RGWS60TS65DGC13

RGWS60TS65D Datasheet 650V 30A Field Stop Trench IGBT lOutline VCES 650V IC (100°C) 30A VCE(sat) (Typ.) 1.6V PD 156W lFeatures TO-247GE (1) (2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching *1 3) Low Switching Loss & Soft Switching (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) 5) Pb - free Lead Plating ; RoHS Compliant lApplication lPackaging Specifications PFC Packaging Solar converters Reel Size (mm) - Tape Width (mm) - Mid to high switching frequency converters Tube Type Basic Ordering Unit (pcs) 600 Packing Code C13 Marking RGWS60TS65D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES ±30 V TC = 25°C IC 51 A TC = 100°C IC 32 A ICP*1 90 A TC = 25°C IF 23 A TC = 100°C IF 13 A IFP*1 60 A TC = 25°C PD 156 W TC = 100°C PD 78 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 1/11 2021.08 - Rev.A Datasheet RGWS60TS65D lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.96 C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 2.88 C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Collector - Emitter Breakdown Voltage Symbol Conditions BVCES IC = 10μA, VGE = 0V Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = ±30V, VCE = 0V - - ±200 nA 5.0 6.0 7.0 V - 1.6 2.0 V - 2.0 - Gate - Emitter Threshold Voltage VGE(th) VCE = 5V, IC = 13.3mA IC = 30A, VGE = 15V, Collector - Emitter Saturation Voltage VCE(sat) Tj = 25°C Tj = 175°C www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 2/11 2021.08 - Rev.A Datasheet RGWS60TS65D lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input Capacitance Cies VCE = 30V, - 1680 - Output Capacitance Coes VGE = 0V, - 47 - Reverse transfer Capacitance Cres f = 1MHz - 31 - Total Gate Charge Qg VCE = 400V, - 58 - Gate - Emitter Charge Qge IC = 30A, - 12 - Gate - Collector Charge Qgc VGE = 15V - 24 - Turn - on Delay Time td(on) - 32 - - 12 - - 91 - - 46 - - 0.50 - tr Rise Time Turn - off Delay Time td(off) tf Fall Time IC = 30A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 25°C Inductive Load *Eon include diode reverse recovery Eon Turn - off Switching Loss Eoff - 0.45 - Turn - on Delay Time td(on) - 31 - - 13 - - 101 - - 74 - - 0.51 - - 0.56 - tr Turn - off Delay Time td(off) Fall Time tf Turn - on Switching Loss Eon Turn - off Switching Loss Eoff IC = 30A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175°C Inductive Load *Eon include diode reverse recovery nC ns Turn - on Switching Loss Rise Time pF mJ ns mJ IC = 90A, VCC = 520V Reverse Bias Safe Operating RBSOA VP = 650V, VGE = 15V Area RG = 100Ω, Tj = 175℃ www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 3/11 FULL SQUARE - 2021.08 - Rev.A Datasheet RGWS60TS65D lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Tj = 25°C - 1.45 1.9 Tj = 175°C - 1.4 - - 88 - ns - 5.9 - A - 0.28 - μC IF = 10A, Diode Forward Voltage VF V Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Energy Err - 17.6 - μJ Diode Reverse Recovery Time trr - 105 - ns Diode Peak Reverse Recovery Current Irr - 6.9 - A Diode Reverse Recovery Charge Qrr - 0.42 - μC Diode Reverse Recovery Energy Err - 28.8 - μJ www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. IF = 10A, VCC = 400V, diF/dt = 200A/μs, Tj = 25°C IF = 10A, VCC = 400V, diF/dt = 200A/μs, Tj = 175°C 4/11 2021.08 - Rev.A Datasheet RGWS60TS65D lElectrical Characteristic Curves Fig.1 Power Dissipation vs. Case Temperature 180 Fig.2 Collector Current vs. Case Temperature 60 50 140 Collector Current : IC [A] Power Dissipation : PD [W] 160 120 100 80 60 40 40 30 20 10 Tj ≤ 175ºC VGE ≥ 15V 20 0 0 0 25 50 0 75 100 125 150 175 Case Temperature : TC [°C ] 50 75 100 125 150 175 Case Temperature : TC [°C ] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 120 1000 1μs 100 100 Collector Current : IC [A] Collector Current : IC [A] 25 10μs 10 100μs 1 0.1 80 60 40 20 TC = 25ºC Single Pulse Tj ≤ 175ºC VGE = 15V 0 0.01 1 10 100 0 1000 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 200 400 600 800 Collector To Emitter Voltage : VCE [V] 5/11 2021.08 - Rev.A Datasheet RGWS60TS65D lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 90 90 Tｊ = 25ºC VGE = 20V 70 VGE = 15V 60 VGE = 12V 50 VGE = 10V 40 30 20 VGE = 8V 10 VGE = 20V 70 VGE = 15V 60 VGE = 12V 50 VGE = 10V 40 30 20 VGE = 8V 10 0 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE [V] 2 3 4 5 Fig.8 Typical Collector to Emitter Saturation Voltage vs. Junction Temperature 4 60 VGE = 15V Collector To Emitter Saturation Voltage : VCE(sat) [V] VCE = 10V 50 40 30 20 Tj = 175ºC 10 1 Collector To Emitter Voltage : VCE [V] Fig.7 Typical Transfer Characteristics Collector Current : IC [A] Tｊ = 175ºC 80 Collector Current : IC [A] Collector Current : IC [A] 80 IC = 60A 3 IC = 30A 2 IC = 15A 1 Tj = 25ºC 0 0 0 2 4 6 8 10 25 12 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 50 75 100 125 150 175 Junction Temperature : Tj [°C ] 6/11 2021.08 - Rev.A Datasheet RGWS60TS65D lElectrical Characteristic Curves Fig.9 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 20 Fig.10 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 20 Tj = 175ºC Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Tj = 25ºC IC = 60A 15 IC = 30A IC = 15A 10 5 0 IC = 60A 15 IC = 30A IC = 15A 10 5 0 5 10 15 20 5 Gate To Emitter Voltage : VGE [V] 20 Fig.12 Typical Switching Time vs. Gate Resistance 1000 Switching Time [ns] Switching Time [ns] 15 Gate To Emitter Voltage : VGE [V] Fig.11 Typical Switching Time vs. Collector Current 1000 tf 100 10 td(off) td(on) 10 tr td(off) 100 tf td(on) 10 tr VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load VCC = 400V, VGE = 15V, IC = 30A, Tj = 175ºC Inductive load 1 1 0 20 40 0 60 20 30 40 50 Gate Resistance : Rg [Ω] Collecter Current : IC [A] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 10 7/11 2021.08 - Rev.A Datasheet RGWS60TS65D lElectrical Characteristic Curves Fig.14 Typocal Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] Fig.13 Typical Switching Energy Losses vs. Collector Current 10 1 Eoff 0.1 Eon VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 1 Eoff Eon 0.1 VCC = 400V, IC = 30A, VGE = 15V, Tj = 175ºC Inductive load 0.01 0.01 0 20 40 0 60 Fig.15 Typical Capacitance vs. Collector to Emitter Voltage 10000 Capacitance [pF] 1000 Coes Cres f = 1MHz VGE = 0V Tj = 25ºC 1 0.01 30 40 50 Fig.16 Typical Gate Charge 15 Gate To Emitter Voltage : V GE [V] Cies 10 20 Gate Resistance : RG [Ω] Collecter Current : IC [A] 100 10 10 5 VCC = 400V IC = 30A Tj = 25ºC 0 0.1 1 10 100 0 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 20 40 60 Gate Charge : Qg [nC] 8/11 2021.08 - Rev.A Datasheet RGWS60TS65D lElectrical Characteristic Curves Fig.17 Typical Diode Forward Current vs. Forward Voltage 60 Fig.18 Typical Diode Revese Recovery Time vs. Forward Current Reverse Recovery Time : trr [ns] 200 Forward Current : IF [A] 50 40 Tj = 25ºC 30 Tj = 175ºC 20 10 0 150 Tj = 175ºC 100 Tj = 25ºC 50 VCC = 400V diF/dt = 200A/μs Inductive load 0 0 1 2 3 4 5 5 Forward Voltage : VF [V] 20 Fig.20 Typical Diode Rrverse Recovery Charge vs. Forward Current 1 Reverse Recovery Charge : Qrr [μC] Reverse Recovery Current : Irr [A] Tj = 175ºC Tj = 25ºC 5 15 Forward Current : IF [A] Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current 15 10 10 VCC = 400V diF/dt = 200A/μs Inductive load 0 0.8 0.6 Tj = 175ºC 0.4 0.2 Tj = 25ºC VCC = 400V diF/dt = 200A/μs Inductive load 0 5 10 15 20 5 Forward Current : IF [A] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 10 15 20 Forward Current : IF [A] 9/11 2021.08 - Rev.A Datasheet RGWS60TS65D lElectrical Characteristic Curves Fig.21 Typical IGBT Transient Thermal Impedance 1 Transient Thermal Impedance : Zθ(j-c) [°C/W] D = 0.5 0.2 0.1 0.1 PDM t1 0.01 0.05 0.01 0.02 0.001 1E-6 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC Single Pulse C1 405.6u 1E-5 1E-4 C2 1.968m 1E-3 C3 31.24m R1 268.4m 1E-2 R2 313.8m R3 17.52m 1E-1 1E+0 Pulse Width : t1 [s] Fig.22 Typical Diode Transient Thermal Impedance Transient Thermal Impedance : Zθ(j-c) [°C/W] 10 0.1 0.2 D = 0.5 1 0.1 PDM t1 0.01 0.02 0.01 0.05 0.001 1E-6 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC Single Pulse C1 298.1u 1E-5 1E-4 C2 1.532m 1E-3 C3 537.0u 1E-2 R1 556.6m R2 857.0m 1E-1 R3 394.4m 1E+0 Pulse Width : t1 [s] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 10/11 2021.08 - Rev.A Datasheet RGWS60TS65D ●Inductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. D.U.T. VGE 10% VG 90% IC 10% Fig.23 Inductive Load Circuit tr td(on) IF ton trr , Qrr td(off) tf toff VCE diF/dt 10% Irr Eon Fig.25 Diode Reverse Recovery Waveform www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. Eoff VCE(sat) Fig.24 Inductive Load Waveform 11/11 2021.08 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. R1107 B Datasheet General Precaution 1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents. ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s representative. 3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001