MPSA06

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 MPSA06 TRANSISTOR (NPN) 1. EMILTTER FEATURES 3RZHUDPSOLILHU 2. BASE 3. COLLECTOR 1  MPS23 444 Equivalent Circuit 036$ 'HYLFHFRGH  6ROLGGRW *UHHQPROGLQJFRPSRXQGGHYLFH LIQRQHWKHQRUPDOGHYLFH ;;; &RGH &('  ,& &  "  ! "-.* "-.* "-./  036$ 72 %XON 1000pcs/Bag 036$7$  72 Tape 2000pcs/Box     #  Collector-Base Voltage 80 V #$'&  Collector-Emitter Voltage 80 V #'%&  Emitter-Base Voltage 4 V $  Collector Current -Continuous 0.5 A Collector Power Dissipation 625 mW  Thermal Resistance I rom Junction Wo Ambient  200  /W  !  #$%&  "(   ș +  TJ,T*  www.jscj-elec.com "  Operation Junction and Storage Temperature Range 1 -55 a  Rev. - 2.0 '5'$ $5$6$ ' $ Ta =25  unless otherwise specified Parameter Symbol Test conditions M  M4 U Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 4 V Collector cut-off current ICBO VCB=80V, IE=0 0.1 A Collector cut-off current ICEO VCE=60V, IB=0 0.1 A Emitter cut-off current IEBO VEB=3V, IC=0 0.1 A hFE1 VCE=1V, IC= 100mA 100 hFE2 VCE=1V, IC= 10mA 100 400 DC current gain Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.25 V Base-emitter saturation voltage VBE(sat) IC= 100mA, IB=10mA 1.2 V Transition frequency www.jscj-elec.com fT 2 VCE=2V, IC= 10mA f = 100MHz 100 MHz Rev. - 2.0 Typical Characteristics hFE Static Characteristic 3 .0 mA .7mA 2 m 2.4 A COLLECTOR CURRENT IC (mA) 1.8mA 200 1.5mA 150 1.2mA 100 0.9mA Ta=100ć 100 Ta=25ć 0.6mA 50 IB=0.3mA 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE VBEsat 1200 —— 10 0.4 5 VCEsat IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 300 1 10 COLLECTOR CURRENT COLLECTOR CURRENT IC (mA) IC —— IC Ta=25ć 1 fT 1000 Ta=25ć 1 400 600 800 —— 100 30 10 COLLECTOR POWER DISSIPATION PC (mW) CAPACITANCE C (pF) Cob 10 1 REVERSE VOLTAGE PC 750 Cib 100 10 V 100 —— Ta 625 500 375 250 125 0 40 0 25 50 75 AMBIENT TEMPERATURE (V) 3 (mA) Ta=25ć VCB/ VEB Ta=25ć IC 500 IC —— COLLECTOR CURRENT f=1MHz IE=0/IC=0 (mA) 300 10 2.5 1000 IC COMMON EMITTER VCE= 2V BASE-EMMITER VOLTAGE VBE (mV) Cob/ Cib 100 COLLECTOR CURRENT VBE Ta=100ć 10 (mA) 100 www.jscj-elec.com IC Ta=100ć COMMON EMITTER VCE=1V 1 0.1 500 (mA) 100 10 500 100 TRANSITION FREQUENCY fT (MHz) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Ta=100ć 1000 —— IC ȕ=10 600 0.1 200 100 1000 Ta=25ć 10 10 COLLECTOR CURRENT 900 500 1 (V) VCE ȕ=10 0 IC COMMON EMITTER VCE=1V COMMON EMITTER Ta=25ć 2.1mA 250 0 —— 1000 DC CURRENT GAIN hFE 300 100 Ta 125 150 (ć ) Rev. - 2.0  &9:"-.*&(   ! A A1 b c D D1 E e e1 L  h (   ( -  4  4 3.300 3.700 0.130 0.146 1.100 1.400 0.043 0.055 0.380 0.550 0.015 0.022 0.360 0.510 0.014 0.020 4. 4.700 3.430 0.135 4.300 4.700 0.169 0.185 1.270 TYP 0.050 TYP 2.440 2.640 0.096 0.104 14.100 14.500 0.555 0.571 1.600 0.063 0.000 0.380 0.000 0.015 &9:**"5 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0  &9:7DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.0