RP1E090RP

4V Drive Pch MOSFET RP1E090RP  Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) MPT6 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6). (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Package Code Basic ordering unit (pieces) RP1E090RP Type Taping TR 1000   Inner circuit (6) (5) (4) ∗2  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits 30 20 9 Unit V V A A A A W C C (1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg *1 36 1.6 36 2.0 150 55 to +150 *1 *2  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 62.5 Unit C / W www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.06 - Rev.A RP1E090RP  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 30 1.0 10 Typ. 13 18 21 3000 360 360 20 30 135 80 30 7 11 Max. 10 1 2.5 16.9 25.2 29.4 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=9A, VGS=10V m ID=9A, VGS=4.5V ID=9A, VGS=4.0V ID=9A, VDS=10V VDS=10V VGS=0V f=1MHz ID=4.5A, VDD 15V VGS=10V RL=3.3 RG=10 ID=9A VDD -15V VGS=5V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=9A, VGS=0V www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.06 - Rev.A RP1E090RP  Electrical characteristic curves 20 DRAIN CURRENT : -ID[A] 18 16 14 12 10 8 6 4 2 0 0 0.2 0.4 0.6 VGS= -2.8V VGS= -4.0V VGS= -3.4V VGS= -3.2V Ta=25°C Pulsed 0.8 1 VGS= -10V DRAIN CURRENT : -ID[A] VGS= -4.5V 20 18 16 14 12 10 8 6 4 2 0 0 2 4 　 Data Sheet 100 DRAIN CURRENT : -ID[A] VGS=-3.2V Ta=25°C Pulsed VDS= -10V Pulsed 10 1 VGS=-2.8V VGS= -10V VGS= -4.5V VGS= -4.0V VGS= -2.4V 6 8 10 0.1 Ta= 125℃ Ta= 75℃ Ta= 25℃ Ta= - 25℃ 0.01 0.001 0 1 2 3 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical output characteristics( Ⅱ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m ] 10 VGS= -4.0V VGS= -4.5V VGS= -10V 10 Ta= 125℃ Ta= 75℃ Ta= 25℃ Ta= - 25℃ 1 0.1 1 DRAIN CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m ] Ta=25°C Pulsed 100 VGS= -10V Pulsed 100 VGS= -4.5V Pulsed 10 Ta= 125℃ Ta= 75℃ Ta= 25℃ Ta= - 25℃ 1 0.1 1 DRAIN CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 10 1 0.1 1 DRAIN CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m ] FORWARD TRANSFER ADMITTANCE : |Yfs|[S] VGS= -4.0V Pulsed VDS= -10V Pulsed REVERSE DRAIN CURRENT : -Is [A] 100 100 100 VGS=0V Pulsed Ta= 125℃ Ta= 75℃ Ta= 25℃ Ta= - 25℃ 10 10 10 Ta= 125℃ Ta= 75℃ Ta= 25℃ Ta= - 25℃ 1 1 Ta= 125℃ Ta= 75℃ Ta= 25℃ Ta= - 25℃ 0.1 1 0.1 1 DRAIN CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain 10 0 0.1 1 DRAIN CURRENT : -ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current 0.01 0 0.2 0.4 0.6 0.8 1 1.2 10 SOURCE - DRAIN VOLTAGE : -VSD[V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/5 2010.06 - Rev.A RP1E090RP 　 10000 GATE-SOURCE VOLTAGE :-VGS [V] Ta=25°C Pulsed SWITCHING TIME : t [ns] 1000 td(off) tf 100 Ta=25C VDD= -15V VGS=-10V RG=10 Pulsed Data Sheet 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m ] 10 ID= -9.0A 50 ID= -4.5A Ta=25C VDD= -15V 8 ID=-9.0A RG=10 6 Pulsed 4 2 0 0 10 20 30 40 50 60 10 tr 1 td(on) 0 0 5 10 15 0.01 0.1 1 10 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT :ID[A] Fig.11 Switching 　Characteristics TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 10000 DRAIN CURRENT : ID (A) CAPACITANCE : C [pF] 1000 100 10 PW=1ms Operation in this area is limited by RDS(on) PW=100us Ciss 1000 Coss 1 0.1 0.01 DC operation Ta = 25C Single Pulse Mounted on a CERAMIC board PW = 10ms 100 Ta=25C f=1MHz VGS=0V 0.01 0.1 Crss 1 10 100 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Maximum Safe Operating Aera 10 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 1 0.1 Ta = 25℃ Single Pulse : 1Unit Rth（ch-a）（t） = ｒ（t）×Rth（ch-a） Rth（ch-a） = 62.5 ℃/W 0.01 0.1 1 10 100 1000 0.01 0.001 0.001 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.06 - Rev.A RP1E090RP  Measurement circuits 　 Pulse Width Data Sheet VGS ID RL D.U.T. VDS VGS 10% 50% 10% 90% 50% 10% 90% RG VDD VDS td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG ID VGS RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate Charge Waveform www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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