D882-TU

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) TO-126 FEATURES Power Dissipation 1. EMITTER 2. COLLECTOR 3. BASE  Equivalent Circuit D882 'HYLFHFoGH Solid dot = Green molding compound device, if none, the normal device ;; &ode D882 zXX ORDERING INFORMATION Package Packing Method Pack Quantity D882 TO-126 Bulk 200pcs/Bag D882-TU TO-126 Tube 60pcs/Tube Part Number MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 1.25 W -55-150 ℃ TJ,Tstg www.jscj-elec.com Operation Junction and Storage Temperature Range 1 Rev. - 2.0  Ta =25 Я unless otherwise specified Symbol Parameter Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V Collector cut-off current ICBO VCB= 40 V, IE=0 1 µA Collector cut-off current ICEO VCE= 30 V, IB=0 10 µA Emitter cut-off current IEBO VEB= 6 V, IC=0 1 µA DC current gain hFE VCE= 2 V, IC= 1A 60 400 Collector-emitter saturation voltage VCE (sat) IC= 2A, IB= 0.2 A 0.5 V Base-emitter saturation voltage VBE (sat) IC= 2A, IB= 0.2 A 1.5 V fT Transition frequency VCE= 5V, IC=0.1A 90 f =10MHz MHz CLASSIFICATION OF hFE Rank R O Y GR Range 60-120 100-200 160-320 200-400 www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics IC 2.5 VCE —— COMMON EMITTER Ta=25 ℃ IC Ta=100℃ 7mA IC —— hFE 8mA 2.0 DC CURRENT GAIN (A) 10mA 9mA COLLECTOR CURRENT hFE 1000 6mA 1.5 5mA 4mA 1.0 3mA Ta=25℃ 100 2mA 0.5 COMMON EMITTER VCE= 2V IB=1mA 0.0 10 0 1 2 3 4 5 6 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— 8 9 1 VCE (V) IC 100 VBEsat —— 2000 100 Ta=100 ℃ 10 10 1000 COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 1000 7 Ta=25℃ IC IC 1000 Ta=25℃ Ta=100 ℃ β=10 β=10 1 100 1 10 100 COLLECTOR CURREMT IC 3000 —— 1000 IC 1 3000 10 100 COLLECTOR CURREMT (mA) Cob/Cib VBE —— 1000 IC 3000 (mA) VCB/VEB 500 f=1MHz IE=0/IC=0 1000 Cib (pF) (mA) Ta=25 ℃ 100 CAPACITANCE 100 T= a 25 ℃ T= a 10 0℃ C IC COLLECTOR CURRENT 3000 (mA) 10 Cob COMMON EMITTER VCE= 2V 10 0.1 1 0 300 600 900 1200 PC COLLECTOR POWER DISSIPATION PC (mW) 1400 —— 1 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (mV) 10 V 20 (V) Ta 1200 1000 800 600 400 200 0 0 25 50 75 AMBIENT TEMPERATURE www.jscj-elec.com 100 Ta 125 150 (℃ ) 3 Rev. - 2.0 TO-126 Package Outline Dimensions Symbol A A1 b b1 c D E e e1 h L L1 P Φ www.jscj-elec.com Dimensions In Millimeters Min Max 2.900 2.500 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290 TYP 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 4 Dimensions In Inches Min Max 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 0.090 TYP 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 Rev. - 2.0