RSQ015P10

Data Sheet 4V Drive Pch MOSFET RSQ015P10  Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) TSMT6 Features 1) Low on-resistance. 2) Low voltage drive(4V). 3) Small surface mount package (TSMT6). Abbreviated symbol : ZN  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RSQ015P10 Taping TR 3000   Inner circuit (6) (5) (4) ∗2 ∗1 (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Limits 100 20 1.5 Unit V V A A A A W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP IS ISP PD Tch Tstg *1 6.0 1.0 6.0 1.25 150 55 to 150 *1 *2  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 100 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A RSQ015P10  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * Min. 100 1.0 1.5 Typ. 350 380 400 950 45 20 10 15 60 10 17.0 4.5 5.0 Max. 10 1 2.5 470 510 540 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, V GS=0V VDS=100V, VGS=0V VDS=10V, ID=1mA ID=1.5A, VGS=10V m  ID=0.75A, VGS=4.5V ID=0.75A, VGS=4.0V VDS=10V, ID=1.5A VDS=25V VGS=0V f=1MHz VDD 50V, ID=0.75A VGS=10V RL=66 RG=10 VDD 50V, ID=1.5A VGS=5V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions VGS=0V, Is=1.5A www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A RSQ015P10 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 1.5 VGS=-10.0V VGS=-4.5V VGS=-4.0V Drain Current : -ID [A] 1 VGS=-2.8V 　 Data Sheet Fig.2 Typical Output Characteristics ( Ⅱ) 1.5 VGS=-10.0V VGS=-4.5V VGS=-4.0V Drain Current : -ID [A] 1 VGS=-2.8V Ta=25℃ Pulsed VGS=-2.5V 0.5 0.5 VGS=-2.5V Ta=25℃ Pulsed 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : -VDS [V] 0 0 2 4 6 8 10 Drain-Source Voltage : -VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 Ta=25℃ Pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=-4.0V VGS=-4.5V VGS=-10V 10000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current VGS=-10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta= 125℃ Ta= 75°C Ta= 25°C Ta= -25°C 1000 100 100 0.01 0.1 1 10 10 0.01 0.1 1 10 Drain Current : -ID [A] Drain Current : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 10000 VGS=-4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta= 125℃ Ta= 75°C Ta= 25°C Ta= -25°C Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 10000 Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=-4V pulsed Ta= 125℃ Ta= 75°C Ta= 25°C Ta= -25°C 1000 1000 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 Drain Current : -ID [A] Drain Current : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.08 - Rev.A RSQ015P10 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 10 VDS=-10V pulsed 10 VDS=-10V pulsed Fig.8 Typical Transfer Characteristics Forward Transfer Admittance Yfs [S] 1 1 Drain Currnt : -ID [A] Ta= 125℃ Ta= 75°C Ta= 25°C Ta= -25°C 0.1 Ta= 125℃ Ta= 75°C Ta= 25°C Ta= -25°C 0.1 0.01 0.01 0.001 0.001 0.01 0.1 Drain Current : -ID [A] 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-Source Voltage : -VGS [V] Fig.9 Source Current vs. Source-Drain Voltage 10 VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 800 Ta=25℃ Pulsed ID=-0.75A ID=-1.5A 700 Source Current : -Is [A] 1 Ta= 125℃ Ta= 75°C Ta= 25°C Ta= -25°C 600 500 400 0.1 300 200 0.01 0.0 0.5 1.0 1.5 2.0 Source-Drain Voltage : -VSD [V] 100 0 2 4 6 8 10 Gate-Source Voltage : -VGS [V] Fig.11 Switching Characteristics 10000 VDD≒-50V VGS=-10V RG=10Ω Ta=25°C Pulsed tf td(off) 10 Ta=25°C VDD=-50V ID=-1.5A Pulsed Fig.12 Dynamic Input Characteristics 8 Gate-Source Voltage : -VGS [V] 1000 Switching Time : t [ns] 6 100 4 10 tr td(on) 1 0.01 0.1 1 10 Drain Current : -ID [A] 2 0 0 5 10 15 20 25 30 35 Total Gate Charge : -Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.08 - Rev.A RSQ015P10 　 Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 10000 Normalized Transient Thermal Resistance : r（t） Ta=25°C f=1MHz VGS=0V 1000 Capacitance : C [pF] Ciss Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Ta=25°C Single Pulse 1 100 0.1 Coss 10 Crss 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=100°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 1 0.01 0.1 1 10 100 1000 Drain-Source Voltage : -VDS [V] Pulse width : Pw (s) Fig.15 Maximum Safe Operating Area 10 Operation in this area is limited by RDS(on) (VGS = -10V) PW = 100μs Drain Current : -ID [ A ] 1 PW = 1ms 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.01 0.1 1 10 PW = 10ms DC Operation 100 1000 Drain-Source Voltage : -VDS [ V ] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.08 - Rev.A RSQ015P10  Measurement circuits 　 Data Sheet Pulse width ID VGS RL D.U.T. RG VDD VDS VGS 10% 50% 10% 90% 50% 10% 90% VDS 90% td(on) ton tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG ID VGS RL IG(Const.) D.U.T. VDD VDS VGS Qgs Qg Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.08 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A