MP6M11

Data Sheet 4V Drive Nch + Pch MOSFET MP6M11  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6). Dimensions (Unit : mm) MPT6 (Duel) (6) (5) (4) (1) (2) (3)  Application Switching Inner circuit (6) (5) ∗1 (4)  Packaging specifications Type MP6M11 Package Code Basic ordering unit (pieces) Taping TCR 1000  ∗2 ∗2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Total power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS Limits Tr1 : N-ch Tr2 : P-ch 30 ±20 3.5 12 1.6 12 30 ±20 3.5 12 1.6 12 Unit V V A A A A W / TOTAL W / ELEMENT C C Continuous Pulsed Continuous Pulsed VGSS ID IDP Is Isp PD *1 *1 *2 Tch Tstg 2.0 1.4 150 55 to 150 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/10 2011.03 - Rev.A MP6M11  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Data Sheet Symbol IGSS IDSS VGS (th) RDS (on) * l Yfs l Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * * Min. 30 1.0 1.5 - Typ. 70 90 100 85 40 20 4 8 18 3 1.9 0.8 0.4 Max. ±10 1 2.5 98 126 140 - Unit A V A V Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=3.5A, VGS=10V Drain-source breakdown voltage V (BR)DSS m ID=3.5A, VGS=4.5V ID=3.5A, VGS=4.0V S pF pF pF ns ns ns ns nC nC nC VDS=10V, ID=3.5A VDS=10V VGS=0V f=1MHz ID=1.75A, VDD 15V VGS=10V RL=8.6 RG=10 ID=3.5A VDD 15V VGS=5V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=3.5A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/10 2011.03 - Rev.A MP6M11  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Data Sheet Symbol IGSS IDSS VGS (th) RDS (on) l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * * Min. 30 1.0 2.5 - Typ. 70 100 110 410 55 55 9 18 35 12 4.2 1.7 1.1 Max. ±10 1 2.5 98 140 155 - Unit A V A V Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=3.5A, VGS=10V Drain-source breakdown voltage V (BR)DSS m ID=1.7A, VGS=4.5V ID=1.7A, VGS=4.0V S pF pF pF ns ns ns ns nC nC nC ID=3.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=1.7A, VDD 15V VGS=10V RL=8.8 RG=10 ID=3.5A VDD 15V VGS=5V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=3.5A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/10 2011.03 - Rev.A MP6M11 Electrical characteristic curves (Ta=25C) 〈Tr.1(Nch)〉 3.5 3 2.5 2 VGS= 2.8V 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V] VGS= 2.5V Ta=25°C Pulsed VGS= 10V VGS= 4.5V VGS= 4.0V Fig.1 Typical Output Characteristics(Ⅰ) 　 Data Sheet Fig.2 Typical Output Characteristics(Ⅱ) 3.5 3 DRAIN CURRENT : ID[A] 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS[V] VGS= 2.5V VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.8V DRAIN CURRENT : ID[A] Ta=25°C Pulsed Fig.3 Typical Transfer Characteristics 10 VDS= 10V Pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Ta=25°C Pulsed VGS= 4.0V VGS= 4.5V VGS= 10V STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] DRAIN CURRENT : ID[A] 0.1 100 . 0.01 0.001 0 1 2 3 GATE-SOURCE VOLTAGE : VGS[V] 10 0.1 1 DRAIN-CURRENT : ID[A] 10 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1000 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 4.5V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 100 10 0.1 1 DRAIN-CURRENT : ID[A] 10 10 0.1 1 DRAIN-CURRENT : ID[A] 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/10 2011.03 - Rev.A MP6M11 　 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Data Sheet Fig.8 Forward Transfer Admittance vs. Drain Current 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1000 VGS= 4.0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C VDS= 10V Pulsed 100 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 10 0.1 1 DRAIN-CURRENT : ID[A] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 10 VGS=0V Pulsed SOURCE CURRENT : Is [A] 10 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 200 Ta=25°C Pulsed ID= 1.75A STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 150 1 ID= 3.5A 100 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 50 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] 0 0 2 4 6 8 GATE-SOURCE VOLTAGE : VGS[V] 10 Fig.11 Switching Characteristics 1000 td(off) SWITCHING TIME : t [ns] tf 100 Ta=25°C VDD= 15V VGS=10V RG=10Ω Pulsed 10 Fig.12 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS [V] 8 6 4 Ta=25°C VDD= 15V ID= 3.5A Pulsed 0 1 2 3 4 5 10 td(on) 2 tr 1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] 0 TOTAL GATE CHARGE : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/10 2011.03 - Rev.A MP6M11 　 Fig.13 Typical Capacitance vs. Drain-Source Voltage Data Sheet Fig.14 Maximum Safe Operating Aera 100 Operation in this area is limited by RDS(ON) (VGS=10V) 1000 Ciss CAPACITANCE : C [pF] DRAIN CURRENT : ID (A) 10 100 PW =100us 1 PW =1ms PW = 10ms 0.1 T a = 25℃ Single Pulse:1Unit Mounted on a ceramic board 0.01 Crss 10 Ta=25°C f=1MHz VGS=0V 1 0.01 0.1 1 10 100 Cos DC operation 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 10 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 1 0.1 0.01 Ta = 25℃ Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 89.3℃/W 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/10 2011.03 - Rev.A MP6M11 〈Tr.2(Pch)〉 Fig.1 Typical Output Characteristics(Ⅰ) Ta=25°C Pulsed 　 Data Sheet Fig.2 Typical Output Characteristics(Ⅱ) VGS= -3.0V 3 3 VGS= -10V VGS= -4.5V VGS= -4.0V Ta=25°C Pulsed VGS= -2.8V DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] 2 VGS= -3.0V 2 VGS= -10V VGS= -4.5V VGS= -4.0V 1 VGS= -2.8V 1 VGS= -2.5V VGS= -2.5V 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : -VDS[V] 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.3 Typical Transfer Characteristics 10 VDS= -10V Pulsed 1 DRAIN CURRENT : -ID[A] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= -4.0V VGS= -4.5V VGS= -10V 0.1 100 0.01 0.001 0 1 2 3 GATE-SOURCE VOLTAGE : -VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 VGS= -10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 VGS= -4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 100 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/10 2011.03 - Rev.A MP6M11 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= -4.0V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 　 Fig.8 Forward Transfer Admittance vs. Drain Current FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 100 VDS= -10V Pulsed Data Sheet 10 100 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 10 VGS=0V Pulsed SOURCE CURRENT : -Is [A] 10 0.1 0.01 0.1 1 10 100 DRAIN-CURRENT : -ID[A] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 250 ID= -1.7A 200 Ta=25°C Pulsed 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 150 ID= -3.5A 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 50 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : -VSD [V] 0 0 5 10 15 GATE-SOURCE VOLTAGE : -VGS[V] Fig.11 Switching Characteristics 1000 tf SWITCHING TIME : t [ns] td(off) Ta=25°C VDD= -15V VGS= -10V RG=10Ω Pulsed 10 Fig.12 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : -VGS [V] 8 100 6 td(on) 10 4 Ta=25°C VDD= -15V ID= -3.5A RG=10Ω Pulsed 0 2 4 6 8 10 2 tr 1 0.01 0.1 1 10 DRAIN-CURRENT : -ID[A] 0 TOTAL GATE CHARGE : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 8/10 2011.03 - Rev.A MP6M11 　 Fig.13 Typical Capacitance vs. Drain-Source Voltage Data Sheet Fig.14 Maximum Safe Operating Aera 100 1000 Ciss Operation in this area is limited by RDS(ON) (VGS=-10V) DRAIN CURRENT : -ID (A) 10 PW =100us CAPACITANCE : C [pF] Coss 100 1 PW =1ms PW = 10ms 0.1 T a = 2 5 °C Single Pulse : 1Unit Mounted on a ceramic board 0.01 DC operation Crss Ta=25°C f=1MHz 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 10 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 1 0.1 0.01 Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 89.3°C/W 0.001 0.01 0.1 1 10 100 1000 0.001 0.0001 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/10 2011.03 - Rev.A MP6M11  Measurement circuits Pulse width Data Sheet VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Pulse Width VGS ID RL D.U.T. VDS VGS 10% 50% 10% 90% 50% 10% 90% RG VDD VDS td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms VG ID VGS RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/10 2011.03 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. 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