SIM-22ST_10

Infrared light emitting diode, side-view type SIM-22ST The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens. Applications Light source for sensors Features 1) Compact package (4.7x4.6 mm) with lens. 2) High efficiency, high output. 3) Emission spectrum well suited to silicon detectors (P = 950 nm). 4) Good current-optical output linearity. 5) Long life, high reliability. Dimensions (Unit : mm) 2.54 ± 0.1 Notes: 1. Tolerances are ± 0.2 unless otherwise indicated. 2. Value in parenthese is size at base of leads. 1.0 4.1 Gate remainder 0.3Max. 4.6 ± 0.1 1.8 ± 0.05 1.9 0.15 R0.5 R0.75 2-C0.7 1.5 4.7 ± 0.1 2.8 2−0.65 2−0.45 R0.5 1 (2.54) 2 0.64 1 Cathode 12Min. 1.0 0.40 2 Anode Absolute maximum ratings (Ta=25C) Parameter Forward current Reverse voltage Power dissipation Pulse forward current Operating temperature Storage temperature Symbol IF VR PD IFP∗ Topr Tstg Limits 50 5 80 0.5 −25 to +85 −30 to +100 Unit mA V mW A °C °C ∗ Pulse width = 0.1ms, duty ratio 1% Electrical and optical characteristics (Ta=25C) Parameter Emitting strength Emitting strength Forward voltage Reverse current Peak light emitting wavelength Spectral line half width Half-viewing angle Response time Cut-off frequency Symbol IE IE VF IR λP Δλ θ1/2 tr fc tf Min. − 0.48 − − − − − − − Typ. 0.8 1.3 1.3 − 950 40 Max. − 1.94 1.6 10 − − − − − Unit mW/sr mA V μA nm nm deg μs MHz IF=10mA IF=10mA∗ IF=50mA VR=5V IF=10mA IF=20mA IF=50mA IF=50mA IF=50mA Conditions ±30 1.0 1.0 ∗ According to our measurement procedures. www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 1/2 2010.06 - Rev.B SIM-22ST Electrical and optical characteristic curves 70 Data Sheet 14 EMITTING STRENGTH I : IE (mW / Sr) FORWARD CURRENT : IF (mA) FORWARD CURRENT : IF (mA) 50 60 50 40 30 20 10 0 0 −25°C 0°C 25°C 50°C 75°C 12 10 8 6 4 2 0 0 40 30 20 10 0 −20 0 20 40 60 80 100 AMBIENT TEMPERATURE : Ta(°C) 0.4 0.8 1.2 1.6 10 20 30 40 50 FORWARD VOLTAGE : VF (V) FORWARD CURRENT : IF(mA) Fig.1 Forward current falloff Fig.2 Forward current vs. forward voltage Fig.3 Emitting strength vs. forward current RELATIVE EMITTING STRENGTH : IE (%) 100 200 RELATIVE OPTICAL OUTPUT : PO (%) 80 100 60 50 40 20 20 10 −25 0 25 50 75 100 0 900 920 940 960 980 1000 AMBIENT TEMPERATURE : Ta (°C) OPTICAL WAVELENGTH : λ (nm) Fig.4 Relative emitting strength vs. ambient temperature Fig.5 Wavelength 20° 30° 40° 50° 10° 0° 100 RELATIVE EMITTING STRENGTH (%) 80 60 60° 70° 80° 90° 100 40 20 80 60 40 20 0 0 10° 20° 30° 40° 50° 60° 70° 80° 90° ANGULAR DISPLACEMENT : θ (deg) RELATIVE EMITTING STRENGTH (%) Fig. 6 Directional pattern www.rohm.com c ○ 2010 ROHM Co., Ltd. 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