MP6M12TCR

MP6M12 Data Sheet 4V Drive Nch + Pch MOSFET MP6M12  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions (Unit : mm) MPT6 (Duel) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).  Application Switching (6) (5) (4) (1) (2) (3) Inner circuit (6) (5) ∗1  Packaging specifications Type Package Code Basic ordering unit (pieces) MP6M12 (4) Taping TCR 1000  (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain ∗2 ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage VDSS Gate-source voltage Drain current Source current (Body Diode) Symbol Continuous VGSS ID Pulsed Continuous IDP Is *1 Pulsed Isp *1 PD *2 Total power dissipation Channel temperature Range of storage temperature Tch Tstg Limits Tr1 : N-ch Tr2 : P-ch Unit 30 ±20 30 ±20 V V 5.0 5.0 A 12 1.6 12 1.6 A A 12 12 A 2.0 1.4 150 55 to 150 W / TOTAL W / ELEMENT C C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/10 2011.10 - Rev.A Data Sheet MP6M12  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - ±10 A VGS=±20V, VDS=0V Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current Gate threshold voltage Conditions 30 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=30V, VGS=0V VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA - 30 42 ID=5.0A, VGS=10V m ID=5.0A, VGS=4.5V Static drain-source on-state resistance RDS (on) - 40 56 - 45 63 Forward transfer admittance l Yfs l* 2.5 - - S VDS=10V, ID=5.0A Input capacitance Ciss - 250 - pF VDS=10V Output capacitance Coss - 90 - pF VGS=0V Reverse transfer capacitance Crss - 45 - pF f=1MHz Turn-on delay time td(on)* - 6 - ns ID=2.5A, VDD 15V tr * - 27 - ns VGS=10V td(off)* - 26 - ns RL=6 tf * - 5 - ns RG=10 Total gate charge Qg * - 4.0 - nC ID=5.0A Gate-source charge Gate-drain charge Qgs * Qgd * - 1.2 1.2 - nC nC VDD 15V VGS=5V Rise time Turn-off delay time Fall time * ID=5.0A, VGS=4.0V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=5.0A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/10 2011.10 - Rev.A Data Sheet MP6M12  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - ±10 A VGS=±20V, VDS=0V Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current Gate threshold voltage 30 - - V ID=1mA, VGS=0V - 1 A VDS=30V, VGS=0V 1.0 - 2.5 V VDS=10V, ID=1mA - 40 56 ID=4.5A, VGS=10V m ID=2.5A, VGS=4.5V IDSS VGS (th) Conditions Static drain-source on-state resistance RDS (on) - 55 77 - 60 84 Forward transfer admittance l Yfs l* 2.5 - - S ID=4.5A, VDS=10V Input capacitance Ciss - 800 - pF VDS=10V Output capacitance Coss - 120 - pF VGS=0V Reverse transfer capacitance Crss - 110 - pF f=1MHz Turn-on delay time td(on)* - 10 - ns ID=2.5A, VDD 15V tr * - 25 - ns VGS=10V td(off)* - 80 - ns RL=6.0 tf * - 65 - ns RG=10 Total gate charge Qg * - 8.4 nC ID=4.5A Gate-source charge Gate-drain charge Qgs * Qgd * - 3.0 3.5 - nC nC VDD 15V VGS=5V Rise time Turn-off delay time Fall time * ID=2.5A, VGS=4.0V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=4.5A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/10 2011.10 - Rev.A Data Sheet 　 MP6M12 Electrical characteristic curves (Ta=25C) 〈Tr.1(Nch)〉 Fig.1 Typical Output Characteristics ( I ) Fig.2 Typical Output Characteristics (II) 5 5 VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 3.0V VGS= 2.5V 4 DRAIN CURRENT : ID[A] 4 DRAIN CURRENT : ID[A] Ta=25°C Pulsed VGS= 2.5V 3 2 VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.8V 3 2 1 VGS= 2.0V 1 VGS= 2.0V Ta=25°C Pulsed 0 0 0 0.2 0.4 0.6 0.8 1 0 2 DRAIN-SOURCE VOLTAGE : VDS[V] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mW] DRAIN CURRENT : ID[A] 8 10 Ta=25°C Pulsed VDS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 VGS= 4.0V VGS= 4.5V VGS= 10V 100 . 10 0.001 0 1 2 0.1 3 1 10 DRAIN-CURRENT : ID[A] GATE-SOURCE VOLTAGE : VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current (II) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current (III) 1000 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mW] VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mW] 6 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( I ) Fig.3 Typical Transfer Characteristics 10 1 4 DRAIN-SOURCE VOLTAGE : VDS[V] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 VGS= 4.5V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 0.1 1 10 0.1 DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 10 DRAIN-CURRENT : ID[A] 4/10 2011.10 - Rev.A Data Sheet 　 MP6M12 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (IV) Fig.8 Forward Transfer Admittance vs. Drain Current 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mW] VGS= 4.0V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 0.1 1 VDS= 10V Pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 10 0.1 Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mW] VGS=0V Pulsed SOURCE CURRENT : Is [A] 10 100 10 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 ID= 2.5A 80 ID= 5.0A 60 40 20 0 0 0.5 1 1.5 0 5 SOURCE-DRAIN VOLTAGE : VSD [V] 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics 10 1000 tf GATE-SOURCE VOLTAGE : VGS [V] Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed td(off) SWITCHING TIME : t [ns] 1 DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] 100 td(on) 10 tr 1 8 6 4 Ta=25°C VDD= 15V ID= 5.0A RG=10Ω Pulsed 2 0 0.01 0.1 1 10 0 DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2 4 6 8 10 TOTAL GATE CHARGE : Qg [nC] 5/10 2011.10 - Rev.A Data Sheet 　 MP6M12 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 1000 100 Operation in this area is limited by RDS(ON) (VGS=10V) Ciss DRAIN CURRENT : ID (A) CAPACITANCE : C [pF] 10 100 Crss Coss PW =100us 1 PW = 1ms PW =10ms 0.1 Ta=25°C f=1MHz VGS=0V Ta = 25°C Single Pulse : 1Unit Mounted on a ceramic board 10 DC operation 0.01 0.01 0.1 1 10 100 0.1 DRAIN-SOURCE VOLTAGE : VDS[V] 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 10 1 0.1 Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) 0.01 Rth(ch-a) = 89.3 °C/W 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/10 2011.10 - Rev.A 〈Tr.2(Pch)〉 Data Sheet 　 MP6M12 Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) 4.5 4.5 VGS= -10V 4 VGS= -3.0V Ta=25°C Pulsed VGS= -4.5V VGS= -4.0V 2.5 VGS= -2.8V 2 VGS= -2.8V 3.5 DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] 3.5 3 VGS= -3.0V 4 1.5 3 VGS= -10V VGS= -4.5V VGS= -4.0V 2.5 2 1.5 1 VGS= -2.5V 1 0.5 0.5 VGS= -2.5V 0 0 0 0.2 0.4 0.6 0.8 1 0 2 DRAIN-SOURCE VOLTAGE : -VDS[V] 6 8 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10 1000 Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VDS= -10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 DRAIN CURRENT : -ID[A] 4 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.3 Typical Transfer Characteristics VGS= -4.0V VGS= -4.5V VGS= -10V 100 0.1 0.01 10 0.001 0 1 2 0.1 3 1 10 DRAIN-CURRENT : -ID[A] GATE-SOURCE VOLTAGE : -VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 1000 VGS= -10V Pulsed VGS= -4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=25°C Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 0.1 1 10 0.1 DRAIN-CURRENT : -ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 10 DRAIN-CURRENT : -ID[A] 7/10 2011.10 - Rev.A Data Sheet 　 MP6M12 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Forward Transfer Admittance vs. Drain Current 10 VGS= -4.0V Pulsed VDS= -10V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 10 0.1 1 10 0.1 100 10 VGS=0V Pulsed Ta=25°C Pulsed ID= -2.5A STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] SOURCE CURRENT : -Is [A] 10 Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 80 ID= -4.5A 60 40 20 0 0 0.5 1 1.5 0 SOURCE-DRAIN VOLTAGE : -VSD [V] 5 10 15 GATE-SOURCE VOLTAGE : -VGS[V] Fig.12 Dynamic Input Characteristics Fig.11 Switching Characteristics 1000 10 td(off) GATE-SOURCE VOLTAGE : -VGS [V] VDD≒-15V VGS=-10V RG=10W Ta=25°C Pulsed tf SWITCHING TIME : t [ns] 1 DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A] 100 tr 10 td(on) 1 8 6 4 Ta=25°C VDD= -15V ID= -4.5A Pulsed 2 0 0.01 0.1 1 10 0 DRAIN CURRENT : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5 10 15 TOTAL GATE CHARGE : Qg [nC] 8/10 2011.10 - Rev.A Data Sheet 　 MP6M12 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 10000 100 Operation in this area is limited by RDS(on) (VGS = -10V) Ciss PW = 100μs 10 DRAIN CURRENT : -ID [ A ] CAPACITANCE : C [pF] Ta=25°C f=1MHz VGS=0V 1000 100 Crss Coss 1 PW = 1ms PW = 10ms 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) DC Operation 0.01 10 0.01 0.1 1 10 0.1 100 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS [ V ] DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 10 1 0.1 0.01 0.001 0.0001 Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 89.3 °C/W 0.01 1 100 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/10 2011.10 - Rev.A Data Sheet MP6M12  Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr tf ton Fig.1-1 Switching Time Measurement Circuit toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Pulse width ID VDS VGS VGS 10% 50% 90% 50% RL D.U.T. 10% VDD RG VDS 90% td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit 10% tf toff Fig.1-2 Switching Waveforms VG ID VDS VGS RL IG(Const.) D.U.T. Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/10 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A