MP6K11

Data Sheet 4V Drive Nch + Nch MOSFET MP6K11  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) High power package(MPT6). 3) Low voltage drive(4V drive).  Dimensions (Unit : mm) MPT6 (Duel) (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Type MP6K11 Package Code Basic ordering unit (pieces) Taping TCR 1000   Inner circuit (6) (5) ∗1 (4) ∗2 ∗2  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits 30 20 3.5 Unit V V A A A A (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP Is Isp PD Tch Tstg *1 12 1.6 12 *1 *2 2.0 W / TOTAL 1.4 W / ELEMENT 150 C 55 to 150 C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.04 - Rev.A MP6K11  Electrical characteristics (Ta = 25 C) Parameter Gatesource leakage Drainsource breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drainsource onstate resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turnon delay time Rise time Turnoff delay time Fall time Total gate charge Gatesource charge Gatedrain charge *Pulsed 　 Data Sheet Symbol IGSS V (BR)DSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min.  30  1.0    1.5           Typ.     70 90 110  85 40 20 4 8 18 3 1.9 0.8 0.4 Max. 10  1 2.5 98 126 140            Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=3.5A, VGS=10V m ID=3.5A, VGS=4.5V ID=3.5A, VGS=4.0V S pF pF pF ns ns ns ns nC nC nC ID=3.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=1.75A, VDD 15V VGS=10V RL=6.0 RG=10 ID=3.5A, VDD 15V VGS=5V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min.  Typ.  Max. 1.2 Unit V Conditions Is=3.5A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.04 - Rev.A MP6K11 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics(Ⅰ) 3.5 3 2.5 2 VGS= 2.8V 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V] VGS= 2.5V Ta=25°C Pulsed VGS= 10V VGS= 4.5V VGS= 4.0V 　 Data Sheet Fig.2 Typical Output Characteristics(Ⅱ) 3.5 3 DRAIN CURRENT : ID[A] 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS[V] VGS= 2.5V VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.8V DRAIN CURRENT : ID[A] Ta=25°C Pulsed Fig.3 Typical Transfer Characteristics 10 VDS= 10V Pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Ta=25°C Pulsed VGS= 4.0V VGS= 4.5V VGS= 10V STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] DRAIN CURRENT : ID[A] 0.1 100 . 0.01 0.001 0 1 2 3 GATE-SOURCE VOLTAGE : VGS[V] 10 0.1 1 DRAIN-CURRENT : ID[A] 10 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1000 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 4.5V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 100 10 0.1 1 DRAIN-CURRENT : ID[A] 10 10 0.1 1 DRAIN-CURRENT : ID[A] 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.04 - Rev.A MP6K11 　 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Data Sheet Fig.8 Forward Transfer Admittance vs. Drain Current 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1000 VGS= 4.0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C VDS= 10V Pulsed 100 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 10 0.1 1 DRAIN-CURRENT : ID[A] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 10 VGS=0V Pulsed SOURCE CURRENT : Is [A] 10 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 200 Ta=25°C Pulsed ID= 1.75A STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 150 1 ID= 3.5A 100 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 50 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] 0 0 2 4 6 8 GATE-SOURCE VOLTAGE : VGS[V] 10 Fig.11 Switching Characteristics 1000 td(off) SWITCHING TIME : t [ns] tf 100 Ta=25°C VDD= 15V VGS=10V RG=10Ω Pulsed 10 Fig.12 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS [V] 8 6 4 Ta=25°C VDD= 15V ID= 3.5A Pulsed 0 1 2 3 4 5 10 td(on) 2 tr 1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] 0 TOTAL GATE CHARGE : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.04 - Rev.A MP6K11 　 Fig.13 Typical Capacitance vs. Drain-Source Voltage Data Sheet Fig.14 Maximum Safe Operating Aera 100 Operation in this area is limited by RDS(ON) (VGS=10V) 1000 Ciss CAPACITANCE : C [pF] DRAIN CURRENT : ID (A) 10 100 PW =100us 1 PW =1ms PW = 10ms 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10 Crss 10 Ta=25°C f=1MHz VGS=0V 1 0.01 0.1 1 10 100 Coss DC operation 0.01 100 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 10 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) Ta=25°C Single Pulse : 1Unit 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.01 0.1 1 10 100 1000 0.001 0.0001 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.04 - Rev.A MP6K11  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A