MP6K12TCR

MP6K12 Data Sheet 4V Drive Nch + Nch MOSFET MP6K12  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) MPT6 (Duel) Features 1) Low on-resistance. 2) High power package(MPT6). 3) Low voltage drive(4V drive). (6) (5) (4) (1) (2) (3)  Application Switching  Inner circuit  Packaging specifications Type Package Code Basic ordering unit (pieces) Taping TCR 1000  MP6K12 (6) (5) (4) ∗1 ∗2 ∗2  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Drain current Source current (Body Diode) Continuous ID Pulsed Continuous IDP Is *1 Pulsed Isp *1 Power dissipation Channel temperature Range of storage temperature PD Tch Tstg *2 5 A 12 1.6 A A 12 A (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE 2.0 W / TOTAL 1.4 W / ELEMENT 150 C 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.04 - Rev.A Data Sheet 　 MP6K12  Electrical characteristics (Ta = 25C) Symbol Min. Typ. Max. Unit IGSS   10 A Drainsource breakdown voltage V (BR)DSS 30   V ID=1mA, VGS=0V Zero gate voltage drain current IDSS   1 A VDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0  2.5 V VDS=10V, ID=1mA Static drainsource onstate resistance RDS (on)*  30 42 ID=5.0A, VGS=10V  40 56 m ID=5.0A, VGS=4.5V  45 63 l Yfs l * 2.5   S ID=5.0A, VDS=10V Input capacitance Ciss  250  pF VDS=10V Output capacitance Coss  90  pF VGS=0V Reverse transfer capacitance Crss  45  pF f=1MHz Turnon delay time td(on) *  6  ns ID=2.5A, VDD 15V tr *  27  ns VGS=10V td(off) *  26  ns RL=6.0 Parameter Gatesource leakage Forward transfer admittance Rise time Turnoff delay time Conditions VGS=20V, VDS=0V ID=5.0A, VGS=4.0V tf *  5  ns RG=10 Total gate charge Qg *  4.0  nC ID=5.0A, VDD 15V Gatesource charge Gatedrain charge Qgs * Qgd *   1.2 1.2   nC nC VGS=5V Fall time *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max.   1.2 Unit V Conditions Is=5.0A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.04 - Rev.A Data Sheet 　 MP6K12 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics ( I ) Fig.2 Typical Output Characteristics (II) 5 5 VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 3.0V VGS= 2.5V 4 DRAIN CURRENT : ID[A] 4 DRAIN CURRENT : ID[A] Ta=25°C Pulsed VGS= 2.5V 3 2 VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.8V 3 2 1 VGS= 2.0V 1 VGS= 2.0V Ta=25°C Pulsed 0 0 0 0.2 0.4 0.6 0.8 1 0 2 DRAIN-SOURCE VOLTAGE : VDS[V] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mW] DRAIN CURRENT : ID[A] 8 10 Ta=25°C Pulsed VDS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 VGS= 4.0V VGS= 4.5V VGS= 10V 100 . 10 0.001 0 1 2 0.1 3 1 10 DRAIN-CURRENT : ID[A] GATE-SOURCE VOLTAGE : VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current (II) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current (III) 1000 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mW] VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mW] 6 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( I ) Fig.3 Typical Transfer Characteristics 10 1 4 DRAIN-SOURCE VOLTAGE : VDS[V] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 VGS= 4.5V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 0.1 1 10 0.1 DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 10 DRAIN-CURRENT : ID[A] 3/6 2011.04 - Rev.A Data Sheet 　 MP6K12 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (IV) Fig.8 Forward Transfer Admittance vs. Drain Current 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mW] VGS= 4.0V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 0.1 1 VDS= 10V Pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 10 0.1 Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mW] VGS=0V Pulsed SOURCE CURRENT : Is [A] 10 100 10 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 ID= 2.5A 80 ID= 5.0A 60 40 20 0 0 0.5 1 1.5 0 5 SOURCE-DRAIN VOLTAGE : VSD [V] 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics 10 1000 tf GATE-SOURCE VOLTAGE : VGS [V] Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed td(off) SWITCHING TIME : t [ns] 1 DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] 100 td(on) 10 tr 1 8 6 4 Ta=25°C VDD= 15V ID= 5.0A RG=10Ω Pulsed 2 0 0.01 0.1 1 10 0 DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2 4 6 8 10 TOTAL GATE CHARGE : Qg [nC] 4/6 2011.04 - Rev.A Data Sheet 　 MP6K12 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 1000 100 Operation in this area is limited by RDS(ON) (VGS=10V) Ciss DRAIN CURRENT : ID (A) CAPACITANCE : C [pF] 10 100 Crss Coss PW =100us 1 PW = 1ms PW =10ms 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Ta=25°C f=1MHz VGS=0V 10 DC operation 0.01 0.01 0.1 1 10 100 0.1 DRAIN-SOURCE VOLTAGE : VDS[V] 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 10 Ta=25°C Single Pulse : 1Unit 1 0.1 0.01 0.001 0.0001 0.001 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.04 - Rev.A Data Sheet 　 MP6K12  Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2　Switching Waveforms VG VGS ID VDS Qg RL IG(Const.) VGS D.U.T. Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A