
Figure 3. Standby Current vs Supply Voltage
(AEN Disable)
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50
100
AMBIENT
TEMPERATURE
: Ta[℃]
Ambient Temperature:
Ta [°C]
Figure 4. Standby Current vs Ambient Temperature
(AEN Disable)
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Datasheet
BD2270HFV
Typical Performance Curves - continued
3.0
3.0
2.5
AEN Input Voltage: VAENH, VAENL[V]
ENABLE
INPUT VOLTAGE
: [V]
AEN
Input Voltage:
VAENH, VAENL
AEN
V [V] 0
Ta=25°C
Low to High
2.0
High to Low
1.5
1.0
0.5
Low to High
2.0
High to Low
1.5
1.0
0.5
0.0
0.0
2
3
4
5
CC [V]
SUPPLY
VOLTAGE
: V[V]
Supply Voltage:
VCC
-50
6
Figure 5. AEN Input Voltage vs Supply Voltage
0
50
AMBIENT
TEMPERATURE
Ta[℃]
Ambient
Temperature: Ta: [°C]
100
Figure 6. AEN Input Voltage vs Ambient Temperature
10.0
10.0
Ta=25°C
AEN
InputCURRENT
Current: IAEN
[µA]
[μA]
AEN
INPUT
: I AEN
AEN
InputCURRENT
Current: IAEN
AEN [μA]
AEN
INPUT
: I[µA]
VCC=3.0V
2.5
8.0
6.0
4.0
2.0
VCC=3.0V
8.0
6.0
4.0
2.0
0.0
0.0
2
3
4
5
SUPPLY
VOLTAGE
: CC
VCC
[V]
Supply
Voltage: V
[V]
-50
6
50
100
AMBIENT
: Ta[℃]
AmbientTEMPERATURE
Temperature: Ta [°C]
Figure 7. AEN Input Current vs Supply Voltage
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Figure 8. AEN Input Current vs Ambient Temperature
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Datasheet
BD2270HFV
Typical Performance Curves - continued
Gate Output Voltage: VGATE [V]
GATE OUTPUT VOLTAGE : V GATE [V]
Gate
Output VOLTAGE
Voltage: VGATE
[V] [V]
GATE
OUTPUT
: V GATE
14
Ta=25°C
12
10
8
6
4
2
0
2
3
4
5
CC [V]
SUPPLY
VOLTAGE
Supply Voltage:
VCC: V
[V]
12
VCC=3.0V
10
8
6
4
2
0
-50
6
Figure 9. GATE Output Voltage vs Supply Voltage
0
50
100
AMBIENT
: Ta[℃]
AmbientTEMPERATURE
Temperature: Ta [°C]
Figure 10. GATE Output Voltage vs Ambient Temperature
300
DiscON
Discharge
Resistance:
DISC [Ω]
DISC
RESISTANCE
: R DISCR[Ω]
300
Disc Discharge
Resistance:
RDISC
DISC
ON RESISTANCE
: R DISC
[Ω][Ω]
14
Ta=25°C
250
200
150
100
50
VCC=3.0V
250
200
150
100
50
0
-50
0
2
3
4
5
SUPPLY
VOLTEGE
CC[V]
Supply Voltage:
VCC: V
[V]
6
50
100
AMBIENT
: Ta[℃]
AmbientTEMPERATURE
Temperature: Ta [°C]
Figure 11. DISC Discharge Resistance
vs Supply Voltage
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Figure 12. DISC Discharge Resistance
vs Ambient Temperature
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Datasheet
BD2270HFV
Typical Performance Curves - continued
200
Ta=25°C, CGATE=500pF
VCC=3.0V, CGATE=500pF
160
GATE Rise Time: tON1 [µs]
TURN ON TIME1 : T ON1[μs]
GATE Rise Time: tON1
[µs]
ON1 [μs]
TURN ON TIME1 : T
200
120
80
40
0
2
3
4
5
CC[V]
SUPPLY
: V[V]
Supply VOLTAGE
Voltage: VCC
[μs]
TURN
TIME2
GATEON
Rise
Time:: tTON2ON2
[µs]
GATE ON
RiseTIME2
Time: :tON2
[µs]
TURN
T ON2
[μs]
350
250
200
150
100
50
0
50
100
AMBIENT
: Ta[℃]
Ambient TEMPERATURE
Temperature: Ta [°C]
VCC=3.0V, CGATE=500pF
300
250
200
150
100
50
0
-50
0
6
Figure 15. GATE Rise Time 2 vs Supply Voltage
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Figure 14. GATE Rise Time 1 vs Ambient Temperature
300
3
4
5
SUPPLY
: V[V]
CC [V]
Supply VOLTAGE
Voltage: VCC
80
-50
Ta=25°C, CGATE=500pF
2
120
0
6
Figure 13. GATE Rise Time 1 vs Supply Voltage
350
160
0
50
100
AMBIENT
: Ta[℃]
AmbientTEMPERATURE
Temperature: Ta [°C]
Figure 16. GATE Rise Time 2 vs Ambient Temperature
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Datasheet
BD2270HFV
Typical Performance Curves - continued
20
Ta=25°C, CGATE=500pF
VCC=3.0V, CGATE=500pF
GATE Fall Time: tOFF [µs]
TURN OFF TIME : TOFF[μs]
TURN
OFF
GATE
FallTIME
Time:: tTOFF[μs]
OFF [µs]
20
16
12
8
4
3
4
5
SUPPLY
:V
Supply VOLTAGE
Voltage: VCC
[V]
CC [V]
6
Figure 17. GATE Fall Time vs Supply Voltage
8
4
0
50
AMBIENT
: Ta[℃]
AmbientTEMPERATURE
Temperature: Ta [°C]
100
Figure 18. GATE Fall Time vs Ambient Temperature
100.0
100.0
VCC=5.0V
GATE Drive Current: IG [µA]
GATE DRIVE CURRENT : I G[μA]
GATE
DriveCURRENT
Current: IG:[µA]
GATE
DRIVE
I G[μA]
12
0
-50
0
2
16
10.0
1.0
VCC=3.0V
10.0
1.0
0.1
0.1
0
2
4
6
0
8
4
6
8
GATE
VOLTAGE
ABOVESupply:
SUPPLY
: VGATE
GATE
Voltage Above
VGATE
[V][V]
GATE
VoltageABOVE
Above Supply:
VGATE
[V][V]
GATE
VOLTAGE
SUPPLY
: VGATE
Figure 19. GATE Drive Current vs GATE Voltage
Above Supply
(VCC =5V)
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Figure 20. GATE Drive Current vs GATE Voltage
Above Supply
(VCC = 3V)
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Datasheet
BD2270HFV
Typical Wave Forms
VAEN
(5V/div)
VAEN
(5V/div)
VCC=3.0V
CGATE=500pF
VGATE
(2V/div)
VGATE
(2V/div)
VAEN
(5V/div)
VCC=3.0V
CGATE=500pF
Time (1ms/div)
Time (100μs/div)
Figure 21. GATE Rise / Fall Characteristics
Figure 22. GATE Rise Characteristics
VAEN
(5V/div)
VCC=3.0V
CGATE=500pF
VCC=3.0V
RTF025N03
VGATE
VOUT_SWITCH
VGATE
(2V/div)
(2V/div)
Time (5μs/div)
Time (100μs/div)
Figure 23. GATE Fall Characteristics
Figure 24. GATE Switch Rise Characteristics
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BD2270HFV
Typical Wave Forms - continued
VAEN
(5V/div)
VAEN
(5V/div)
VCC=3.0V
RTF025N03
VCC=3.0V
RTF025N03
CL = 100μF
VGATE
(2V/div)
VAEN
(5V/div)
VGATE
VOUT_SWITCH
VOUT_SWITCH
(2V/div)
Time (5μs/div)
Time (20ms/div)
Figure 25. GATE Switch Fall
Characteristics
Figure 26. GATE Switch Fall
Characteristics
VAEN
(5V/div)
VCC=3.0V
RSS130N03
VCC=3.0V
RSS130N03
VGATE
VGATE
VOUT_SWITCH
VOUT_SWITCH
(2V/div)
(2V/div)
Time (100μs/div)
Time (10μs/div)
Figure 27. GATE Switch Rise
Characteristics
Figure 28. GATE Switch Fall
Characteristics
MOSFET : RTF025N03
RSS130N03
3.3V
VOUT_SWITCH
V IN_SWITCH
CL
1µF
VCC
ON/OFF
GATE
AEN
DISC
GND
BD2270HFV
Figure 29. Switch Rise / Fall Characteristics Measurement Circuit Diagram
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Datasheet
BD2270HFV
Application Circuit
1. Configuration of 3.3V Load Switch
VIN_SWITCH
3.3V
VOUT_SWITCH
3.3V
Load
VCC GATE DISC
ON/OFF
AEN
GND
BD2270HFV
Figure 30. Configuration of 3.3V Load Switch
2. Configuration of 5V Load Switch
5V
5V
Load
VCC GATE DISC
ON/OFF
AEN
GND
BD2270HFV
Figure 31. Configuration of 5V Load Switch
A 5V load switch can be configured like the 3.3V load switch. However, if the external N-Channel MOSFET has low
VGSS, clamp it with a Zener diode or a similar component.
3. Configuration of Low-Voltage Load Switch
1.2V
1.2V
Load
3.3V
VCC GATE DISC
AEN
ON/OFF
GND
BD2270HFV
Figure 32. Configuration of Low-Voltage Load Switch
Providing BD2270HFV a separate drive power supply enables configuration of a low-voltage load switch.
4. Soft Start Configuration
3.3V
3.3V
Load
VCC GATE DISC
ON/OFF
GND
AEN
BD2270HFV
Figure 33. Soft Start Configuration
Connecting an external capacitor to the GATE terminal of BD2270HFV makes it possible to lengthen the rise time of
the N-Channel MOSFET, thus achieving reduction of the inrush current to the large-capacity load capacitor.
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Datasheet
BD2270HFV
Application Information
The system connection diagram shown here does not guarantee the operation of the application circuit.
When the recommended external circuit components are changed, be sure to consider adequate margins by taking into
account external parts and/or IC’s dispersion including not only static characteristics, but also transient characteristics.
1. Functional Description
The BD2270HVF is a gate driver IC for N-Channel MOSFETs used as high side load switches. This IC incorporates the
following functions.
(1)
GATE Drive
The gate drive voltage of the external N-Channel MOSFET is generated by an internal charge pump in the
BD2270HFV. The charge pump generates a voltage three times as high as the power supply voltage at the GATE
terminal. In addition, since this IC has an internal capacitor for the charge pump, it needs no external parts.
The charge pump operates when the AEN is set to High. When the AEN is set to Low, the GATE terminal voltage is
fixed to the GND level.
(2)
Output Discharge Circuit
The output discharge circuit is enabled when the AEN is set to Low. When the discharge circuit is activated, the
200Ω (Typ) MOSFET switch located between the DISC terminal and the GND terminal turns ON. Connecting the
DISC terminal and the source side (load side) of the N-Channel MOSFET makes it possible to immediately
discharge capacitive load.
(3)
Soft Start Function
When the AEN terminal input voltage reaches the High level, the internal charge pump charges the gate of the
N-Channel MOSFET. The Turn ON time of the N-Channel MOSFET is determined by the GATE capacity. In addition,
connecting a capacitor to the GATE terminal makes it possible to lengthen the rise of Turn ON time of the
N-Channel MOSFET, thus achieving reduction of the inrush current to a large capacitive load.
(4)
Analog Control Input Terminal
The AEN input of the BD2270HFV is connected to a hysteresis comparator. Consequently, even analog signals can
control the switching of the external N-Channel MOSFET.
VCC
VIN_SWITCH
VAEN
VGATE
VOUT_SWITCH
Discharge circuit
ON
OFF
ON
Figure 34. Operation Timing
To turn on the power supply (V CC , V IN_SWITCH ), set the AEN to Low.
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Datasheet
BD2270HFV
Power Dissipation
(HVSOF5)
800
Power Dissipation : Pd(mW)
POWER
DISSIPATION : Pd (mW)
700
600
500
400
300
200
100
0
0
25
50
75
100
125
150
Ambient Temperature : Ta (°C)
AMBIENT TEMPERATURE : Ta (℃)
(Mounted on a 70 mm x 70 mm x 1.6 mm glass epoxy board)
Figure 35. Power Dissipation Curve (Pd-Ta Curve)
I/O Equivalence Circuit
Pin Name
Pin No.
AEN
3
DISC
4
GATE
5
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Datasheet
BD2270HFV
Operational Notes
1.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
2.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when
the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum
rating, increase the board size and copper area to prevent exceeding the Pd rating.
6.
Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately
obtained. The electrical characteristics are guaranteed under the conditions of each parameter.
7.
In rush Current
8.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush
current may flow instantaneously due to the internal powering sequence and delays, especially if the IC
has more than one power supply. Therefore, give special consideration to power coupling capacitance,
power wiring, width of ground wiring, and routing of connections.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment)
and unintentional solder bridge deposited in between pins during assembly to name a few.
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Datasheet
BD2270HFV
Operational Notes - continued
11. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
C
Pin A
N
P+
N
P
N
P+
N
Parasitic
Elements
N
P+
GND
E
N P
N
P+
B
N
C
E
Parasitic
Elements
P Substrate
P Substrate
Parasitic
Elements
Pin B
B
Parasitic
Elements
GND
GND
Figure 36. Example of monolithic IC structure
N Region
close-by
GND
13. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Thermal design
Perform thermal design in which there are adequate margins by taking into account the power dissipation (Pd) in
actual states of use.
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Datasheet
BD2270HFV
Ordering Information
B
D
2
2
7
0
Part Number
H
F
V
Package
HFV: HVSOF5
-
GTR
Packaging and forming specification
G: Halogen Free
TR: Embossed tape and reel
Marking Diagram
HVSOF5(TOP VIEW)
AA
Part Number Marking
LOT Number
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Datasheet
BD2270HFV
Physical Dimension Tape and Reel Information
Package Name
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© 2013 ROHM Co., Ltd. All rights reserved.
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HVSOF5
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Datasheet
BD2270HFV
Revision History
Date
Revision
11.Mar.2013
25.Jun.2013
21.Aug.2014
001
002
003
Changes
New Release
Modified figure 34.
Applied the ROHM Standard Style and improved understandability.
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Datasheet
Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
, transport
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice – GE
© 2013 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice – GE
© 2013 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
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