STD70NS04ZL

STD70NS04ZL N-channel clamped 9.5 mΩ, 70 A DPAK fully protected SAFeFET™ Power MOSFET Features ■ Type VDSS RDS(on) max ID STD70NS04ZL Clamped < 10.5 mΩ 70 A Low capacitance and gate charge 3 1 ■ 100% avalanche tested ■ 175 °C maximum junction temperature DPAK Applications ■ Switching applications – ABS, solenoid drivers – Motor control – DC-DC converters Figure 1. Internal schematic diagram Description This fully clamped Power MOSFET is produced by using the latest advanced company’s Mesh OVERLAY process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended. Table 1. Device summary Order codes Marking Package Packaging STD70NS04ZL 70NS04ZL DPAK Tape and reel October 2009 Doc ID 16344 Rev 1 1/13 www.st.com 13 Contents STD70NS04ZL Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 Doc ID 16344 Rev 1 STD70NS04ZL 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Drain-source voltage (VGS = 0) VDS VDG drain-gate voltage Unit 33 (1) V (1) V 33 Gate-source voltage VGS Value ±20 (1) V ID Drain current (continuous) at TC = 25 °C 70 A ID Drain current (continuous) at TC=100 °C 50 A IDG Drain gate current (continuous) ± 50 mA IGS Gate-source current (continuous) ± 50 mA IDM (2) Drain current (pulsed) 280 A PTOT Total dissipation at TC = 25 °C 110 W Derating factor 0.73 W/°C VESD(G-S) Gate-source ESD (HBM-C=100 pF, R=1.5 kΩ) ±8 kV VESD(G-D) Gate-drain ESD (HBM-C=100 pF, R=1.5 kΩ) ±8 kV VESD(D-S) Drain-source ESD (HBM-C=100 pF, R=1.5 kΩ) ±8 kV -55 to 175 °C Value Unit Thermal resistance junction-case max 1.36 °C/W Thermal resistance junction-pcb max 50 °C/W TJ Operating junction temperature Storage temperature Tstg 1. Voltage is limited by zener diodes 2. Pulse width limited by safe operating area Table 3. Thermal data Symbol Rthj-case Rthj-pcb (1) Parameter 1. When mounted on 1 inch² 2 oz. FR4 Cu. Table 4. Avalanche data Symbol Parameter Value Unit IAS Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 30 A EAS Single pulse avalanche energy (starting Tj=25 °C, ID=IAS, VDD=21 V) (see Figure 17, Figure 18) 650 mJ Doc ID 16344 Rev 1 3/13 Electrical characteristics 2 STD70NS04ZL Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit 41 V V(BR)DG Clamped voltage ID = 1 mA, VGS = 0 -40 < Tj < 175 °C VDSR(CL) Drain-source clamping voltage (DC) IGD(CL) = -2 mA, ID = 1 A IDSS Zero gate voltage drain current (VGS = 0) VDS = 16 V VDS = 16 V, Tj = 150 °C VDS = 16 V, Tj = 175 °C 1 50 100 µA µA µA IGSS (1) Gate-body leakage current (VDS = 0) VGS = ±10 V VGS = ±10 V,Tj = 175 °C VGS = ±15 V,Tj = 175 °C 2 50 150 µA µA µA VGSS Gate-source breakdown voltage IGS = ±100 µA 15 VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA 1 RDS(on) Static drain-source on resistance VGS = 5 V, ID = 30 A VGS = 10 V, ID = 30 A 33 40 V V 3 V 9.5 12.5 mΩ 7.5 10.5 mΩ 1. Gate Oxide, without zener diodes, tested at wafer sorting (IGSS < ± 100nA @ ± 20V Tj=25°) (see Figure 17) for electrical schematics Table 6. Symbol Dynamic Parameter Test conditions Typ. Max. Unit gfs (1) Forward transconductance VDS =15 V, ID = 30 A - 50 - S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 - 1800 625 220 - pF pF pF tr(Voff) tf tc Off voltage rise time Fall time Cross-over time VCLAMP= 32 V, ID=60 A, VGS=10 V, RG=4.7 Ω (see Figure 16) - 70 95 185 - ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=32 V, ID = 60 A VGS =5 V (see Figure 15) - 32 12 17 - nC nC nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/13 Min. Doc ID 16344 Rev 1 STD70NS04ZL Electrical characteristics Table 7. Symbol Source drain diode Parameter Test conditions ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD=60 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=60 A, di/dt = 100 A/µs, VDD= 25 V, Tj=150 °C (see Figure 16) ISD trr Qrr IRRM Min. Max. Unit - 70 280 A A - 1.5 V - Typ. 40 40 2.3 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 16344 Rev 1 5/13 Electrical characteristics STD70NS04ZL 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM05480v1 O Li per m at ite io d ni by n m this ax a R rea is ID (A) D S( on ) 100 10 100µs 1ms Tj=175°C Tc=25°C 10ms Sinlge pulse 1 0.1 Figure 4. 10 1 VDS(V) Output characteristics AM05481v1 ID (A) VGS=10V 250 AM05482v1 ID (A) VDS=10 V 250 200 6V 150 200 150 5V 100 100 4V 50 0 0 Figure 6. 1 2 3 4 0 0 VDS(V) Normalized BVDSS vs temperature AM05483v1 BVDSS (norm) 50 Figure 7. 2 4 8 6 VGS(V) Static drain-source on resistance AM05484v1 RDS(on) (mΩ) 1.05 10.5 1.00 9.5 VGS=5V TC=25°C 0.95 8.5 ID = 1 mA 0.90 7.5 0.85 -75 6.5 0 VGS=10V 6/13 -25 25 75 125 TJ(°C) Doc ID 16344 Rev 1 10 20 30 40 50 60 ID(A) STD70NS04ZL Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM05485v1 VGS (V) VDD=32V 10 ID=60A Capacitance variations AM05486v1 C (pF) 3500 3000 8 2500 6 2000 Ciss 1500 4 1000 2 Coss 500 0 0 10 20 40 30 50 0 0 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM05487v1 VGS(th) (norm) 1.15 5 10 15 20 25 Crss 30 VDS(V) Figure 11. Normalized on resistance vs temperature RDS(on) (norm) 1.8 AM05488v1 1.6 1.05 1.4 0.95 1.2 0.85 1.0 0.75 0.8 0.65 0.6 0.55 -50 -25 0 25 50 75 100125 150 TJ(°C) 0.4 -50 -25 0 25 50 75 100 125150 TJ(°C) Figure 12. Source-drain diode forward characteristics AM05489v1 VSD (V) TJ=-55°C 1.0 0.9 TJ=25°C 0.8 0.7 TJ=175°C 0.6 0.5 0.4 0 10 20 30 40 50 60 ISD(A) Doc ID 16344 Rev 1 7/13 Test circuits 3 STD70NS04ZL Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 Doc ID 16344 Rev 1 10% AM01473v1 STD70NS04ZL 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 16344 Rev 1 9/13 Package mechanical data STD70NS04ZL TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 A1 0.90 2.40 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G 10/13 Doc ID 16344 Rev 1 STD70NS04ZL 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm MIN. inch MAX. MIN. 1.5 C 12.8 D 20.2 G 16.4 N 50 A0 6.8 7 0.267 0.275 10.4 10.6 0.409 0.417 D 1.5 D1 1.5 E 1.65 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 15.7 0.059 13.2 0.504 0.520 18.4 0.645 0.724 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 K0 W MAX. 12.992 MAX. B0 B1 MIN. 330 T TAPE MECHANICAL DATA inch MAX. 1.574 16.3 0.618 0.641 Doc ID 16344 Rev 1 11/13 Revision history 6 STD70NS04ZL Revision history Table 8. 12/13 Document revision history Date Revision 01-Oct-2009 1 Changes First release Doc ID 16344 Rev 1 STD70NS04ZL Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 16344 Rev 1 13/13