C67078-S1330-A3

BUZ 11 AL Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 11 AL Pin 2 D Pin 3 S VDS 50 V ID 26 A RDS(on) 0.055 Ω Package TO-220 AB Ordering Code C67078-S1330-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 26 Unit A ID IDpuls 104 TC = 25 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 30 1.9 mJ ID = 30 A, VDD = 25 V, RGS = 25 Ω L = 15.6 µH, Tj = 25 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 14 VGS Vgs Ptot ± 14 ± 20 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 75 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤ 1.67 ≤ 75 E 55 / 150 / 56 °C K/W Semiconductor Group 1 07/96 BUZ 11 AL Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 1.6 0.1 10 10 0.04 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.055 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 5 V, ID = 13 A Semiconductor Group 2 07/96 BUZ 11 AL Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 10 22 1500 580 190 - S pF 2000 840 300 ns 25 40 VDS≥ 2 * ID * RDS(on)max, ID = 13 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Rise time tr 80 120 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) 110 160 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Fall time tf 80 110 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 11 AL Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 1.6 100 0.2 26 104 V 1.8 ns µC Values typ. max. Unit TC = 25 °C Inverse diode direct current,pulsed ISM - TC = 25 °C Inverse diode forward voltage VSD trr Qrr VGS = 0 V, IF = 60 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 4 07/96 BUZ 11 AL Not for new design Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 5 V 28 A 80 W 24 Ptot 60 ID 22 20 50 18 16 40 14 12 30 10 8 20 6 10 0 0 20 40 60 80 100 120 °C 160 4 2 0 0 20 40 60 80 100 120 °C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0, TC = 25°C 10 3 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A ID 10 2 t = 48.0µs p 100 µs ZthJC 10 0 /ID = ) on S( D R VD S 1 ms 10 -1 D = 0.50 0.20 0.10 10 1 10 ms 10 -2 0.05 0.02 0.01 single pulse 10 0 DC 0 10 10 1 V 10 2 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 11 AL Not for new design Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs l Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.17 60 A 50 Ptot = 75W k ji h g f VGS [V] a 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 b Ω 0.14 RDS (on) 0.12 0.10 a b c ID 45 e c d e f 40 35 30 25 20 15 10 5 0 0.0 1.0 2.0 3.0 4.0 a b c d g h i j k l 0.08 0.06 d 0.04 h e f g i 0.02 0.00 V 5.5 0 VGS [V] = a 3.0 2.5 3.5 b 4.0 c 4.5 d 5.0 e f 5.5 6.0 g 6.5 h i j j 7.0 8.0 10.0 5 10 15 20 25 30 35 40 A 50 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 65 A 55 parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 32 S ID 50 45 40 35 gfs 24 20 16 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 V 10 0 0 10 20 30 40 A ID 60 8 12 4 VGS Semiconductor Group 6 07/96 BUZ 11 AL Not for new design Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 13 A, VGS = 5 V 0.26 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 0.22 RDS (on) 0.20 0.18 0.16 0.14 0.12 VGS(th) 3.6 3.2 2.8 2.4 98% 2.0 0.10 0.08 typ 98% typ 1.6 2% 1.2 0.8 0.4 0.0 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160 0.06 0.04 0.02 0.00 -60 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 3 nF C A IF Ciss 10 0 10 2 Coss Crss 10 -1 10 1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 10 0 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 11 AL Not for new design Avalanche energy EAS = ƒ(Tj ) parameter: ID = 30 A, VDD = 25 V RGS = 25 Ω, L = 15.6 µH 15 mJ V Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 39 A 16 EAS 12 11 10 9 8 7 6 5 4 3 2 1 0 20 40 60 80 100 120 °C 160 VGS 12 10 8 0,2 VDS max 0,8 VDS max 6 4 2 0 0 10 20 30 40 50 60 70 nC 90 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 60 V V(BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 BUZ 11 AL Not for new design Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96