JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
2SD1899
TRANSISTOR (NPN)
TO-252-2L
FEATURES
z Low VCE(sat)
z High Transition Frequency
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
3
A
PC
Collector Power Dissipation
1
W
Thermal Resistance From Junction To Ambient
125
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA,IC=0
7
V
Collector cut-off current
ICBO
VCB=60V,IE=0
10
μA
Emitter cut-off current
IEBO
VEB=7V,IC=0
10
μA
DC current gain
hFE(1)*
VCE=2V, IC=0.2A
60
*
hFE(2)
VCE=2V, IC=0.6A
100
VCE=2V, IC=2A
50
hFE(3)*
400
Collector-emitter saturation voltage
VCE(sat)
*
IC=1.5A,IB=0.15A
0.25
V
Base-emitter saturation voltage
*
VBE(sat)
IC=1.5A,IB=0.15A
1.2
V
Cob
Collector output capacitance
fT
Transition frequency
VCB=10V,IE=0, f=1MHz
30
pF
VCE=5V,IC=1.5A
120
MHz
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE(2)
RANK
M
L
K
RANGE
100-200
160-320
200-400
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1
D,Mar,2016
Typical Characteristics
Static Characteristic
COMMON
EMITTER
Ta=25℃
COMMON EMITTER
VCE= 2V
9.0mA
8.1mA
1500
7.2mA
hFE
(mA)
IC
COLLECTOR CURRENT
hFE —— IC
400
6.3mA
DC CURRENT GAIN
2000
5.4mA
4.5mA
1000
3.6mA
2.7mA
500
Ta=100℃
300
Ta=25℃
200
100
1.8mA
IB=0.9mA
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE
1200
VBEsat ——
5
VCE
0
0.01
6
IC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
Ta=25℃
Ta=100℃
600
0.1
1
COLLECTOR CURRENT
1000
Cob / Cib
——
IC
Ta=25℃
(pF)
C
CAPACITANCE
Cob
1
REVERSE VOLTAGE
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Ta=25℃
0.01
0.1
PC
1.2
10
1
0.1
Ta=100℃
1
——
IC
3
(A)
Ta
f=1MHz
IE=0 / IC=0
Cib
100
3
IC
COLLECTOR CURRENT
VCB / VEB
1
(A)
100
10
3
IC
β=10
(A)
COLLECTOR POWER DISSIPATION
PC (W)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
1000
400
0.01
VCEsat ——
1000
β=10
800
0.1
COLLECTOR CURRENT
(V)
10
V
1.0
0.8
0.6
0.4
0.2
0.0
20
0
(V)
2
25
50
75
AMBIENT TEMPERATURE
100
Ta
(℃ )
125
150
D,Mar,2016
Symbol
A
A1
B
b
c
c1
D
D1
E
e
e1
M
N
L
L1
L2
V
ĭ
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Dimensions In Millimeters
Max.
Min.
2.380
2.200
0.000
0.100
0.800
1.400
0.710
0.810
0.460
0.560
0.460
0.560
6.500
6.700
5.130
5.460
6.000
6.200
2.286 TYP.
4.327
4.727
1.778REF.
0.762REF.
9.800
10.400
2.9REF.
1.400
1.700
4.830 REF.
3
Dimensions In Inches
Min.
Max.
0.087
0.094
0.000
0.004
0.031
0.055
0.028
0.032
0.018
0.022
0.018
0.022
0.256
0.264
0.202
0.215
0.236
0.244
0.090 TYP.
0.170
0.186
0.070REF.
0.018REF.
0.386
0.409
0.114REF.
0.055
0.067
0.190 REF.
D,Mar,2016
To-252(4R)-2L Tape and Reel
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4
D,Mar,2016
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