STB10N95K5

STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 N-channel 950 V, 0.65 Ω typ., 8 A Zener-protected SuperMESH™ 5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet - production data Features TAB Order codes 3 1 2 D PAK 3 VDS RDS(on) max ID PTOT STB10N95K5 130 W 2 1 STF10N95K5 TO-220FP 950 V 0.8 Ω 30 W 8A STP10N95K5 TAB 130 W STW10N95K5 • Worldwide best FOM (figure of merit) 3 1 2 2 3 1 • 100% avalanche tested TO-247 TO-220 • Ultra low gate charge • Zener-protected Figure 1. Internal schematic diagram '7$% Applications • Switching applications Description * 6 AM01476v1 These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. Table 1. Device summary Order codes Marking Package Packaging D2PAK Tape and reel STB10N95K5 STF10N95K5 TO-220FP 10N95K5 STP10N95K5 TO-220 STW10N95K5 TO-247 January 2014 This is information on a product in full production. DocID024850 Rev 3 Tube 1/22 www.st.com Contents STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/22 .............................................. 9 DocID024850 Rev 3 STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220FP VGS ID ID Gate- source voltage D2PAK, TO-220, TO-247 ±30 Drain current (continuous) at TC = 25 °C IDM (2) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C V (1) 8 A (1) 5 A 8 Drain current (continuous) at TC = 100 °C Unit 5 32 A 30 130 W IAR Max current during repetitive or single pulse avalanche 2.5 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V) 122 mJ dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns dv/dt(4) MOSFET dv/dt ruggedness 50 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C) Tj Tstg Operating junction temperature Storage temperature 2500 V - 55 to 150 °C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 8 A, di/dt ≤ 100 A/μs, VDS(peak) ≤ V(BR)DSS. 4. VSD ≤ 760 V Table 3. Thermal data Value Symbol Parameter TO-220FP Rthj-case Thermal resistance junction-case max 4.2 Rthj-amb Thermal resistance junction-amb max 62.5 Rthj-pcb(1) Thermal resistance junction-pcb max 1. D2PAK TO-220, TO-247 0.96 °C/W 62.5 30 Unit °C/W °C/W When mounted on 1 inch² FR-4, 2 Oz copper board DocID024850 Rev 3 3/22 22 Electrical characteristics 2 STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS IDSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Typ. VGS = ± 20 V; VDS=0 VGS(th) Gate threshold voltage VDS = VGS, ID = 100 μA RDS(on) Static drain-source onresistance VGS = 10 V, ID = 4 A Max. Unit 950 V Zero gate voltage, VGS = 0 VDS = 950 V drain current VDS = 950 V, TC=125 °C Gate-body leakage current IGSS Min. 1 μA 50 μA ±10 μA 4 5 V 0.65 0.8 Ω Min. Typ. Max. Unit - 630 - pF - 50 - pF 3 Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 0.6 - pF Co(tr)(1) Equivalent capacitance time related - 77 - pF Co(er)(2) Equivalent capacitance energy related - 28 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 6.5 - Ω Qg Total gate charge - 22 - nC Qgs Gate-source charge - 5 - nC Qgd Gate-drain charge VDD = 760 V, ID = 8 A VGS =10 V (see Figure 20) - 15 - nC VDS =100 V, f=1 MHz, VGS=0 VGS = 0, VDS = 0 to 760 V 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/22 DocID024850 Rev 3 STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Electrical characteristics Table 6. Switching times Symbol td(on) tr Parameter Test conditions tf Typ. Max Unit - 22 - ns - 14 - ns - 51 - ns - 15 - ns Min. Typ. Max Unit Turn-on delay time VDD = 475 V, ID = 4 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) Rise time td(off) Min. Turn-off-delay time Fall time Table 7. Source drain diode Symbol Parameter Test conditions A ISD ISDM (1) VSD (2) Source-drain current - 8 Source-drain current (pulsed) - 32 A 1.5 V Forward on voltage ISD = 8 A, VGS = 0 - trr Reverse recovery time - 404 ns Qrr Reverse recovery charge - 5.2 μC IRRM Reverse recovery current ISD = 8 A, di/dt = 100 A/μs VDD= 60 V (see Figure 21) - 25.5 A - 596 ns - 6.9 μC - 23 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 8 A, di/dt = 100 A/μs VDD= 60 V TJ = 150 °C (see Figure 21) 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0 Min Typ. Max. Unit 30 - - V The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. DocID024850 Rev 3 5/22 22 Electrical characteristics 2.1 STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Electrical characteristics (curves) Figure 2. Safe operating area for D2PAK and TO-220 Figure 3. Thermal impedance for D2PAK and TO-220 AM16133v1 ID (A) on ) 10µs 100µs 1ms D S( O Li per m at ite io d ni by n m this ax a R rea is 10 1 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 10 1 100 VDS(V) Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP AM16134v1 ID (A) on ) 10µs D S( O Li per m at ite io d ni by n m this ax a R rea is 10 1 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 10 1 100 VDS(V) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 AM16135v1 ID (A) on ) 10µs D S( O Li per m at ite io d ni by n m this ax a R rea is 10 1 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 6/22 1 10 100 VDS(V) DocID024850 Rev 3 STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Figure 8. Output characteristics Figure 9. Transfer characteristics AM16136v1 ID (A) VGS=10, 11V 16 Electrical characteristics 9V AM16137v1 ID (A) VDS=20V 16 12 12 8V 8 8 4 4 7V 6V 0 0 8 4 12 16 Figure 10. Gate charge vs gate-source voltage AM16138v1 VGS (V) VDD=760V ID=8A VDS 10 0 5 VDS(V) VDS (V) 6 7 8 9 10 VGS(V) Figure 11. Static drain-source on-resistance AM16139v1 RDS(on) (Ω) VGS=10V 1.6 600 8 1.2 400 6 0.8 4 200 2 0 0 5 15 10 20 0 0 Qg(nC) Figure 12. Capacitance variations 2 3 4 5 6 7 ID(A) Figure 13. Output capacitance stored energy AM16140v1 C (pF) 0.4 AM16141v1 Eoss (µJ) 10 1000 Ciss 8 100 Coss 6 10 Crss 1 2 0.1 0.1 4 1 10 100 VDS(V) DocID024850 Rev 3 0 0 200 400 600 800 VDS(V) 7/22 22 Electrical characteristics STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Figure 14. Normalized gate threshold voltage vs temperature AM16142v1 VGS(th) (norm) Figure 15. Normalized on-resistance vs temperature AM16143v1 RDS(on) (norm) ID=100µA 1.2 ID=4A VGS=10V 2.5 1 2 0.8 1.5 0.6 1 0.4 0.5 0.2 0 -100 -50 0 50 100 150 0 -100 TJ(°C) Figure 16. Normalized VDS vs temperature -50 0 50 100 150 Figure 17. Source-drain diode forward characteristics AM16145v1 VDS TJ(°C) AM16144v1 VSD(V) (norm) TJ=-50°C ID=1mA 1.1 0.9 TJ=25°C 1.05 0.8 1 0.7 TJ=150°C 0.95 0.6 0.9 0.85 -100 0.5 -50 0 50 100 150 TJ(°C) Figure 18. Maximum avalanche energy vs starting TJ AM16146v1 EAS (mJ) 120 ID=2.5 A VDD=50 V 100 80 60 40 20 0 0 8/22 25 50 75 100 125 TJ(°C) DocID024850 Rev 3 2 3 4 5 6 7 ISD(A) STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 21. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 22. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID024850 Rev 3 10% AM01473v1 9/22 22 Package mechanical data 4 STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/22 DocID024850 Rev 3 STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Package mechanical data Figure 25. D²PAK (TO-263) drawing 0079457_T Table 9. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 DocID024850 Rev 3 11/22 22 Package mechanical data STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Table 9. D²PAK (TO-263) mechanical data (continued) mm Dim. Min. Typ. Max. J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° 8° Figure 26. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 a. All dimension are in millimeters 12/22 DocID024850 Rev 3 Footprint STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Package mechanical data Figure 27. TO-220FP drawing 7012510_Rev_K_B DocID024850 Rev 3 13/22 22 Package mechanical data STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Table 10. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 14/22 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID024850 Rev 3 STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Package mechanical data Figure 28. TO-220 type A drawing BW\SH$B5HYB7 DocID024850 Rev 3 15/22 22 Package mechanical data STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 16/22 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID024850 Rev 3 STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Package mechanical data Figure 29. TO-247 drawing 0075325_G Table 12. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 DocID024850 Rev 3 17/22 22 Package mechanical data STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Table 12. TO-247 mechanical data (continued) mm. Dim. Min. Typ. Max. e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18/22 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID024850 Rev 3 5.70 STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 5 Packaging mechanical data Packaging mechanical data Figure 30. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DocID024850 Rev 3 19/22 22 Packaging mechanical data STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Figure 31. Reel T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 20/22 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID024850 Rev 3 Min. Max. 330 13.2 26.4 30.4 STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 6 Revision history Revision history Table 14. Document revision history Date Revision Changes 24-Jun-2013 1 First release. 07-Oct-2013 2 – – – – – – – 29-Jan-2014 3 – Datasheet status promoted from preliminary data to production data – Minor text changes Added: D2PAK package Modified: note 4 in Table 2 Added: Thermal resistance junction-pcb max parameter Modified: typical values in Table 5, 6 and 7 Added: Section 2.1: Electrical characteristics (curves) Updated: Section 4: Package mechanical data Minor text changes DocID024850 Rev 3 21/22 22 STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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