SIPMOS® Power Transistor
q N channel q Enhancement mode q FREDFET
BUZ 205
Type BUZ 205
VDS
400 V
ID
6.0 A
RDS (on)
1.0 Ω
Package 1) TO-220 AB
Ordering Code C67078-A1401-A2
Maximum Ratings Parameter Continuous drain current, TC = 35 ˚C Pulsed drain current, TC = 25 ˚C Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Power dissipation, TC = 25 ˚C Operating and storage temperature range Thermal resistance, chip-case DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values 6.0 24 400 400 ± 20 75 – 55 ... + 150 ≤ 1.67 E 55/150/56 W ˚C K/W – V Unit A
ID ID puls VDS VDGR VGS Ptot Tj , Tstg Rth JC
1) See chapter Package Outlines.
Semiconductor Group
508
BUZ 205
Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static characteristics Drain-source breakdown voltage VGS = 0 V, ID = 0.25 mA Gate threshold voltage VGS = VDS , ID = 1 mA Zero gate voltage drain current Values typ. max. Unit
V(BR) DSS VGS (th) IDSS
400 2.1
– 4.0
– 4.0
V
µA – – 20 100 10 0.9 250 1000 100 1.0 nA Ω
VDS = 400 V, VGS = 0 V Tj = 25 ˚C Tj = 125 ˚C
Gate-source leakage current
IGSS RDS (on)
– –
VGS = 20 V, VDS = 0 V
Drain-source on-resistance VGS = 10 V, ID = 4.0 A Dynamic characteristics Forward transconductance
VDS ≥ 2 x ID x RDS(on)max , ID = 4.0 A
Input capacitance
gfs Ciss Coss Crss
1.7 – – – – – – –
2.9 1500 120 35 30 40 110 50
– 2000 180 60 45 60 140 65
S pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz
td (on) Turn-on time ton , (ton = td (on) + tr) VDD = – 30 V, VGS = 10 V, ID = 2.7 A, RGS = 50 Ω t
r
ns
Turn-off time toff , (toff = td (off) + tf) td (off) VDD = – 30 V, VGS = 10 V, ID = 2.7 A, RGS = 50 Ω t f
Semiconductor Group
509
BUZ 205
Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Reverse diode Continuous reverse drain current TC = 25 ˚C Pulsed reverse drain current TC = 25 ˚C Diode forward on-voltage Values typ. max. Unit
IS ISM VSD trr Qrr
– – – – –
– – 1.3 180 0.65
6.0 24 1.6 250 1.2
A
V ns µC
IS = 12 A, VGS = 0 V
Reverse recovery time
VR = 100 V, IF = IDR , diF / dt = 100 A/µs
Reverse recovery charge VR = 100 V, IF = IDR , diF / dt = 100 A/µs
Semiconductor Group
510
BUZ 205
Characteristics at Tj = 25 ˚C, unless otherwise specified. Total power dissipation Typ. output characteristics Ptot = f (TC) ID = f (VDS) parameter: tp = 80 µs
Safe operating area ID = f (VDS) parameter: D = 0.01, TC = 25 ˚C
Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs, VDS = 25 V
Semiconductor Group
511
BUZ 205
Typ. drain-source on-resistance RDS (on) = f (ID) parameter: VGS
Drain-source on-resistance RDS (on) = f (Tj) parameter: ID = 4.0 A, VGS = 10 V, (spread)
Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs
Gate threshold voltage VGS (th) = f (Tj) parameter: VGS = VDS , ID = 1 mA, (spread)
Semiconductor Group
512
BUZ 205
Typ. capacitances C = f (VDS) parameter: VGS = 0 V, f = 1 MHz
Drain current ID = f (TC) parameter: VGS ≥ 10 V
Forward characteristics of reverse diode IF = f (VSD) parameter: tp = 80 µs, Tj
Transient thermal impedance Z th JC = f (tp) parameter: D = tp / T
Semiconductor Group
513
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