74H1G66

74H1G66 SINGLE BILATERAL SWITCH s s s s s s HIGH SPEED: tPD = 4ns (TYP.) at VCC = 4.5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = V NIL = 28% VCC (MIN.) LOW "ON" RESISTANCE: RON = 50Ω (TYP.) AT VCC = 9V II/O = 100µA SINE WAVE DISTORTION: 0.042% AT VCC = 4V f = 1KHz WIDE OPERATING RANGE: VCC (OPR) = 2V TO 12V SOT23-5L ORDER CODES PACKAGE SOT23-5L T&R 74H1G66STR DESCRIPTION The 74H1G66 is a CMOS SINGLE BILATERAL SWITCH fabricated in silicon gate C2MOS technology. It achieves high speed performance combined with true CMOS low power consumption. The C input is provided to control the switch and it’s compatible with standard CMOS output; the switch is ON (port I/O is connected to Port O/I) when the C input is held high and OFF (high impedance state exists between the two ports) when C is held low. All inputs and output are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS July 2001 1/10 74H1G66 INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1 2 3 4 5 SYMBOL I/O O/I GND C VCC NAME AND FUNCTION Independent Input/Output Independent Output/Input Ground (0V) Enable Input (Active HIGH) Positive Supply Voltage TRUTH TABLE C H L * High Impedance State SWITCH FUNCTION ON OFF * ABSOLUTE MAXIMUM RATINGS Symbol VCC VI/O VIC IIOK IIK IO PD Tstg TL Supply Voltage DC Input/Output Voltage DC Control Input Voltage DC Input/Output Diode Current DC Control Input Diode Current DC Output Source Sink Current per Output Pin Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +13.0 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 25 ± 50 500 (*) -65 to +150 300 Unit V V V mA mA mA mA mW °C °C ICC or IGND DC VCC or Ground Current Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VI/O Top Supply Voltage Control Input Voltage Input/Output Voltage Operating Temperature Input Rise and Fall Time on control pin tr, tf VCC = 2.0V VCC = 4.5V VCC = 6.0V VCC = 10.0V Parameter Value 2 to 12 0 to VCC 0 to VCC -55 to 125 0 to 1000 0 to 500 0 to 400 0 to 250 Unit V V V °C ns ns ns ns 2/10 74H1G66 DC SPECIFICATIONS Test Condition Symbol Parameter VCC (V) 2.0 4.5 9.0 12.0 2.0 4.5 9.0 12.0 4.5 9.0 12.0 4.5 9.0 12.0 12.0 TA = 25°C Min. 1.5 3.15 6.3 8.4 0.5 1.35 2.7 3.6 170 85 80 100 75 70 ±0.1 Typ. Max. Value -40 to 85°C Min. 1.5 3.15 6.3 8.4 0.5 1.35 2.7 3.6 200 100 90 130 95 90 ±1 Max. -55 to 125°C Min. 1.5 3.15 6.3 8.4 0.5 1.35 2.7 3.6 250 150 120 160 115 110 ±2 Max. Unit VIH High Level Input Voltage V VIL Low Level Input Voltage V RON ON Resistance VIC = VIH VI/O = VCC to GND II/O ≤ 1mA VIC = VIH VI/O = VCC or GND II/O ≤ 1mA VOS = VCC to GND VIS = VCC to GND VIC = VIL VOS = VCC to GND VIC = VIH VIC = 5.5V or GND RON ON Resistance 96 55 45 70 50 45 Ω Ω µA IOFF Input/Output Leakage Current (SWITCH OFF) Switch Input Leakage Current (SWITCH ON, OUTPUT OPEN) Control Input Leakage Current Quiescent Supply Current IIZ 12.0 ±0.1 ±1 ±2 µA IIN ICC 6.0 6.0 9.0 12.0 ± 0.1 1 4 8 ± 1.0 10 40 80 ± 1.0 20 80 160 µA VI = VCC or GND µA 3/10 74H1G66 AC ELECTRICAL CHARACTERISTICS (CL = 50pF, Input tr = tf = 6ns) Test Condition Symbol Parameter VCC (V) 2.0 4.5 9.0 12.0 2.0 4.5 9.0 12.0 2.0 4.5 9.0 12.0 2.0 4.5 9.0 12.0 TA = 25°C Min. Typ. 10 4 3 3 18 8 6 6 20 10 8 8 30 30 30 30 Max. 50 10 8 7 100 20 12 12 115 23 20 18 Value -40 to 85°C Min. Max. 65 15 13 10 125 25 22 18 145 29 25 22 -55 to 125°C Min. Max. 75 18 16 12 150 30 27 25 175 35 30 27 Unit ΦI/O Phase Difference Between Input and Output ns tPLZ tPHZ Output Disable Time RL = 500 Ω ns tPZL tPZH Output Enable Time RL = 1 KΩ ns Maximum Control Input Frequency RL = 1 KΩ CL = 15pF VO = 1/2VCC MHz CAPACITIVE CHARACTERISTICS Test Condition Symbol Parameter Min. CIN CI/O CIOS CPD Input Capacitance Switch Terminal Capacitance Feed through Capacitance Power Dissipation Capacitance (note 1) TA = 25°C Typ. 5 10 0.5 15 Max. 10 Value -40 to 85°C Min. Max. 10 -55 to 125°C Min. Max. 10 pF pF pF pF Unit 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC 4/10 74H1G66 ANALOG SWITCH CHARACTERISTICS (GND = 0V; TA = 25°C) Test Condition Symbol Parameter Sine Wave Distortion (THD) fMAX Frequency Response (Switch ON) Feed through Attenuation (Switch OFF) Crosstalk (Control Input to Signal Output) VCC (V) 4.5 9.0 4.5 9.0 4.5 9.0 4.5 9.0 VIN (Vp-p) 4 8 fIN = 1 KHz RL = 10 KΩ, CL = 50 pF Adjust fIN voltage to obtain 0 dBm at VOS. Increase fIN Frequency until dB meter reads -3dB RL = 50Ω, CL = 10 pF VIN is centered at VCC/2 Adjust fIN Voltage to obtained 0dBm at VIS RL = 600Ω, CL = 50 pF, fIN = 1KHz sine wave RL = 600Ω, CL = 50 pF, fIN = 1KHz square wave tr = tf = 6ns Value Unit Typ. 0.04 0.04 150 180 -60 -60 60 60 % MHz dB mV 5/10 74H1G66 SWITCHING CARACTERISTICS TEST CIRCUIT CROSSTALK (control to output BANDWIDTH AND FEEDTHROUGH ATTENUATION MAXIMUM CONTROL FREQUENCY 6/10 74H1G66 CHANNEL RESISTANCE (RON) ICC (Opr.) 7/10 74H1G66 SOT23-5L MECHANICAL DATA mm. DIM. MIN. A A1 A2 b C D E E1 e e1 L 0.35 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.95 1.9 0.55 13.7 TYP MAX. 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 MIN. 35.4 0.0 35.4 13.7 3.5 110.2 102.3 59.0 37.4 74.8 21.6 TYP. MAX. 57.1 5.9 51.2 19.7 7.8 118.1 118.1 68.8 mils 8/10 74H1G66 Tape & Reel SOT23-xL MECHANICAL DATA mm. DIM. MIN. A C D N T Ao Bo Ko Po P 3.13 3.07 1.27 3.9 3.9 3.23 3.17 1.37 4.0 4.0 12.8 20.2 60 14.4 3.33 3.27 1.47 4.1 4.1 0.123 0.120 0.050 0.153 0.153 0.127 0.124 0.054 0.157 0.157 13.0 TYP MAX. 180 13.2 0.504 0.795 2.362 0.567 0.131 0.128 0.0.58 0.161 0.161 0.512 MIN. TYP. MAX. 7.086 0.519 inch 9/10 74H1G66 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom © http://www.st.com 10/10