RBR10NS30A
Schottky Barrier Diode
Data sheet
● Outline
VR
30
V
Io
10
A
IFSM
50
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low V F
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
Quantity(pcs)
1000
Taping Code
TL
Marking
BR10NS30A
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
30
V
Reverse voltage
VR
Reverse direct voltage
30
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=135℃Max.
10
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
50
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
很抱歉,暂时无法提供与“RBR10NS30ATL”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格 香港价格
- 1+7.979891+0.96530
- 10+5.9869410+0.72422
- 50+3.9858950+0.48216
- 100+3.19196100+0.38612
- 500+2.98942500+0.36162
- 1000+2.876001000+0.34790
- 2000+2.835492000+0.34300
- 4000+2.811194000+0.34006