BUZ21L

BUZ 21 L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 21 L Pin 2 D Pin 3 S VDS 100 V ID 21 A RDS(on) 0.085 Ω Package TO-220 AB Ordering Code C67078-S1338-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 21 Unit A ID IDpuls 84 TC = 25 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 21 11.5 mJ ID = 21 A, VDD = 25 V, RGS = 25 Ω L = 340 µH, Tj = 25 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 100 VGS Vgs Ptot ± 14 ± 20 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 75 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤ 1.67 75 E 55 / 150 / 56 °C K/W Semiconductor Group 1 01/97 BUZ 21 L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 100 1.6 0.1 10 10 0.075 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.085 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 5 V, ID = 10.5 A Semiconductor Group 2 01/97 BUZ 21 L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 8 14 1200 320 160 - S pF 1500 580 260 ns 25 40 VDS≥ 2 * ID * RDS(on)max, ID = 10.5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Rise time tr 110 170 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) 210 270 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Fall time tf 100 130 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 01/97 BUZ 21 L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed A 1.35 150 0.58 21 84 V 1.7 ns µC Values typ. max. Unit ISM VSD trr Qrr TC = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 42 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 4 01/97 BUZ 21 L Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 5 V 22 A 80 W Ptot 60 ID 18 16 14 12 50 40 10 30 8 6 4 10 2 0 0 20 40 60 80 100 120 °C 160 0 0 20 40 60 80 100 120 °C 160 20 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C 10 3 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 A K/W ID 10 2 /I D = tp = 22.0µs S ZthJC 10 0 VD 100 µs RD 10 1 o S( n) 1 ms 10 - 1 D = 0.50 10 ms 0.20 0.10 10 0 DC 10 - 2 0.05 0.02 0.01 single pulse 10 -1 10 0 10 1 V 10 2 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 01/97 BUZ 21 L Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 50 A Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.26 a b c d Ptot = 75W lk j i gh f VGS [V] a 3.0 b 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 9.0 10.0 Ω 0.22 ID 40 35 30 25 20 c e RDS (on) 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 i k e g f h j c d e f dg h i j k l 15 10 b 0.04 0.02 V 7.0 0.00 0 5 a VGS [V] = a 3.0 3.5 b 4.0 c 4.5 d 5.0 e f 5.5 6.0 g 6.5 h i 7.0 8.0 j 9.0 k 10.0 0 0.0 1.0 2.0 3.0 4.0 5.0 4 8 12 16 20 24 28 32 A 40 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 60 A 50 parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 20 S ID 45 40 35 30 25 20 gfs 16 14 12 10 8 6 15 4 10 5 0 0 1 2 3 4 5 6 7 8 V 10 2 0 0 10 20 30 40 A 60 VGS ID Semiconductor Group 6 01/97 BUZ 21 L Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 10.5 A, VGS = 5 V 0.28 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 0.24 RDS (on)0.22 0.20 0.18 VGS(th) 3.6 3.2 2.8 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 -60 0.8 0.4 -20 20 60 100 °C 160 0.0 -60 -20 20 60 100 °C 160 2.4 98% 98% typ 2.0 typ 1.6 2% 1.2 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 2 nF C 10 0 A IF Ciss 10 1 Coss Crss 10 - 1 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 10 -1 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 01/97 BUZ 21 L Avalanche energy EAS = ƒ(Tj) parameter: ID = 21 A, VDD = 25 V RGS = 25 Ω, L = 340 µH 110 mJ Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 32 A 16 V EAS 90 80 70 60 VGS 12 10 0,2 VDS max 0,8 VDS max 8 50 40 30 20 2 10 0 20 40 60 80 100 120 °C 160 0 0 10 20 6 4 30 40 50 60 70 80 nC 100 Tj QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 120 V 116 V(BR)DSS 14 1 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 01/97