STD12N60DM6

STD12N60DM6 Datasheet N-channel 600 V, 345 mΩ typ., 10 A MDmesh DM6 Power MOSFET in a DPAK package Features TAB 2 3 1 DPAK D(2, TAB) Order code VDS RDS(on) max. ID STD12N60DM6 600 V 390 mΩ 10 A • • Fast-recovery body diode Lower RDS(on) per area vs previous generation • • • • Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected G(1) Applications • S(3) Switching applications AM01476v1_tab Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STD12N60DM6 Product summary Order code STD12N60DM6 Marking 12N60DM6 Package DPAK Packing Tape and reel DS13509 - Rev 1 - October 2020 For further information contact your local STMicroelectronics sales office. www.st.com STD12N60DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at TC = 25 °C 10 Drain current (continuous) at TC = 100 °C 6.3 IDM (1) Drain current (pulsed) 28 A PTOT Total power dissipation at TC = 25 °C 90 W IAR (2) Avalanche current, repetitive or not repetitive 3 A Single pulse avalanche energy 195 mJ dv/dt (4) Peak diode recovery voltage slope 100 V/ns di/dt(4) Peak diode recovery current slope 1000 A/µs MOSFET dv/dt ruggedness 100 V/ns VGS ID EAS dv/dt (3) (5) Tstg TJ Parameter Storage temperature range Operating junction temperature range -55 to 150 A °C °C 1. Pulse width is limited by safe operating area. 2. Pulse width limited by TJ max. 3. Starting TJ = 25 °C, ID = IAR, VDD = 50 V. 4. ISD ≤ 10 A, VDS (peak) < V(BR)DSS, VDD = 400 V. 5. VDS ≤ 480 V. Table 2. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 1.39 °C/W Rthj-pcb(1) Thermal resistance junction-pcb 50 °C/W 1. When mounted on an 1-inch² FR-4, 2 Oz copper board. DS13509 - Rev 1 page 2/15 STD12N60DM6 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 3. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 1 mA Typ. 600 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 5 A VGS = 0 V, VDS = 600 V, TC = 125 °C Unit V VGS = 0 V, VDS = 600 V IDSS Max. 1 (1) 100 µA ±5 µA 4 4.75 V 345 390 mΩ Min. Typ. Max. Unit - 508 - pF - 28 - pF - 4.7 - pF 3.25 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Test conditions VGS = 100 V, f = 1 MHz, VGS = 0 V Reverse transfer capacitance (1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 100 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 5.8 - Ω Qg Total gate charge - 17 - nC Qgs Gate-source charge - 3.8 - nC Qgd Gate-drain charge - 9.3 - nC Coss eq. VDD = 480 V, ID = 10 A, VGS = 0 to 10 V (see Figure 14. Test circuit for gate charge behavior) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 5. Switching times Symbol td(on) tr td(off) tf DS13509 - Rev 1 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 300 V, ID = 5 A, - 11 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 4.3 - ns Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 26 - ns - 7.3 - ns Fall time page 3/15 STD12N60DM6 Electrical characteristics Table 6. Source-drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 10 A ISDM(1) Source-drain current (pulsed) - 28 A VSD(2) Forward on voltage VGS = 0 V, ISD = 10 A - 1.6 V trr Reverse recovery time ISD = 10 A, di/dt = 100 A/µs, - 80 ns Qrr Reverse recovery charge VDD = 60 V - 0.288 µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 7.2 A trr Reverse recovery time ISD = 10 A, di/dt = 100 A/µs, - 148 ns Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C - 0.680 µC IRRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 9.2 A IRRM 1. Pulse width is limited by safe operating area. 2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DS13509 - Rev 1 page 4/15 STD12N60DM6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Maximum transient thermal impedance Figure 1. Safe operating area ID (A) ZthJ-C (°C/W) GADG061020201245SOA IDM duty=0.5 0.4 0.3 re n) tp =10µs DS (o O is per lim ati ite on d in by th R is a 10 1 10 0 a tp =1µs GADG061020201246ZTH 10 0 10 -1 10 -1 10 0 tp =100µs 0.2 10 -1 0.1 RDS(on) max. 0.05 tp =1ms Single pulse, TC = 25 °C, TJ ≤ 150 °C, VGS = 10 V 10 1 10 -2 tp =10ms V(BR)DSS VDS (V) 10 2 RthJ-C = 1.39 °C/W duty = ton / T Single pulse ton 10 -3 10 -6 T 10 -5 10 -4 10 -3 10 -2 10 -1 tp (s) Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics ID (A) ID (A) GADG081020201037OCH 28 28 VGS = 9, 10 V 24 8V 16 7V 8 12 8 4 6V 0 0 4 8 12 16 VDS (V) Figure 5. Typical gate charge characteristics VGS (V) GADG061020201249QVG VDS VDD = 480 V, ID = 10 A 12 (V) 600 Qg 10 VGS Qgd Qgs 300 4 2 100 6 0 0 2 4 6 8 10 VGS (V) Figure 6. Typical drain-source on-resistance RDS(on) (mΩ) GADG061020201250RID 370 VGS = 10 V 360 350 200 VDS 3 4 500 400 6 DS13509 - Rev 1 20 16 12 0 0 VDS = 19 V 24 20 8 GADG081020201037TCH 9 12 15 18 0 Qg (nC) 340 330 0 2 4 6 8 10 ID (A) page 5/15 STD12N60DM6 Electrical characteristics (curves) Figure 7. Typical capacitance characteristics C (pF) Figure 8. Typical output capacitance stored energy EOSS (µJ) GADG061020201250CVR GADG061020201256EOS 5 10 3 Ciss 10 2 10 1 10 0 10 -1 4 3 Coss 2 Crss 1 VDS (V) 0 0 f = 1 MHz 10 0 10 1 10 2 Figure 9. Normalized gate threshold vs temperature VGS(th) (norm.) GADG061020201252VTH 1.1 0.9 1.5 0.8 1.0 0.7 0.5 75 125 TJ (°C) Figure 11. Normalized breakdown voltage vs temperature V(BR)DSS (norm.) GADG061020201254BDV 500 600 VDS (V) GADG061020201251RON 0.0 -75 VGS = 10 V -25 25 75 125 TJ (°C) Figure 12. Typical reverse diode forward characteristics VSD (V) GADG061020201255SDF 1.1 1.10 1.05 400 RDS(on) (norm.) 2.0 25 300 2.5 ID = 250 µA -25 200 Figure 10. Normalized on-resistance vs temperature 1.0 0.6 -75 100 TJ = -50 °C 1.0 ID = 1 mA 0.9 TJ = 25 °C 1.00 0.8 0.95 0.90 0.85 -75 DS13509 - Rev 1 TJ = 150 °C 0.7 0.6 -25 25 75 125 TJ (°C) 0.5 0 2 4 6 8 10 ISD (A) page 6/15 STD12N60DM6 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD RL RL 2200 + μF 3.3 μF VDD RG VGS IG= CONST VGS VD + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v10 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive load test circuit D G A D.U.T. S 25 Ω A A B B B G RG VD 3.3 µF D + L 100 µH fast diode 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi pulse width _ AM01471v1 AM01470v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD VGS 0 VDS 10% 90% 10% AM01473v1 AM01472v1 DS13509 - Rev 1 page 7/15 STD12N60DM6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 DPAK (TO-252) type A2 package information Figure 19. DPAK (TO-252) type A2 package outline 0068772_type-A2_rev30 DS13509 - Rev 1 page 8/15 STD12N60DM6 DPAK (TO-252) type A2 package information Table 7. DPAK (TO-252) type A2 mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS13509 - Rev 1 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 9/15 STD12N60DM6 DPAK (TO-252) type A2 package information Figure 20. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_30 DS13509 - Rev 1 page 10/15 STD12N60DM6 DPAK (TO-252) packing information 4.2 DPAK (TO-252) packing information Figure 21. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS13509 - Rev 1 page 11/15 STD12N60DM6 DPAK (TO-252) packing information Figure 22. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 8. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS13509 - Rev 1 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 12/15 STD12N60DM6 Revision history Table 9. Document revision history DS13509 - Rev 1 Date Version 09-Oct-2020 1 Changes First release. page 13/15 STD12N60DM6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS13509 - Rev 1 page 14/15 STD12N60DM6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS13509 - Rev 1 page 15/15