TT8U2

Data Sheet 1.5V Drive Pch +SBD MOSFET TT8U2  Structure Silicon P-channel MOSFET / schottky barrier diode  Features 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance. 3) Low voltage drive(1.5V). 4) Built in Low IR shottky barierr daiode.  Applications Switching  Packaging specifications Type TT8U2 Package Code Basic ordering unit (pieces) Taping TCR 3000  Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : U02  Inner circuit (8) (7) (6) (5)  Absolute maximum ratings (Ta = 25 C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Channel temperature Power dissipation *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Limits 20 10 2.4 9.6 0.8 9.6 150 1.0 Unit V V A A A A C W / ELEMENT (1) ANODE (2) ANODE (3) SOURCE (4) GATE (5) DRAIN (6) DRAIN (7) CATHODE (8) CATHODE ∗1 (1) (2) (3) (4) Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP IS *1 ISP Tch *2 PD ∗1 BODY DIODE Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation *1 60Hz / 1Cycle *2 Mounted on a ceramic board Symbol VRM VR IF *1 IFSM Tj PD*2 Limits 30 20 1.0 3.0 150 1.0 Unit V V A A C W / ELEMENT Parameter Total power dissipation Range of Storage temperature * Mounted on a ceramic board Symbol PD* Tstg Limits 1.25 55 to 150 Unit W / TOTAL C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.04 - Rev.A TT8U2  Electrical characteristics (Ta=25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Data Sheet Symbol IGSS IDSS VGS (th) * RDS (on) Min. 20 0.3 2.4 - Typ. 80 105 150 180 850 60 50 9 25 55 45 6.7 1.7 0.6 Max. 100 1 1.0 105 140 225 360 - Unit nA V A V Conditions VGS=10V, VDS=0V ID=1mA, VGS=0V VDS=20V, VGS=0V VDS=10V, ID=1mA Drain-source breakdown voltage V(BR)DSS m ID=2.4A, VGS=4.5V m ID=1.2A, VGS=2.5V m ID=1.2A, VGS=1.8V m ID=0.5A, VGS=1.5V S pF pF pF ns ns ns ns nC nC nC VDS=10A, ID=2.4V VDS=10V VGS=0V f=1MHz VDD 10V,VGS=4.5V ID=1.2A, RL 8.3 RG=10 VDD 10V,VGS=4.5V ID=2.4A, RL 4.2,RG=10 l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd *  Body diode(source-drain) (Ta=25˚C) Parameter Forward Voltage *Pulsed Symbol VSD Min. - Typ. - Max. 1.2 Unit V Conditions Is=2.4A, VGS=0V Parameter Forward Voltage drop Reverse leakage Symbol VF IR Min. Typ. 0.48 Max. 0.52 10 Unit V A Conditions IF=1.0A VR=10V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.04 - Rev.A TT8U2 Electrical characteristic curves (Ta=25C) 　 Data Sheet 10 Ta=25°C Pulsed VGS= -4.5V VGS= -2.5V VGS= -1.8V 4 10 DRAIN CURRENT : -ID[A] Ta=25°C VGS= -4.5V Pulsed VGS= -2.5V VGS= -1.8V 10 VDS= -10V Pulsed DRAIN CURRENT : -ID[A] 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 8 DRAIN CURRENT : -ID[A] 8 6 6 0.1 4 VGS= -1.5V 2 VGS= -1.5V 0 0 0.2 0.4 0.6 0.8 1 2 0.01 0 0 2 4 6 8 10 0.001 0 0.5 1 1.5 2 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics(Ⅰ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical output characteristics(Ⅱ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 Ta=25°C Pulsed VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS= -4.5V Pulsed 1000 VGS= -2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 100 100 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 10 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 VGS= -1.8V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 VGS= -1.5V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 10 VDS= -10V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 10 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Ta=-25°C Ta=25°C Ta=75°C Ta=125°C 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 10 0.1 0.1 1 DRAIN-CURRENT : -ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.04 - Rev.A TT8U2 　 Data Sheet REVERSE DRAIN CURRENT : -Is [A] 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS=0V Pulsed 1 250 10000 Ta=25°C Pulsed ID= -1.2A 200 SWITCHING TIME : t [ns] 1000 tf td(off) 150 ID= -2.4A 100 Ta=25°C VDD= -10V VGS= -4.5V RG=10Ω Pulsed 0.1 0.01 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 10 tr td(on) 0.1 1 10 50 0.001 0 0.5 1 1.5 0 0 2 4 6 8 10 1 0.01 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : -VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -ID[A] Fig.12 Switching Characteristics GATE-SOURCE VOLTAGE : -VGS [V] 5 10000 Ta=25°C f=1MHz VGS=0V 1000 Coss Ciss 3 2 1 Ta=25°C VDD= -10V ID= -2.4A RG=10Ω Pulsed 0 2 4 6 8 CAPACITANCE : C [pF] 4 100 Crss 10 0.01 0.1 1 10 100 0 TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : -VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage 100000 pulsed 1 pulsed REVERSE CURRENT : IR[mA] 1000 100 10 1 Ta= -25°C 0.1 0.01 0 5 10 15 20 25 30 Ta = 75°C FORWARD CURRENT : IF[A] 10000 Ta = 125°C 0.1 Ta = 25°C 0.01 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.001 0 100 200 300 400 500 600 REVERSE VOLTAGE : VR [V] Fig.1 Reverse Current vs. Reverse Voltage FORWARD VOLTAGE : VF[mV] Fig.2 Forward Current vs. Forward Voltage www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.04 - Rev.A TT8U2  Measurement circuits Pulse Width Data Sheet VGS ID RL D.U.T. VDS VGS 10% 50% 10% 90% 50% 10% 90% RG VDD VDS td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. RG VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice 1. SBD has a large reverse leak current compared to other type of diode. Therefore ; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low V F characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A