STD11N60DM2

STD11N60DM2 Datasheet N-channel 600 V, 370 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package TAB • • • • • • 2 3 1 DPAK D(2, TAB) Order code VDS @ TJmax RDS(on)max. ID PTOT STD11N60DM2 650 V 420 mΩ 10 A 110 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications • G(1) Switching applications Description S(3) NG1D2TS3Z This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status STD11N60DM2 Product summary Order code STD11N60DM2 Marking 11N60DM2 Package DPAK Packing Tape and reel DS11674 - Rev 2 - November 2019 For further information contact your local STMicroelectronics sales office. www.st.com STD11N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at Tcase = 25 °C 10 Drain current (continuous) at Tcase = 100 °C 6.3 IDM (1) Drain current (pulsed) 40 A PTOT Total power dissipation at Tcase = 25 °C 110 W dv/dt(2) Peak diode recovery voltage slope 50 dv/dt(3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature range VGS ID Tj Parameter Operating junction temperature range A V/ns -55 to 150 °C Value Unit 1. Pulse width is limited by safe operating area. 2. ISD ≤ 10 A, di/dt=900 A/μs; VDS peak < V(BR)DSS,VDD = 400 V 3. VDS ≤ 480 V. Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 1.14 Rthj-pcb (1) Thermal resistance junction-pcb 50 °C/W 1. When mounted on 1 inch² FR-4 board, 2oz Cu. Table 3. Avalanche characteristics Symbol IAR (1) EAS (2) Parameter Value Unit Avalanche current, repetitive or not repetitive 2.5 A Single pulse avalanche energy 250 mJ 1. pulse width limited by Tjmax 2. starting Tj = 25 °C, ID = IAR, VDD = 50 V. DS11674 - Rev 2 page 2/16 STD11N60DM2 Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Static Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions VGS = 0 V, ID = 1 mA Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1.5 IDSS Zero gate voltage drain current VGS = 0 V, VDS = 600 V, Tcase = 125 °C(1) 100 IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±5 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 5 A 370 420 mΩ Min. Typ. Max. Unit - 614 - - 32 - - 1.08 - 3 µA 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V Reverse transfer capacitance (1) pF Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 57 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 6.2 - Ω Qg Total gate charge - 16.5 - Qgs Gate-source charge - 3.8 - Qgd Gate-drain charge - 9.2 - Coss eq. VDD = 480 V, ID = 10 A, VGS = 0 to 10 V (see Figure 14. Test circuit for gate charge behavior) nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS11674 - Rev 2 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) Min. Typ. Max. - 11.7 - - 6.3 - - 31 - - 9.5 - Unit ns page 3/16 STD11N60DM2 Electrical characteristics Table 7. Source-drain diode Symbol ISD (1) ISDM (2) VSD (3) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 10 A Source-drain current (pulsed) - 40 A - 1.6 V VGS = 0 V, ISD = 10 A Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 10 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 15. Test circuit for inductive load switching and diode recovery times) ISD = 10 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 15. Test circuit for inductive load switching and diode recovery times ) - 90 ns - 248 nC - 5.5 A - 160 ns - 664 nC - 8.3 A Min. Typ. Max. Unit ±30 - - V 1. Limited by maximum junction temperature. 2. Pulse width is limited by safe operating area. 3. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. Table 8. Gate-source Zener diode Symbol V(BR)GSO Parameter Test conditions Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. DS11674 - Rev 2 page 4/16 STD11N60DM2 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area ID (A) GIPG270516FQ6F01DSOA Operation in this area is limited by max. R DS(on) GC20460 K t p = 10µs 101 100 t p = 100µs t p = 1ms 100 10-1 10-1 T j ≤ 150 °C Tc =25°C single pulse 0 10 101 102 t p = 10ms 103 V DS (V) Figure 3. Output characteristics ID (A) 10-1 10-2 10-5 12 12 8 8 6V 4 8 12 16 4 V DS (V) Figure 5. Gate charge vs gate-source voltage GIPG270516FQ6F01FQVG V DS V GS (V) (V) V DD = 480V I D = 10 A 12 DS11674 - Rev 2 600 V DS 10 400 6 300 4 200 2 100 0 0 2 3 4 5 6 7 8 9 V GS (V) Figure 6. Static drain-source on-resistance R DS(on) (mΩ) GIPG270516FQ6F01FRID V GS = 10 V 390 500 8 0 V DS = 20 V 16 7V 0 tp (s) 10-1 GIPG270516FQ6F01FTCH 20 4 10-2 ID (A) GIPG270516FQ6F01FOCH V GS = 8, 9, 10 V 16 10-3 Figure 4. Transfer characteristics 20 0 10-4 4 8 12 16 0 Qg (nC) 380 370 360 350 0 2 4 6 8 10 I D (A) page 5/16 STD11N60DM2 Electrical characteristics (curves) Figure 7. Capacitance variations C (pF) GIPG270516FQ6F01FCVR C iss 103 Figure 8. Normalized gate threshold voltage vs temperature V GS(th) (norm.) GIPG270516FQ6F01FVTH I D = 250 μ A 1.1 1.0 102 C oss 0.9 f = 1 MHz 101 C rss 0.8 100 0.7 10-1 10-1 100 101 102 V DS (V) Figure 9. Normalized on-resistance vs temperature R DS(on) (norm.) GIPG270516FQ6F01FRON VGS =10 V 2.2 0.6 -75 1.00 1.0 0.96 0.6 0.92 75 125 T J (°C) Figure 11. Output capacitance stored energy Eoss (µJ ) GIPG270516FQ6F01FEOS 4 3 125 T J (°C) GIPG270516FQ6F01FBDV I D = 1 mA 1.08 1.4 25 75 V (BR)DSS (norm.) 1.04 -25 25 Figure 10. Normalized V(BR)DSS vs temperature 1.8 0.2 -75 -25 0.88 -75 -25 25 75 125 T J (°C) Figure 12. Source-drain diode forward characteristics V SD (V) GIPG270516FQ6F01FSDF 1.1 T J = - 50 °C 1.0 T J = 25 °C 0.9 T J = 150 °C 0.8 2 0.7 1 0.6 0 DS11674 - Rev 2 0 100 200 300 400 500 600 VDS (V) 0.5 0 2 4 6 8 10 I SD (A) page 6/16 STD11N60DM2 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 16. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS11674 - Rev 2 page 7/16 STD11N60DM2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DS11674 - Rev 2 page 8/16 STD11N60DM2 DPAK (TO-252) type A2 package information 4.1 DPAK (TO-252) type A2 package information Figure 19. DPAK (TO-252) type A2 package outline 0068772_type-A2_rev26 DS11674 - Rev 2 page 9/16 STD11N60DM2 DPAK (TO-252) type A2 package information Table 9. DPAK (TO-252) type A2 mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS11674 - Rev 2 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 10/16 STD11N60DM2 DPAK (TO-252) type A2 package information Figure 20. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_26 DS11674 - Rev 2 page 11/16 STD11N60DM2 DPAK (TO-252) packing information 4.2 DPAK (TO-252) packing information Figure 21. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS11674 - Rev 2 page 12/16 STD11N60DM2 DPAK (TO-252) packing information Figure 22. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 10. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS11674 - Rev 2 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 13/16 STD11N60DM2 Revision history Table 11. Document revision history Date Revision 17-Jun-2016 1 Changes First release. Modified Table 1. Absolute maximum ratings and Table 4. Static. 04-Nov-2019 2 Updated Section 4.1 DPAK (TO-252) type A2 package information. Minor text changes. DS11674 - Rev 2 page 14/16 STD11N60DM2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 DS11674 - Rev 2 page 15/16 STD11N60DM2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS11674 - Rev 2 page 16/16