MP6T11

Midium Power Transistors (-30V / -1A) MP6T11  Structure PNP Silicon epitaxial planar transistor  Features Low saturation voltage V CE (sat) = -0.35V (Max.) (I C / I B= -500mA / -25mA) (1) Tr.1 (2) Tr.1 (3) Tr.2 (4) Tr.2 (5) Tr.2 (6) Tr.1 Emitter Base Collector Emitter Base Collector  Dimensions (Unit : mm) MPT6 (Dual) (6) (5) (4) (1) (2) (3)  Applications Low Frequency Amplifier Driver  Packaging specifications Type Package MPT6 Code TR Basic ordering unit (pieces) 1000  Inner circuit (Unit : mm) (6) (5) (4) Tr.2 Absolute maximum ratings (Ta=25°C) 　 Tr.1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature *1 Pw=10ms, Single Pulse *2 Mounted on a 40 x 40 x 0.7[mm] ceramic board Symbol VCBO Limits Unit V V V A A W/Total W/Element C C DC Pulsed -30 -30 VCEO VEBO -6 IC -1 ICP *1 -2 *2 PD 2.0 1.4 PD *2 Tj 150 Tstg -55 to 150 (1) Tr.1 (2) Tr.1 (3) Tr.2 (4) Tr.2 (5) Tr.2 (6) Tr.1 Emitter Base Collector Emitter Base Collector (1) (2) (3) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.12 - Rev.A MP6T11 Electrical characteristics (Ta=25°C) 　 Data Sheet Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time * See switching time test circuit Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob ton * tstg * tf * Min. -30 -30 -6 270 - Typ. -150 320 7 60 160 50 Max. -100 -100 -350 680 - Unit V V V nA nA MHz pF ns ns ns Conditions IC= -1mA IC= -10μA IE= -10μA VCB= -30V VEB= -6V VCE= -2V, I C= -100mA VCE= -2V IE=100mA, f=100MHz VCB= -10V, I E=0A f=1MHz IC= -500mA, I B1= -25mA, _ IB2=25mA, VCC ~ -5V mV IC= -500mA, I B= -25mA www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.12 - Rev.A MP6T11 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics -5.0mA -4.0mA -0.50 -0.45 COLLECTOR CURRENT :IC[A] -0.40 -0.35 -0.30 -1.0mA -0.25 -0.20 -0.15 IB=-0.5mA -0.10 -0.05 Ta=25°C 0.00 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -2.0mA -3.0mA 　 Data Sheet Fig.2 DC Current Gain vs. Collector Current( Ⅰ) 1000 Ta=25°C -1.5mA DC CURRENT GAIN :hFE 100 VCE=-5V -2V 10 -1 -10 -100 -1000 COLECTOR TO EMITTER VOLTAGE:VCE[V] Fig.3 DC Current Gain vs. Collector Current( Ⅱ) 1000 COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] COLLECTOR CURRENT :IC[mA] Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current( Ⅰ) -10 Ta=25°C Pulsed DC CURRENT GAIN :hFE -1 100 Ta=125°C 75°C 25°C -40°C IC/IB=50 20 10 -0.1 VCE=-2V Pulsed 10 -1 -10 -100 -1000 -0.01 -1 -10 -100 -1000 COLLECTOR CURRENT :IC[mA] Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current( Ⅱ) -1 COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] -1000 VCE=-2V Pulsed COLLECTOR CURRENT :IC[mA] COLLECTOR CURRENT :IC[mA] Fig.6 Ground Emitter Propagation Characteristics -100 Ta=125°C 75°C 25°C -40°C -0.1 -10 IC/IB=20 Pulsed -0.01 -1 -10 Ta=125°C 75°C 25°C -40°C -1 -100 -1000 0 -0.5 -1 -1.5 COLLECTOR CURRENT :IC[mA] BASE TO EMITTER VOLTAGE :VBE[V] www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/5 2010.12 - Rev.A MP6T11 　 Data Sheet Fig.7 Emitter input capacitance vs. Emitter -Base Voltage Collector output capacitance vs.Collector -Base Voltage 100 COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) Ta=25°C f=1MHz IC=0A 1000 Fig8. Gain Bandwidth Product vs. Emitter Current 10 TRANSITION FREQUENCY : fT [MHz] Cib 100 Cob Ta=25°C VCE=-2V f=100MHz 10 10 100 EMITTER CURRENT :IE[mA] 1000 1 -0.1 -1 -10 -100 COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) Fig9. SAFE OPERATING AREA -10 1ms COLLECTOR CURRENT : IC (A) 10ms -1 100ms -0.1 DC （Mounted on a ceramic board) -0.01 Ta=25°C W hen one element operated Single non repetitive pulse -0.001 -0.1 -1 -10 -100 COLLECTOR TO EMITTER VOLTAGE :VCE(V) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.12 - Rev.A MP6T11  Switching time test circuit RL=10Ω VIN Pw IB1 IC Data Sheet VCC _ ~ -5V _ Pw ~ 50μs DUTY CYCLE≦1% IB2 IB2 BASE CURENT WAVEFORM IB1 ton 90% COLLECTOR CURRENT WAVEFORM tstg tf IC 10% www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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