2N5886

2N5884 2N5886 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS s s s SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 1 2 TO-3 DESCRIPTION The 2N5884 and 2N5886 are complementary silicon power transistor in Jedec TO-3 metal case inteded for use in power linear amplifiers and switching applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter PNP NPN V CBO V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 2N5884 2N5886 80 80 5 25 50 7.5 200 -65 to 200 200 V V V A A A W o o Unit C C For PNP types voltage and current values are negative. June 1997 1/4 2N5884 / 2N5886 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.875 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I CBO I CEO I EBO Parameter Collector Cut-off Current (V BE = - 1.5V) Collector Cut-off Current (I E = 0 ) Collector Cut-off Current (I B = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = r ated V CEO V CE = r ated V CEO V CE = r ated V CBO V CE = 4 0 V V EB = 5 V I C = 2 00 mA IC = 15 A IC = 25 A IC = 25 A IC = 10 A IC = 3 A IC = 10 A IC = 25 A IC = 3 A IC = 1 A I B = 1 .5 A I B = 6 .25 A I B = 6 .25 A V CE = 4 V V CE = 4 V V CE = 4 V V CE = 4 V V CE = 4 V V CE = 1 0 V f = 1 KHz f =1 MHz f = 1MHz 500 1000 0.7 1 0.8 pF pF µs µs µs 35 20 4 20 4 MHz 80 1 4 2.5 1.5 100 T c = 1 50 C o Min. Typ. Max. 1 10 1 2 1 Unit mA mA mA mA mA V V V V V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V CE(sat) ∗ V BE(sat) ∗ V BE ∗ h FE ∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain hfe fT C CBO Small Signal Current Gain Transition frequency Collector Base Capacitance Rise Time Storage Time Fall Time IE = 0 V CB = 1 0 V for N PN type for P NP type IC = 10 A VCC = 3 0 V I B1 = - IB2 = 1 A tr ts tf ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 2N5884 / 2N5886 TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F 3/4 E 2N5884 / 2N5886 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4