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RRH090P03TB1

RRH090P03TB1

  • 厂商:

    ROHM(罗姆)

  • 封装:

    SOT96-1

  • 描述:

    MOSFET P-CH 30V 9A 8SOIC

  • 数据手册
  • 价格&库存
RRH090P03TB1 数据手册
RRH090P03   Pch -30V -9A Power MOSFET    Datasheet l Outline VDSS -30V RDS(on)(Max.) 15.4mΩ ID ±9A PD 2W             SOP8                               l Inner circuit l Features 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). 4) Pb-free lead plating ; RoHS compliant l Packaging specifications Embossed Tape Packing l Application Type DC/DC Converter Reel size (mm) Tape width (mm) Basic ordering unit (pcs) Taping code Marking 330 12 2500 TB1 RRH090P03 l Absolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Symbol Value Unit VDSS ID*1 -30 V ±9 ±36 ±20 0.6 2 0.65 150 -55 to +150 A A V mJ W W ID,pulse*2 VGSS EAS*3 PD*4 PD*5 Tj Power dissipation Junction temperature Range of storage temperature Tstg ℃ ℃                                                                                                                                          www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001                RRH090P03          Datasheet                                     l Thermal resistance Parameter Symbol Thermal resistance, junction - ambient Values Unit Min. Typ. Max. RthJA*4 - - 62.5 ℃/W RthJA*5 - - 192 ℃/W l Electrical characteristics (T a = 25°C) Parameter Symbol Drain - Source breakdown voltage Breakdown voltage temperature coefficient Conditions V(BR)DSS VGS = 0V, ID = -1mA  ΔV(BR)DSS  ID = -1mA    ΔTj     referenced to 25℃ Values Unit Min. Typ. Max. -30 - - V - -25 - mV/℃ Zero gate voltage drain current IDSS VDS = -30V, VGS = 0V - - -1 μA Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V - - ±10 μA VGS(th) VDS = -10V, ID = -1mA -1.0 - -2.5 V - 3.9 - mV/℃ VGS = -10V, ID = -9A - 11 15.4 VGS = -4.5V, ID = -4.5A - 15 21 VGS = -4V, ID = -4.5A - 17 24 VGS = , ID = - - - RG f = 1MHz, open drain - 3.0 - Ω |Yfs| *6 VDS = -10V, ID = -9A 10 20 - S Gate threshold voltage Gate threshold voltage temperature coefficient  ΔVGS(th)   ID = -1mA    ΔTj     referenced to 25℃ Static drain - source on - state resistance Gate input resistance Forward Transfer Admittance RDS(on)*6 mΩ *1 Limited only by maximum temperature allowed. *2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L ⋍ 10μH, V DD = -15V, RG = 25Ω, starting Tj = 25°C *4 Mounted on a ceramic board (30×30×0.8mm) *5 Mounted on a FR4 (20×20×0.8mm)                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/11                                              20150730 - Rev.001 RRH090P03                 Datasheet l Electrical characteristics (Ta = 25°C) Parameter Symbol Values Conditions Unit Min. Typ. Max. Input capacitance Ciss VGS = 0V - 3000 - Output capacitance Coss VDS = -10V - 360 - Reverse transfer capacitance Crss f = 1MHz - 360 - VDD ⋍ -15V,VGS = -10V - 20 - tr*6 ID = -4.5A - 30 - td(off)*6 RL ⋍ 3.3Ω - 135 - tf*6 RG = 10Ω - 80 - Turn - on delay time Rise time Turn - off delay time Fall time td(on)*6 pF ns l Gate charge characteristics (Ta = 25°C) Parameter Total gate charge Symbol V GS = -10V Qg*6 Gate - Source charge Qgs*6 Gate - Drain charge Qgd*6 Values Conditions VDD ⋍ -15V ID = -9A V GS = -5V Unit Min. Typ. Max. - 56 - - 30 - - 7 - - 11 - nC l Body diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Values Conditions Unit Min. Typ. Max. Ta = 25℃ - - -1.6 A VSD*6 VGS = 0V, IS = -9A - - -1.2 V Reverse recovery time trr*6 - 35 70 ns Reverse recovery charge Qrr*6 IS = -9A, VGS=0V di/dt = 100A/μs - 30 60 μC Inverse diode continuous, forward current Forward voltage IS*1                                                     www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/11                                        20150730 - Rev.001 RRH090P03                 Datasheet l Electrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Normalized Transient Thermal          Resistance vs. Pulse Width Fig.4 Single Pulse Maximum Power          dissipation                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 4/11 20150730 - Rev.001 RRH090P03                 Datasheet l Electrical characteristic curves Fig.5 Avalanche Current vs. Inductive Load Fig.6 Avalanche Energy Derating Curve          vs. Junction Temperature Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II)                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 5/11 20150730 - Rev.001 RRH090P03                 Datasheet l Electrical characteristic curves Fig.9 Breakdown Voltage vs. Junction  Temperature Fig.10 Typical Transfer Characteristics Fig.11 Gate Threshold Voltage vs.  Junction Temperature Fig.12 Transconductance vs. Drain Current                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 6/11 20150730 - Rev.001 RRH090P03                 Datasheet l Electrical characteristic curves Fig.13 Drain Current Derating Curve Fig.14 Static Drain - Source On - State  Resistance vs. Gate Source Voltage Fig.15 Static Drain - Source On - State  Resistance vs. Junction Temperature Fig.16 Static Drain - Source On - State  Resistance vs. Drain Current(I)                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 7/11 20150730 - Rev.001 RRH090P03                 Datasheet l Electrical characteristic curves Fig.17 Static Drain - Source On - State  Resistance vs. Drain Current(II) Fig.18 Static Drain - Source On - State  Resistance vs. Drain Current(III) Fig.19 Static Drain - Source On - State  Resistance vs. Drain Current(IV)                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 8/11 20150730 - Rev.001 RRH090P03                 Datasheet l Electrical characteristic curves Fig.20 Typical Capacitance vs. Drain  Source Voltage Fig.21 Switching Characteristics Fig.22 Dynamic Input Characteristics Fig.23 Source Current vs. Source Drain  Voltage                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 9/11 20150730 - Rev.001 RRH090P03                 Datasheet l Measurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform                                                         www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10/11 20150730 - Rev.001 RRH090P03                 Datasheet l Dimensions                                                                                             www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 11/11 20150730 - Rev.001
RRH090P03TB1 价格&库存

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RRH090P03TB1
    •  国内价格 香港价格
    • 1+10.499421+1.27008
    • 10+7.8745710+0.95256
    • 50+5.2497150+0.63504
    • 100+4.19653100+0.50764
    • 500+3.93729500+0.47628
    • 1000+3.783361000+0.45766
    • 2000+3.726652000+0.45080
    • 4000+3.702344000+0.44786

    库存:1210

    RRH090P03TB1
      •  国内价格 香港价格
      • 2500+4.075932500+0.48965
      • 5000+3.973365000+0.47733
      • 7500+3.803537500+0.45693
      • 10000+3.6337010000+0.43653

      库存:15000