STBR3012W

STBR3012 Datasheet High voltage rectifier for bridge applications Features A1 K K • • • • Ultra low conduction losses Ultra-low reverse losses High junction temperature capability (+175 °C) D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating) • ECOPACK®2 compliant (DO-247) A A A K DO-247 NC D²PAK HV Applications • • SMPS Bridge Description The high quality design of this diode has produced a device with consistently reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability like automotive applications. Thanks to its ultra-low conduction losses, the STBR3012 is especially suitable for use as input bridge diode in battery chargers. Product status link STBR3012 Product summary Symbol Value IF(AV) 30 A VRRM 1200 V Tj +175 °C VF (typ.) 0.95 V DS11909 - Rev 2 - November 2018 For further information contact your local STMicroelectronics sales office. www.st.com STBR3012 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRSM Non-repetitive surge reverse voltage 1500 V VRRM Repetitive peak reverse voltage 1200 V IF(RMS) Forward rms current 45 A IF(AV) Average forward current TC = 155 °C, δ = 0.5 square wave 30 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 300 A Tstg Storage temperature range -65 to +175 °C +175 °C Tj Operating junction temperature Table 2. Thermal parameters Symbol Rth(j-c) Parameter Typ. value Unit 0.45 °C/W Junction to case For more information, please refer to the following application note: • AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 30 A Min. Typ. - Max. 2 - 10 100 - 1.05 1.3 - 0.95 1.2 Unit µA V 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.96 x IF(AV) + 0.008 x IF2(RMS) For more information, please refer to the following application notes related to the power losses: • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses in a power diode DS11909 - Rev 2 page 2/12 STBR3012 Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current Figure 2. Forward voltage drop versus forward current (typical values) P(W) 50 1,0E+03 δ = 0.5 40 IFM(A) δ= 1 1,0E+02 δ = 0.2 Tj = 150 °C δ = 0.1 30 1,0E+01 δ = 0.05 20 Tj = 25 °C 1,0E+00 T 1,0E-01 10 tp δ =tp/T IF(AV)(A) VFM(V) 0 0 5 10 15 20 25 30 35 Figure 3. Forward voltage drop versus forward current (maximum values) 1,0E+03 1,0E-02 0,0 1,0 1,5 2,0 Figure 4. Relative variation of thermal impedance junction to case versus pulse duration IFM(A) 1,0 0,9 1,0E+02 0,5 Zth(j-c) /Rth(j-c) Single pulse 0,8 Tj = 150 °C 0,7 Tj = 25 °C 1,0E+01 0,6 0,5 0,4 1,0E+00 0,3 0,2 1,0E-01 0,1 VFM(V) 0,0 1,E-03 1,0E-02 0,0 DS11909 - Rev 2 0,5 1,0 1,5 2,0 t P(s) 1,E-02 1,E-01 1,E+00 2,5 page 3/12 STBR3012 Characteristics (curves) Figure 5. Junction capacitance versus reverse voltage applied (typical values) 1000 Figure 6. Relative variation of non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) C(pF) IFSM(t p ) / IFSM(10ms) 4.0 F = 1 MHz Vosc = 30 mVRMS Tj = 25 °C 3.5 3.0 100 2.5 2.0 VR(V) 1.5 10 1 10 100 1000 10000 t p (ms) 1.0 0.1 Figure 7. Relative variation of non-repetitive peak surge forward current versus initial junction temperature (sinusoidal waveform) 1.2 1.0 10.0 Figure 8. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy printed board FR4, eCu = 35µm) (D²PAK HV) IFSM(T j) / IFSM(25°C) 80 Rth(j-a) (°C/W) 70 1.0 60 0.8 50 40 0.6 30 0.4 20 0.2 10 T j(°C) 0.0 25 DS11909 - Rev 2 50 75 100 125 150 175 SCu (cm²) 0 0 5 10 15 20 25 30 35 40 page 4/12 STBR3012 Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 DO-247 package information • • • • Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 N·m (DO-247) Maximum torque value: 1.0 N·m (DO-247) Figure 9. DO-247 package outline V Dia V A H 0.10 L5 L L2 L4 F2 L1 F3 L3 D V2 F G DS11909 - Rev 2 M E page 5/12 STBR3012 DO-247 package information Table 4. DO-247 package mechanical data Dimensions Ref. Millimeters Min. Max. Min. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F2 F3 2.00 typ. 2.00 G 0.078 typ. 2.40 0.078 10.90 typ. 0.094 0.429 typ. H 15.45 15.75 0.608 0.620 L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 L3 18.50 typ. 14.20 0.728 typ. 14.80 0.559 0.582 L4 34.60 typ. 1.362 typ. L5 5.50 typ. 0.216 typ. M 2.00 3.00 0.078 0.118 V 5° 5° V2 60° 60° Dia. DS11909 - Rev 2 Inches 3.55 3.65 0.139 0.143 page 6/12 STBR3012 D²PAK high voltage package information 2.2 D²PAK high voltage package information Figure 10. D²PAK high voltage package outline A H C L1 L R L4 R M L2 0.25 gauge plane F (x2) E e H1 L3 A1 V DS11909 - Rev 2 page 7/12 STBR3012 D²PAK high voltage package information Table 5. D²PAK high voltage package mechanical data Ref. Dimensions Min. Typ. Max. A 4.30 4.70 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 7.80 L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 M 2.6 2.9 R 0.20 0.60 V 0° 8° Figure 11. D²PAK High Voltage footprint in mm 10,58 7,46 15,95 5,10 3,40 1,20 5,08 DS11909 - Rev 2 page 8/12 STBR3012 D²PAK high voltage package information 2.2.1 Creepage distance between anode and cathode Table 6. Creepage distance between anode and cathode Symbol Note: Parameter CdA-K1 Minimum creepage distance between A and K1 (with top coating) CdA-K2 Minimum creepage distance between A and K2 (without top coating) Value D²PAK HV 5.38 3.48 Unit mm D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (refer to IEC 60664-1) Figure 12. Creepage with top coating Figure 13. Creepage without top coating DS11909 - Rev 2 page 9/12 STBR3012 Ordering information 3 Ordering information Table 7. Ordering information DS11909 - Rev 2 Order code Marking Package Weight Base qty. Delivery mode STBR3012W STBR3012W DO-247 4.4 g 30 Tube STBR3012G2-TR STBR3012G2 D²PAK HV 1.48 g 1000 Tape and reel page 10/12 STBR3012 Revision history Table 8. Document revision history DS11909 - Rev 2 Date Revision Changes 02-Nov-2016 1 First issue. 19-Nov-2018 2 Added D²PAK HV. page 11/12 STBR3012 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS11909 - Rev 2 page 12/12