GW30NC120HD

STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH™ IGBT General features Type VCES VCE(sat) @25°C < 2.75V IC @100°C 30A STGW30NC120HD 1200V ■ ■ ■ ■ ■ ■ Low on-losses Low on-voltage drop (Vcesat) High current capability High input impedance (voltage driven) Low gate charge Ideal for soft switching application TO-247 Description Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop. Internal schematic diagram Applications ■ Induction heating Order codes Part number STGW30NC120HD Marking GW30NC120HD Package TO-247 Packaging Tube January 2007 Rev 8 1/13 www.st.com 13 Contents STGW30NC120HD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STGW30NC120HD Electrical ratings 1 Electrical ratings Table 1. Symbol VCES IC (1) IC (1) ICL (2) VGE PTOT If Tj Tstg 1. Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at 25°C Collector current (continuous) at 100°C Collector current (pulsed) Gate-emitter voltage Total dissipation at TC = 25°C Diode RMS forward current at TC = 25°C Operating junction temperature –55 to 150 Storage temperature °C Value 1200 60 30 135 ±25 220 30 Unit V A A A V W A Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R ×V (T , I ) THJ – C CESAT ( MAX ) C C 2. Vclamp=960V, Tj=125°C, RG=10Ω, VGE=15V Table 2. Symbol Rthj-case Rthj-amb Rthj-amb Thermal resistance Parameter Thermal resistance junction-case Thermal resistance junction-ambient (diode) Thermal resistance junction-ambient (IGBT) Value 0.57 1.6 50 Unit °C/W °C/W °C/W 3/13 Electrical characteristics STGW30NC120HD 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol VBR(CES) VCE(SAT) VGE(th) ICES IGES gfs Static Parameter Collector-emitter breakdown voltage Test conditions IC = 1mA, VGE = 0 Min. 1200 2.2 2.0 3.75 2.75 Typ. Max. Unit V V V V µA mA nA S Collector-emitter saturation VGE= 15V, IC= 20A, Tj= 25°C voltage VGE= 15V, IC= 20A, Tj=125°C Gate threshold voltage Collector-emitter leakage current (VCE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC= 250µA VGE =Max rating,Tc=25°C VGE =Max rating, Tc=125°C VGE =± 20V , VCE = 0 VCE = 25V, IC= 20A 5.75 500 10 ± 100 14 Table 4. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. 2510 175 30 110 16 49 120 Max. Unit pF pF pF nC nC nC VCE = 25V, f = 1 MHz, VGE=0 VCE = 960V, IC= 20A,VGE=15V 4/13 STGW30NC120HD Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 960V, IC = 20A RG= 10Ω VGE= 15V, , Tj=25°C (see Figure 16) VCC = 960V, IC = 20A , RG= 10Ω VGE= 15V, Tj= 125°C (see Figure 16) VCC = 960V, IC = 20A , RG= 10Ω VGE= 15V, Tj= 25°C (see Figure 16) VCC = 960V, IC = 20A RG= 10Ω VGE= 15V, , Tj= 125°C (see Figure 16) Min. Typ. 29 11 1820 27 14 1580 90 275 312 150 336 592 Max. Unit ns ns A/µs ns ns A/µs ns ns ns ns ns ns Table 6. Symbol Eon (1) Eoff (2) Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 960V, IC = 20A , RG= 10Ω VGE= 15V, Tj= 25°C (see Figure 16) VCC = 960V, IC = 20A , RG= 10Ω VGE= 15V, Tj= 125°C (see Figure 16) Min. Typ. 1660 4438 6098 3015 6900 9915 Max. Unit µJ µJ µJ µJ µJ µJ Ets Eon (1) Eoff (2) Ets 1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current Table 7. Symbol Vf trr Qrr Irrm Collector-emitter diode Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions If = 20A, Tj = 25°C If = 20A, Tj = 125°C If = 20A, VR = 27V, Tj = 125°C, di/dt = 100A/µs (see Figure 19) Min. Typ. 1.9 1.7 152 722 9 Max. 2.5 Unit V V ns nC A 5/13 Electrical characteristics STGW30NC120HD 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs. temperature Figure 5. Gate charge vs. gate-source voltage Figure 6. Capacitance variations 6/13 STGW30NC120HD Figure 7. Normalized gate threshold voltage vs. temperature Figure 8. Electrical characteristics Collector-emitter on voltage vs. collector current Figure 9. Normalized breakdown voltage vs. temperature Figure 10. Switching losses vs. temperature Figure 11. Switching losses vs. gate resistance Figure 12. Switching losses vs. collector current 7/13 Electrical characteristics Figure 13. Thermal Impedance STGW30NC120HD Figure 14. Turn-off SOA Figure 15. Emitter-collector diode characteristics 8/13 STGW30NC120HD Test circuit 3 Test circuit Figure 17. Gate charge test circuit Figure 16. Test circuit for inductive load switching Figure 18. Switching waveform Figure 19. Diode recovery time waveform 9/13 Package mechanical data STGW30NC120HD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STGW30NC120HD Package mechanical data TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S 11/13 Revision history STGW30NC120HD 5 Revision history Table 8. Date 23-Nov-2005 17-Mar-2006 05-May-2006 30-May-2006 23-Jun-2006 07-Sep-2006 14-Nov-2006 26-Jan-2007 Revision history Revision 1 2 3 4 5 6 7 8 First issue. Complete version Modified value on Table 1.: Absolute maximum ratings New values onTable 2: Thermal resistance Modified value on Table 3.: Static Modified TJ temperature range to 150°C in Table 1.: Absolute maximum ratings Modified Figure 4. and Figure 8. Typing error on first page. 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