PBSS4480X,135

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4480X 80 V, 4 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2004 Aug 5 2004 Oct 25 NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X FEATURES QUICK REFERENCE DATA • High hFE and low VCEsat at high current operation SYMBOL • High collector current capability: IC maximum 4 A VCEO collector-emitter voltage 80 V IC collector current (DC) 4 A ICM peak collector current 10 A RCEsat equivalent on-resistance 54 mΩ • High efficiency leading to less heat generation. APPLICATIONS • Medium power peripheral drivers; e.g. fan, motor PARAMETER MAX. UNIT • Strobe flash units for DSC and mobile phones PINNING • Inverter applications; e.g. TFT displays • Power switch for LAN and ADSL systems PIN DESCRIPTION • Medium power DC-to-DC conversion 1 emitter • Battery chargers. 2 collector 3 base DESCRIPTION NPN low VCEsat transistor in a SOT89 (SC-62) plastic package. PNP complement: PBSS5480X. 2 MARKING 3 MARKING CODE(1) TYPE NUMBER PBSS4480X 1 *1Y 3 Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. 2 1 sym042 Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4480X 2004 Oct 25 − DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads 2 VERSION SOT89 NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 80 V VCEO collector-emitter voltage open base − 80 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) note 4 − 4 A ICRM repetitive peak collector current tp ≤ 10 ms; δ ≤ 0.1 − 6 A ICM peak collector current t = 1 ms or limited by Tj(max) − 10 A IB base current (DC) − 1 A IBM peak base current t ≤ 300 μs − 2 A Ptot total power dissipation Tamb ≤ 25 °C notes 1 and 2 − 2.5 W note 2 − 550 mW note 3 − 1 W note 4 − 1.4 W note 5 − 1.6 W Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Notes 1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 2004 Oct 25 3 NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X 001aaa229 1600 (1) Ptot (mW) 1200 (2) 800 (3) 400 0 −50 0 50 100 150 200 Tamb (°C) (1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4; standard footprint. Fig.2 Power derating curves. 2004 Oct 25 4 NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS VALUE UNIT 50 K/W note 2 225 K/W note 3 125 K/W note 4 90 K/W note 5 80 K/W 16 K/W thermal resistance from junction in free air to ambient notes 1 and 2 Rth(j-s) thermal resistance from junction to soldering point Notes 1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 006aaa232 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) 10 (7) (8) (9) 1 10−1 10−5 (10) 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Oct 25 5 NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X 006aaa233 103 Zth (K/W) (1) 102 (2) (3) (5) (4) (6) 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 006aaa234 103 Zth (K/W) 102 (1) (2) (3) (4) 10 (5) (6) (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.5 Transient thermal impedance as a function of pulse time; typical values. 2004 Oct 25 6 NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = 80 V; IE = 0 A − − 100 nA VCB = 80 V; IE = 0 A; Tj = 150 °C − − 50 μA ICES collector-emitter cut-off current VCE = 80 V; VBE = 0 V − − 100 nA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A − − 100 nA hFE DC current gain VCE = 2 V; IC = 0.5 A 250 400 − − VCE = 2 V; IC = 1 A; note 1 250 400 − − VCE = 2 V; IC = 2 A; note 1 175 270 − − VCE = 2 V; IC = 4 A; note 1 80 140 − − VCEsat collector-emitter saturation voltage IC = 0.5 A; IB = 50 mA − 25 40 mV IC = 1 A; IB = 50 mA − 55 80 mV IC = 2 A; IB = 40 mA − 110 160 mV IC = 4 A; IB = 200 mA; note 1 − 170 230 mV IC = 5 A; IB = 500 mA; note 1 − 200 270 mV RCEsat equivalent on-resistance IC = 5 A; IB = 500 mA; note 1 − 40 54 mΩ VBEsat base-emitter saturation voltage IC = 0.5 A; IB = 50 mA − 0.78 0.85 V IC = 1 A; IB = 50 mA − 0.79 0.9 V IC = 1 A; IB = 100 mA; note 1 − 0.82 0.95 V IC = 4 A; IB = 400 mA; note 1 − 0.95 1.05 V VBEon base-emitter turn-on voltage IC = 2 A; VCE = 2 V − 0.78 0.85 V fT transition frequency IC = 100 mA; VCE = 10 V; f = 100 MHz 120 150 − MHz Cc collector capacitance IE = ie = 0 A; VCB = 10 V; f = 1 MHz − 35 50 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2004 Oct 25 7 NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X 001aaa734 1000 hFE 001aab057 1.2 (1) VBE (V) 800 (2) 0.8 (1) 600 (2) 400 (3) (3) 0.4 200 0 10−1 1 10 102 0 10-1 103 104 IC (mA) 10 102 103 104 IC (mA) VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. VCE = 2 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 1 DC current gain as a function of collector current; typical values. Fig.7 001aaa737 103 Base-emitter voltage as a function of collector current; typical values. 001aaab059 1 VCEsat (mV) VCEsat (V) 102 10-1 (1) (2) (3) (1) (2) 10-2 10 (3) 1 10−1 1 10 102 10-3 10-1 103 104 IC (mA) 1 (1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.8 Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Oct 25 8 10 102 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X 001aaa736 1.2 001aaa738 103 RCEsat (Ω) VBEsat (V) 102 (1) 0.8 10 (2) (3) 1 0.4 10−1 (1) (2) (3) 0 10−1 1 102 10 10−2 10−1 103 104 IC (mA) 1 10 102 103 104 IC (mA) IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. Fig.11 Equivalent on-resistance as a function of collector current; typical values. 001aaa733 10 (4) (3) (2) IC (A) 8 VBEon (V) (5) (6) 0.8 (7) 6 001aab321 1.2 (1) (8) (9) 4 (10) 0.4 2 0 0 0.4 0.8 1.2 1.6 0 10−1 2 VCE (V) (1) IB = 190 mA. (2) IB = 171 mA. (3) IB = 152 mA. (4) IB = 133 mA. (5) IB = 114 mA. (6) IB = 95 mA. (7) IB = 76 mA. (8) IB = 57 mA. 10 102 103 104 IC (mA) (9) IB = 38 mA. (10) IB = 19 mA. Tamb = 25 °C. Fig.12 Collector current as a function of collector-emitter voltage; typical values. 2004 Oct 25 1 Fig.13 Base-emitter turn-on voltage as a function of collector current; typical values. 9 NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X Reference mounting conditions 32 mm 32 mm handbook, halfpage 10 mm 40 mm 2.5 mm 1 mm 40 mm 10 mm 3 mm 2.5 mm 2.5 mm 1 mm 1 mm 0.5 mm 0.5 mm 5 mm 5 mm 3.96 mm 3.96 mm 1.6 mm 1.6 mm 001aaa234 MLE322 Fig.15 FR4, mounting pad for collector 1 cm2. Fig.14 FR4, standard footprint. 32 mm 30 mm 20 mm 40 mm 2.5 mm 1 mm 0.5 mm 5 mm 3.96 mm 1.6 mm 001aaa235 Fig.16 FR4, mounting pad for collector 6 cm2. 2004 Oct 25 10 NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2004 Oct 25 REFERENCES IEC JEDEC JEITA TO-243 SC-62 11 EUROPEAN PROJECTION ISSUE DATE 04-08-03 06-03-16 NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Oct 25 12 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp13 Date of release: 2004 Oct 25 Document order number: 9397 750 13924